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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2910STRRPBF

Name: IRL2910STRRPBF
Brand: Infineon Technologies
SKU: IRL2910STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2910STRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2910STRRPBF.pdf

Description:: MOSFET N-CH 100V 55A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL2910STRRPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in D2PAK (TO-262) package, rated for 100V V_DSS, 55A continuous drain current at T_C = 25°C, and ultra-low 26 mΩ R_DS(on) at V_GS = 10V. It features fully avalanche-rated ruggedness, fast switching (t_r = 100 ns, t_f = 55 ns), and optimized gate charge (Q_g = 140 nC) for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the IRL2910STRRPBF datasheet, IRL2910STRRPBF pinout, IRL2910STRRPBF application, or IRL2910STRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), thermal resistance (R_θJC = 0.75 °C/W), body diode performance (t_rr = 240–350 ns), and surface-mount power handling up to 200 W at T_C = 25°C.

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to achieve low on-resistance per die area while maintaining robust unclamped inductive switching capability (E_AS = 520 mJ). Its gate threshold voltage enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The D2PAK package provides low thermal resistance and high-current interconnect integrity, supporting high di/dt operation (≤490 A/µs) and peak pulsed drain current of 190 A. The integrated body diode exhibits controlled reverse recovery (Q_rr = 1.8–2.7 µC) and dv/dt immunity up to 5.0 V/ns - critical for synchronous rectification and H-bridge motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 2× safety margin.
R_DS(on) @ V_GS = 10 V	0.026 Ω - Enables ≤1.5 W conduction loss at 25 A, reducing heatsink requirements in high-current SMPS.
I_D Continuous @ T_C = 25°C	55 A - Sustained current capability when mounted on thermally optimized PCB; defines maximum steady-state load.
Q_g	140 nC - Total gate charge determines driver strength needed; compatible with standard gate drivers (e.g., IR2110, UCC27531).
t_r/t_f	100 ns / 55 ns - Fast edge rates minimize switching losses in hard-switched topologies operating up to 200 kHz.
E_AS	520 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients without external snubbers.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance enables precise thermal modeling for clamp-mount or solder-down thermal interface design.

Pinout & Package

The IRL2910STRRPBF is housed in a surface-mount D2PAK (TO-262) package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the large copper tab on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-level input (1.0–2.0 V threshold); requires <140 nC charge for full enhancement; sensitive to ESD.
D (Drain)	High-side power terminal	Connected to internal die backside and exposed copper tab; must be thermally and electrically tied to PCB ground plane or heatsink.
S (Source)	Reference node / return path	Common reference for gate drive and load current; forms source node for synchronous rectifier or low-side switch configuration.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4.0 V gate voltage (R_DS(on) = 40 mΩ), enabling direct MCU GPIO control without buffer stages.
Fully avalanche rated	Guaranteed single-pulse avalanche survival up to 520 mJ - eliminates need for external clamping in inductive load switching.
Ultra-low R_DS(on)	26 mΩ at 10 V drive reduces I²R losses by >35% vs. legacy 40 mΩ devices at same current, improving efficiency in 12–48 V systems.
Fast body diode	Reverse recovery time (t_rr) = 240 ns typical enables use in synchronous rectification without significant shoot-through risk.
Lead-free construction	RoHS-compliant D2PAK package with matte tin lead finish; qualified per J-STD-020 moisture sensitivity level 1 (MSL-1).

Applications

DC-DC Converters

Motor Control Drivers

Use Scenario: High-current buck converter in telecom power supply delivering 50 A at 12 V output from 48 V input.

IC Role / Device Role: Primary low-side synchronous rectifier MOSFET, replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >95% efficiency at full load due to 26 mΩ R_DS(on) and fast body diode recovery (t_rr < 350 ns), minimizing heat generation and eliminating forced-air cooling.

Use Scenario: Half-bridge leg in 24 V BLDC motor controller for industrial automation.

IC Role / Device Role: Low-side switch in three-phase inverter stage, driven by isolated gate driver.

Use Value: Withstands repetitive avalanche events during commutation faults (E_AR = 20 mJ) and supports 190 A pulsed current for torque surge handling.

Power ORing Circuits

Hot-Swap Controllers

Use Scenario: Redundant 28 V DC power distribution in avionics rack with automatic fault isolation.

IC Role / Device Role: Back-to-back configured MOSFET for bidirectional ORing with reverse polarity protection.

Use Value: Low 26 mΩ on-resistance minimizes voltage drop (<300 mV at 12 A), preserving system voltage margin while enabling compact layout.

Use Scenario: Inrush current limiter in enterprise server PSU hot-swap module.

IC Role / Device Role: Main pass element controlling ramp-up of capacitive load during board insertion.

Use Value: Logic-level gate allows simple RC-based soft-start control; 55 A continuous rating supports ≥40 A sustained load with derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	V_DSS = 60 V, R_DS(on) = 0.018 Ω @ 10 V, TO-220 package	Limited to ≤60 V systems; lacks 100 V margin for 48 V transient surges	Select only if bus voltage remains strictly ≤45 V and through-hole mounting is preferred.
IRF1405PBF	V_DSS = 55 V, R_DS(on) = 0.0055 Ω @ 10 V, TO-220	Lower voltage rating and non-logic-level gate (V_GS(th) = 2.0–4.0 V); higher drive voltage required	Not suitable for 3.3 V logic interfaces; requires gate driver for reliable turn-on below 5 V.

Compared with STP55NF06L and IRF1405PBF, the IRL2910STRRPBF uniquely combines 100 V rating, logic-level gate, and D2PAK thermal performance - making it the only option among the three capable of safe, efficient operation in 48 V automotive and industrial DC systems with direct microcontroller drive.

Availability

IRL2910STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control drivers, power ORing circuits, and hot-swap controllers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL2910STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The IRL2910STRRPBF belongs to the HEXFET® logic-level Power MOSFET product line, engineered for high-efficiency, high-reliability switching in 12–48 V industrial, telecom, and motor control applications where low gate drive voltage and rugged transient handling are essential.

FAQ

Is IRL2910STRRPBF pin-compatible with IRL2910L?

Yes - both share identical D2PAK (IRL2910STRRPBF) and TO-262 (IRL2910L) pinouts: Gate, Drain, Source in that order. However, IRL2910L is through-hole, while IRL2910STRRPBF is surface-mount with exposed drain pad requiring thermal via design. Mechanical mounting and PCB footprint differ significantly.

What is the maximum recommended gate resistor for switching at 100 kHz?

A gate resistor of 1.4 Ω is specified in the datasheet for switching characterization (t_d(off), t_f). For 100 kHz operation, a 2.2–4.7 Ω resistor balances switching loss reduction and EMI control. Lower values increase peak gate current (I_G(peak) ≈ 140 nC × 100 kHz = 14 mA avg), requiring driver capable of ±2 A peak.

Can IRL2910STRRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized curve shows monotonic rise with junction temperature) enables inherent current sharing. Use matched gate resistors (±1%), symmetrical PCB layout, and shared thermal plane. Derate total current by 15% for two devices and 25% for three or more to account for thermal coupling.

Does the body diode support continuous reverse conduction in synchronous rectification?

No - the body diode is rated for pulsed source current (I_SM = 190 A) and continuous source current (I_S) not specified. In synchronous rectification, it conducts only during dead-time; sustained reverse bias must be avoided. Use external Schottky or SiC diode for freewheeling paths requiring continuous conduction.

IRL2910STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 26mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2910STRRPBF FAQ

1.How can I place an order for IRL2910STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2910STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2910STRRPBF reliable?

The price and inventory of IRL2910STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2910STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL2910STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2910STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2910STRRPBF?

IRL2910STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2910STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2910STRRPBF?

For technical support, including IRL2910STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2910STRRPBF requirements.

6.How does Aetrix verify that IRL2910STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL2910STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2910STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL2910STRRPBF?

All IRL2910STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2910STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2910STRRPBF part is unused and in its original packaging.

Return procedure for IRL2910STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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