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Infineon Technologies IRL2910STRL

Part No.:
IRL2910STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL2910STRL.pdf
Description:
MOSFET N-CH 100V 55A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,958

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Product details

Overview

IRL2910STRL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D2PAK (TO-262) package, rated for 100V VDSS, 55A continuous drain current at TC = 25°C, and ultra-low 0.026Ω RDS(on) at VGS = 10V. It features fast switching (tr = 100ns), full avalanche rating (EAS = 520mJ), and surface-mount capability for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL2910STRL datasheet, IRL2910STRL pinout, IRL2910STRL application, or IRL2910STRL equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0V), thermal resistance (RθJC = 0.75°C/W), body diode recovery (trr = 240–350ns), and avalanche ruggedness for inductive load switching.

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining robust dv/dt immunity (5.0 V/ns) and fast turn-on/turn-off dynamics (td(on) = 11ns, tf = 55ns). Its low gate charge (Qg = 140nC) and Miller charge (Qgd = 81nC) support efficient high-frequency PWM operation up to several hundred kHz.

The integrated source inductance (LS = 7.5nH) and optimized die layout reduce parasitic ringing during hard-switching. The device's fully rated avalanche capability enables reliable unclamped inductive switching without external snubbers in motor control and solenoid drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100 V - Withstands 100V drain-source blocking voltage before avalanche onset
RDS(on) @ VGS = 10V0.026 Ω - Enables ≤1.5W conduction loss at 55A, critical for thermally constrained PCBs
ID @ TC = 25°C55 A - Maximum continuous current with case temperature maintained at 25°C
EAS520 mJ - Single-pulse avalanche energy rating ensures reliability under inductive fault conditions
Qg140 nC - Total gate charge determines driver strength requirement for <100ns switching transitions
tr/tf100/55 ns - Fast rise/fall times enable high-efficiency operation in 100–500 kHz SMPS designs
RθJC0.75 °C/W - Low junction-to-case thermal resistance supports direct heatsink mounting in high-power applications

Pinout & Package

D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (Drain, Source, Gate) with Drain connected to tab.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main power output terminal / heat sink interfaceElectrically and thermally connected to PCB copper pour or heatsink; carries full load current
SourceReference node for gate drive and current sensingLow-inductance return path; used for shunt-based current monitoring and gate reference
GateControl input for channel conductionLogic-compatible (VGS(th) ≤ 2.0V); requires <140nC charge for full enhancement

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with 5V microcontroller GPIO, eliminating level-shifting circuitry
Fully avalanche-ratedWithstands 520mJ single-pulse energy without failure-critical for relay/motor coil demagnetization
Ultra-low RDS(on)0.026Ω at 10V reduces I²R losses by >30% vs. comparable 100V MOSFETs, improving efficiency in 12–48V systems
Fast body diode recoverytrr = 240ns enables synchronous rectification in buck converters without excessive shoot-through risk
Lead-free & RoHS-compliantMeets IPC/JEDEC J-STD-020 reflow profile; compatible with standard SMT assembly processes

Applications

Brushless DC Motor ControlIndustrial DC-DC Converters

Use Scenario: Half-bridge phase-leg switching in 24–48V BLDC inverters driving HVAC blowers or pump motors.

IC Role / Device Role / Timing Role: High-side and low-side power switch; handles 55A peak phase current with <100ns dead-time control.

Use Value: Low RDS(on) minimizes conduction loss at high duty cycles; avalanche rating absorbs back-EMF spikes during commutation.

Use Scenario: Primary-side switch in isolated 400W forward or LLC resonant converters for factory automation PLCs.

IC Role / Device Role / Timing Role: Main power switch operating at 200–300 kHz with synchronous rectification on secondary side.

Use Value: 140nC Qg enables efficient gate driving with low-power ICs; 0.75°C/W RθJC allows direct heatsink mounting without thermal vias.

Automotive Body Control ModulesHigh-Current Solid-State Relays

Use Scenario: Load switching for headlights, cooling fans, and seat actuators in 12V/24V vehicle architectures.

IC Role / Device Role / Timing Role: Logic-driven high-side switch with integrated diagnostics via source-sense pin (external resistor).

Use Value: VGS(th) of 1.0–2.0V ensures turn-on with automotive MCU outputs; 175°C TJ(max) supports under-hood placement.

Use Scenario: Replacement for electromechanical relays in industrial control panels handling 30–50A resistive/inductive loads.

IC Role / Device Role / Timing Role: Bidirectional switching element with body diode conducting reverse current during AC zero-crossing.

Use Value: 520mJ EAS prevents failure during inductive turn-off transients; D2PAK footprint simplifies mechanical mounting and thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF3205PbFRDS(on) = 0.008Ω @ 10V (lower), but VGS(th) = 2.0–4.0V (not logic-level)Requires 10V gate drive; unsuitable for 3.3V/5V MCU direct driveSelect only if higher gate voltage is available and lower RDS(on) justifies added drive complexity
STP55NF06LRDS(on) = 0.018Ω @ 10V, Qg = 85nC (lower), but EAS = 320mJ (reduced)Lower switching loss but reduced avalanche margin for inductive loadsPreferable in high-frequency SMPS where avalanche stress is minimal; avoid in motor drives with high L×di/dt

Compared with IRF3205PbF and STP55NF06L, IRL2910STRL uniquely balances logic-level compatibility, high avalanche energy, and low thermal resistance-making it optimal for space-constrained, inductive-load applications requiring robustness without gate-driver overhead.

Availability

IRL2910STRL is available at Aetrix Electronics and suitable for brushless DC motor control, industrial DC-DC converters, and high-current solid-state relays requiring stable component supply across extended production lifecycles.

Supply support for IRL2910STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices.

The IRL2910STRL belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial and automotive power systems where reliability under transient stress is critical.

FAQ

Is IRL2910STRL suitable for 3.3V microcontroller gate drive?

Yes. With a gate threshold voltage (VGS(th)) of 1.0–2.0V and full enhancement achievable at VGS = 4.0V (RDS(on) = 0.040Ω), the device operates reliably with 3.3V logic outputs. However, for lowest RDS(on) (0.026Ω), a 5V or 10V gate drive is recommended to ensure minimal conduction loss.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID = 39A at TC = 100°C and VGS = 10V. This derating reflects thermal limits-not electrical limits-and assumes adequate heatsinking. At ambient temperatures above 70°C, PCB copper area and airflow must be validated per AN-994 footprint guidelines.

Does IRL2910STRL have a built-in ESD protection diode on the gate?

No. The device does not integrate gate ESD protection. External Zener clamping (e.g., 12V TVS between gate and source) is strongly recommended in systems exposed to handling or board-level ESD events, especially given its ±16V absolute maximum VGS rating.

Can IRL2910STRL replace IRL2910L in a design?

Yes-electrically identical-but the IRL2910STRL uses surface-mount D2PAK packaging while IRL2910L is through-hole TO-262. Mechanical redesign is required for pad layout and thermal relief. The SMD version offers lower profile and better automated assembly compatibility, but requires careful reflow profiling due to its large thermal mass.

IRL2910STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
3700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL2910STRL FAQ

1.How can I place an order for IRL2910STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2910STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2910STRL reliable?

The price and inventory of IRL2910STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2910STRL is usually 5 days.

3.What payment methods are accepted for IRL2910STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2910STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2910STRL?

IRL2910STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2910STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2910STRL?

For technical support, including IRL2910STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2910STRL requirements.

6.How does Aetrix verify that IRL2910STRL is sourced from the original manufacturer or authorized distributors?

All IRL2910STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2910STRL meets industry standards.

7.What is the process for return or replacement of IRL2910STRL?

All IRL2910STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRL2910STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2910STRL part is unused and in its original packaging.

Return procedure for IRL2910STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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