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Infineon Technologies IRL2910PBF
- Part No.:
- IRL2910PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL2910PBF.pdf
- Description:
- MOSFET N-CH 100V 55A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,000
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Product details
Overview
IRL2910PBF from Infineon Technologies is a 100 V, 74 A, 15 mΩ (at VGS = 10 V) N-channel HEXFET power MOSFET in TO-220AB package, designed for high-current DC-DC conversion, motor drive half-bridges, and industrial switching loads. It features logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on), and avalanche-rated ruggedness.
For engineers reviewing the IRL2910PBF datasheet, IRL2910PBF pinout, IRL2910PBF application, or IRL2910PBF equivalent, key selection criteria include on-resistance at 4.5 V gate drive, single-pulse avalanche energy rating (EAS = 380 mJ), thermal resistance (RθJC = 1.0 °C/W), and TO-220AB lead-frame construction for heatsink mounting.
Technical Context
This MOSFET uses planar stripe silicon technology with optimized cell pitch to achieve low conduction loss while maintaining fast switching transitions (trise = 30 ns, tfall = 35 ns at ID = 50 A). Its gate charge (Qg = 105 nC at VGS = 10 V) supports efficient PWM operation in hard-switched topologies.
The device integrates an intrinsic body diode with reverse recovery time (trr = 110 ns) and Qrr = 120 nC, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin. |
| RDS(on) @ VGS = 10 V | 15 mΩ - Enables ≤1.1 W conduction loss at 74 A continuous drain current. |
| RDS(on) @ VGS = 4.5 V | 22 mΩ - Supports direct microcontroller GPIO drive without level-shifting circuitry. |
| ID (continuous) | 74 A @ TC = 25 °C - Rated for sustained current delivery with external heatsink. |
| EAS | 380 mJ - Withstands single-pulse inductive energy spikes in relay or solenoid switching. |
| RθJC | 1.0 °C/W - Allows junction temperature rise of only 74 °C above case at full load (74 A × 0.022 Ω × 1.0 °C/W). |
Pinout & Package
IRL2910PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 175 °C maximum junction temperature and compatible with standard TO-220 heatsinks using M3 screws.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives logic-level or PWM signal; requires <105 nC total charge for full enhancement. |
| 2 (Drain) | High-side power terminal | Connected to power rail or inductive load; electrically tied to metal tab for thermal path. |
| 3 (Source) | Reference node / return path | Serves as common reference for gate drive and current sensing; ties to ground or low-side switch. |
| 4 (Drain) | Secondary high-side power terminal | Parallel drain connection to Pin 2-reduces package inductance and improves current sharing in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.0–2.0 V enables direct drive from 3.3 V or 5 V microcontrollers without gate driver ICs. |
| Low gate charge | Qg = 105 nC minimizes driver power loss and allows >100 kHz switching in SMPS designs. |
| Avalanche-rated | Rated for repetitive and single-pulse avalanche operation up to EAS = 380 mJ per pulse. |
| Lead-free construction | "PBF" suffix indicates RoHS-compliant, Pb-free plating and solderable terminations per JEDEC J-STD-020. |
Applications
| Industrial Motor Drive | Server DC-DC Converter |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller driving 500 W fans or pumps. IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk during PWM commutation. Use Value: 22 mΩ RDS(on) at 4.5 V ensures <0.5 W conduction loss at 15 A RMS, reducing heatsink size by 35% vs. legacy MOSFETs. |
Use Scenario: Synchronous rectifier in 12 V input → 3.3 V/50 A output buck converter for CPU VRM. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency at light-to-full load. Use Value: Body diode Qrr = 120 nC and low VF reduce reverse recovery loss, increasing full-load efficiency by 1.8% over diode-based design. |
| Telecom Power Supply | Automotive Body Control Module |
Use Scenario: Hot-swap OR-ing FET in redundant 48 V telecom rectifier system with inrush limiting. IC Role / Device Role / Timing Role: High-side pass transistor controlled via dedicated hot-swap controller for fault-isolated power insertion. Use Value: 100 V VDS withstands 48 V bus transients up to 80 V, eliminating need for external clamping components. |
Use Scenario: Load switch for 12 V headlight or HVAC blower control in ISO 16750-compliant BCM. IC Role / Device Role / Timing Role: Protected high-current switch with integrated avalanche energy handling for inductive kickback suppression. Use Value: EAS = 380 mJ absorbs ≥10× the energy of typical 12 V automotive inductive loads without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | RDS(on) = 12.5 mΩ @ 10 V but VGS(th) = 2.0–4.0 V; higher gate charge (140 nC); TO-220FP package (no isolated tab). | Requires gate driver for reliable 3.3 V logic interface; unsuitable for direct MCU drive in space-constrained layouts. | Select when lower RDS(on) is critical and gate drive voltage ≥5 V is available. |
| IRF3205PBF | RDS(on) = 8.0 mΩ @ 10 V but VGS(th) = 2.0–4.0 V; no 4.5 V RDS(on) spec; lower EAS (250 mJ). | Not logic-level compatible; inadequate avalanche robustness for solenoid or relay switching. | Prefer only in fixed 10 V gate drive systems where lowest conduction loss dominates reliability requirements. |
Compared with STP75NF75 and IRF3205PBF, IRL2910PBF uniquely balances logic-level drivability, 4.5 V RDS(on) performance, and high single-pulse avalanche energy-making it optimal for embedded systems with mixed-voltage control and unclamped inductive loads.
Availability
IRL2910PBF is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and telecom power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRL2910PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRL2910PBF belongs to Infineon's HEXFET logic-level MOSFET product line, engineered for high-efficiency, low-voltage gate drive in battery-powered and embedded power conversion systems.
FAQ
What is the maximum continuous drain current for IRL2910PBF at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is derated to 44 A, based on its 74 A rating at 25 °C and thermal resistance RθJC = 1.0 °C/W. This reflects safe operation under sustained high-temperature conditions with adequate heatsinking.
Does IRL2910PBF have a built-in ESD protection diode on the gate?
No-IRL2910PBF does not integrate gate ESD protection. Its gate oxide is rated for ±20 V maximum VGS; external Zener clamping (e.g., 12 V TVS) is recommended in noisy environments or manual handling scenarios to prevent gate oxide rupture.
Can IRL2910PBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. Parallel operation requires matched gate drive layout, identical source inductance, and individual gate resistors (≥10 Ω) to suppress oscillation during switching transitions.
Is the metal tab of IRL2910PBF electrically isolated from other pins?
No-the metal tab is internally connected to Pin 2 (Drain) and Pin 4 (Drain), forming a single high-current, low-inductance drain node. Electrical isolation requires insulating hardware (e.g., shoulder washers) when mounting to grounded heatsinks.
IRL2910PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL2910PBF FAQ
1.How can I place an order for IRL2910PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL2910PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL2910PBF reliable?
The price and inventory of IRL2910PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2910PBF is usually 5 days.
3.What payment methods are accepted for IRL2910PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2910PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL2910PBF?
IRL2910PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL2910PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL2910PBF?
For technical support, including IRL2910PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2910PBF requirements.
6.How does Aetrix verify that IRL2910PBF is sourced from the original manufacturer or authorized distributors?
All IRL2910PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2910PBF meets industry standards.
7.What is the process for return or replacement of IRL2910PBF?
All IRL2910PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2910PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL2910PBF part is unused and in its original packaging.
Return procedure for IRL2910PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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