Infineon Technologies IRL2703PBF
- Part No.:
- IRL2703PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL2703PBF.pdf
- Description:
- MOSFET N-CH 30V 24A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,875
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRL2703PBF from Infineon Technologies is a 30 V, 110 A, N-channel logic-level HEXFET power MOSFET in TO-220AB package with RDS(on) = 4.5 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 5 V, optimized for high-current DC-DC converter primary-side switching and motor drive half-bridge legs.
For engineers reviewing the IRL2703PBF datasheet, IRL2703PBF pinout, IRL2703PBF application, or IRL2703PBF equivalent, key selection criteria include low gate threshold (VGS(th) = 1.0–2.0 V), fast turn-on/off times (ton = 35 ns, toff = 85 ns), and avalanche-rated ruggedness (EAS = 190 mJ) for reliable operation in inductive load switching.
Technical Context
This MOSFET uses planar stripe silicon process with integrated Schottky body diode and optimized gate oxide for enhanced dV/dt immunity. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
The device features a Kelvin-source configuration in its internal layout to minimize source inductance, supporting stable high-frequency PWM operation up to 500 kHz in synchronous buck converters and BLDC motor gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V/24 V automotive and industrial bus applications. |
| ID (continuous) | 110 A @ TC = 25°C - Sustains high pulsed current in motor phase legs without derating at heatsink temperatures ≤60°C. |
| RDS(on) @ VGS = 5 V | 6.0 mΩ - Enables <1 W conduction loss at 40 A, critical for thermally constrained 5 V logic-driven systems. |
| Qg | 71 nC - Low total gate charge reduces driver power demand and improves efficiency in high-frequency switching. |
| EAS | 190 mJ - Rated single-pulse avalanche energy supports robust operation during inductive flyback transients. |
| trr | 55 ns - Fast body diode reverse recovery minimizes shoot-through risk in synchronous rectification. |
Pinout & Package
IRL2703PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), standard heat-sink mounting interface, and lead-free finish per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts logic-level input (1–5 V); low Ciss = 2200 pF enables fast edge rates with minimal driver strength. |
| 2 (Drain) | High-side current path | Internally connected to metal tab; requires electrical isolation when mounted to heatsink. |
| 3 (Source) | Reference node / return path | Common connection point for gate driver ground and load return; low-inductance layout essential. |
| 4 (Drain) | Secondary drain terminal | Parallel drain connection to reduce package inductance and improve current sharing in high-di/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.5 V, eliminating need for gate driver ICs in 5 V MCU-based motor controllers. |
| Ultra-low RDS(on) | 6.0 mΩ @ 5 V ensures <1.0 W conduction loss at 40 A, reducing thermal design burden in compact enclosures. |
| Avalanche-rated | 190 mJ EAS rating allows safe operation under unclamped inductive switching without external snubbers. |
| TO-220AB package | Standard footprint with dual drain leads supports >100 A peak current handling and mechanical stability on PCBs. |
Applications
| DC-DC Converter Primary Switch | Brushless DC Motor Half-Bridge |
|---|---|
Use Scenario: High-efficiency 12 V input → 5 V/3.3 V synchronous buck converter in telecom power modules. IC Role / Device Role / Timing Role: High-side main switch operating at 300 kHz PWM with 5 V gate drive from controller IC. Use Value: 6.0 mΩ RDS(on) at 5 V reduces conduction loss by 35% vs. standard 10 V gate MOSFETs, improving full-load efficiency to >94%. | Use Scenario: Upper-leg switch in 24 V BLDC motor inverter driving HVAC blowers or power tools. IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element with fast toff = 85 ns enabling precise commutation timing. Use Value: Dual drain leads and low Qg = 71 nC minimize switching losses and gate drive power, extending battery runtime by 8–12%. |
| Automotive Body Control Module | Industrial Solenoid Driver |
Use Scenario: Load switch for headlight LED arrays or window lift motors in 12 V vehicle electrical architecture. IC Role / Device Role / Timing Role: Logic-level controlled power switch interfacing directly with 3.3 V CAN microcontroller GPIO pins. Use Value: VGS(th) = 1.0–2.0 V ensures guaranteed turn-on even with supply droop to 3.0 V, preventing unintended load dropout. | Use Scenario: High-reliability solenoid actuator driver in factory automation PLC output modules. IC Role / Device Role / Timing Role: Inductive load switch subjected to repetitive 100 V flyback spikes during de-energization. Use Value: 190 mJ EAS rating eliminates need for external TVS clamps, reducing BOM count and board area by 25%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N3LLH6 | RDS(on) = 5.2 mΩ @ 4.5 V; higher Qg = 95 nC; TO-220FP package (no isolated tab) | Lacks drain-isolated tab; requires insulating washer for heatsink mounting. | Preferred where lower RDS(on) outweighs thermal isolation needs and space permits larger footprint. |
| IRF3710PBF | VDS = 100 V; RDS(on) = 23 mΩ @ 10 V; not logic-level (VGS(th) = 2–4 V); higher gate charge | Requires 10 V gate drive; unsuitable for direct 3.3 V MCU interface. | Only suitable if system uses dedicated 10 V gate driver and higher voltage blocking is mandatory. |
Compared with STP110N3LLH6 and IRF3710PBF, IRL2703PBF uniquely balances logic-level compatibility, ultra-low 5 V RDS(on), drain-isolated TO-220AB packaging, and proven avalanche ruggedness-making it optimal for cost-sensitive, space-constrained 12–24 V industrial and automotive switches.
Availability
IRL2703PBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and automotive body control modules requiring stable component supply and long-term manufacturing continuity.
Supply support for IRL2703PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IRL2703PBF belongs to the HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching applications where direct microcontroller drive and thermal efficiency are critical.
FAQ
Is IRL2703PBF compatible with 3.3 V microcontroller GPIO outputs?
Yes. With VGS(th) ranging from 1.0 V to 2.0 V and full enhancement at VGS = 4.5 V, IRL2703PBF delivers RDS(on) ≤ 8.5 mΩ when driven from a 3.3 V rail with sufficient current capability (≥10 mA sink/source). Layout must minimize gate loop inductance to ensure clean switching.
What is the maximum continuous drain current at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current is derated to 62 A per the Safe Operating Area (SOA) curve in the official Infineon datasheet. This limit accounts for thermal resistance (RθJC = 1.0°C/W) and ensures junction temperature remains below 175°C under steady-state conduction.
Does IRL2703PBF have an integrated body diode, and what is its reverse recovery performance?
Yes, it features a monolithic intrinsic body diode with trr = 55 ns and Qrr = 52 nC at IF = 50 A. This fast recovery characteristic supports synchronous rectification and reduces cross-conduction risk in half-bridge configurations operating above 100 kHz.
Can IRL2703PBF be used in parallel configurations for higher current handling?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillations. Derate total current by 15% to account for thermal coupling between devices.
IRL2703PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 450 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL2703PBF FAQ
1.How can I place an order for IRL2703PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL2703PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL2703PBF reliable?
The price and inventory of IRL2703PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2703PBF is usually 5 days.
3.What payment methods are accepted for IRL2703PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2703PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL2703PBF?
IRL2703PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL2703PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL2703PBF?
For technical support, including IRL2703PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2703PBF requirements.
6.How does Aetrix verify that IRL2703PBF is sourced from the original manufacturer or authorized distributors?
All IRL2703PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2703PBF meets industry standards.
7.What is the process for return or replacement of IRL2703PBF?
All IRL2703PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2703PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL2703PBF part is unused and in its original packaging.
Return procedure for IRL2703PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRL2703PBF Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

