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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3102STRLPBF

Name: IRL3102STRLPBF
Brand: Infineon Technologies
SKU: IRL3102STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3102STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3102STRLPBF.pdf

Description:: MOSFET N-CH 20V 61A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,621

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Product details

Overview

IRL3102STRLPBF from Infineon Technologies (formerly International Rectifier) is a 20V, 110A, 3.3mΩ N-channel HEXFET® Power MOSFET in TO-263 (D²PAK) package, optimized for high-efficiency DC-DC conversion and synchronous rectification in server VRMs and POL converters. It features logic-level gate drive (V_GS(th) = 1.0–2.0V), low Q_g (45nC), and enhanced body diode ruggedness.

For engineers reviewing the IRL3102STRLPBF datasheet, IRL3102STRLPBF pinout, IRL3102STRLPBF application, or IRL3102STRLPBF equivalent, key selection criteria include R_DS(on) at 4.5V, SOA under repetitive avalanche, body diode reverse recovery charge (Q_rr = 120nC), and thermal resistance (R_θJC = 0.7°C/W).

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve low on-resistance with fast switching performance. Its gate threshold voltage enables direct drive from 3.3V or 5V controllers without level-shifting, and its reduced Q_gd/Q_gs ratio improves hard-switching EMI behavior.

The device integrates an optimized body diode with controlled reverse recovery (t_rr = 55ns, Q_rr = 120nC) for synchronous buck operation. Its SOA supports 110A continuous drain current at T_C = 25°C and 70A at T_C = 100°C with pulse testing per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20V - Maximum blocking voltage for 12V input rail systems with margin
R_DS(on) @ V_GS = 4.5V	3.3mΩ - Enables <1W conduction loss at 50A in 12V→1V POL stage
I_D (continuous)	110A @ T_C = 25°C - Supports high-current single-phase VRM designs
Q_g	45nC - Reduces gate driver power loss and enables >1MHz switching
Q_rr	120nC - Low reverse recovery charge minimizes shoot-through risk in sync-buck
R_θJC	0.7°C/W - Enables high-power density thermal design with minimal heatsink

Pinout & Package

TO-263 (D²PAK) surface-mount package with exposed drain pad for low-inductance, high-current PCB layout and thermal transfer to copper plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Logic-level control input; requires <2.0V to turn on fully
Pin 2 (D)	Drain	High-current output node; electrically connected to exposed metal tab
Pin 3 (S)	Source	Power ground reference; ties to source of synchronous FET or controller ground

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	3.3mΩ enables >95% efficiency in 12V→1.2V/60A buck converter
Enhanced body diode ruggedness	Rated for 100% I_D repetitive avalanche energy (E_AS = 120mJ)
Lead-free and RoHS-compliant	"PBF" suffix confirms Pb-free plating and halogen-free molding compound
Optimized for synchronous rectification	Low Q_rr/Q_g ratio reduces cross-conduction losses in high-frequency buck stages

Applications

Server Voltage Regulator Module (VRM)

Point-of-Load (POL) Converter

Use Scenario: High-current CPU core power delivery in dual-socket x86 servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter.

Use Value: 3.3mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 5mΩ devices at 80A, reducing thermal load on VRM heatsink.

Use Scenario: 48V-to-12V intermediate bus converter feeding downstream POLs.

IC Role / Device Role / Timing Role: Primary-side switching FET in active-clamp forward topology.

Use Value: 45nC Q_g allows clean 500kHz switching with standard gate drivers, improving power density over 30nC+ alternatives.

Industrial Motor Drive Inverter

Telecom DC-DC Brick

Use Scenario: Low-voltage (<24V) BLDC motor phase leg in servo drives.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter half-bridge.

Use Value: Body diode t_rr = 55ns prevents voltage spikes during commutation, eliminating need for external Schottky catch diodes.

Use Scenario: 48V input telecom rectifier module delivering 12V/30A output.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter.

Use Value: 0.7°C/W R_θJC enables full-load operation at 70°C ambient without forced airflow, meeting NEBS Level 3 requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3103PBF	R_DS(on) = 2.8mΩ @ 4.5V; higher Q_g (52nC); same TO-263 package	Better conduction loss but slower switching; suited for <300kHz designs	Select when minimizing I²R loss dominates over switching loss
SiR872DP-T1-GE3	R_DS(on) = 3.0mΩ @ 4.5V; lower Q_rr (85nC); PowerPAK® 8x8 package	Smaller footprint, superior thermal performance (R_θJC = 0.5°C/W), but requires different PCB layout	Select when board space and thermal headroom are constrained

Compared with IRL3102STRLPBF, IRL3103PBF trades higher gate charge for lower on-resistance, while SiR872DP-T1-GE3 delivers better thermal metrics and faster body diode recovery in a smaller footprint-both require layout or drive circuit review before substitution.

Availability

IRL3102STRLPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC-DC bricks requiring stable component supply and long-term production continuity.

Supply support for IRL3102STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL3102STRLPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-current, high-efficiency DC-DC conversion in datacenter and industrial power systems.

FAQ

Is IRL3102STRLPBF suitable for 3.3V gate drive?

Yes. With V_GS(th) specified from 1.0V to 2.0V and R_DS(on) fully characterized at 4.5V and 10V, it achieves <5mΩ on-resistance using standard 3.3V logic outputs. Gate charge (Q_g = 45nC) ensures reliable turn-on with typical microcontroller GPIO drivers.

What is the maximum pulsed drain current rating?

The absolute maximum pulsed drain current (I_DM) is 440A, tested per JEDEC JESD24-1 with pulse width ≤10μs and duty cycle ≤1%. This rating applies only under strict thermal boundary conditions and must be validated against SOA curves in the datasheet for specific PCB layout and heatsinking.

Does it have avalanche energy rating?

Yes. The device is rated for repetitive avalanche energy (E_AS) of 120mJ at T_J = 25°C, verified per JEDEC JESD24-1. This enables robust operation in inductive switching circuits where transient overvoltage may occur during turn-off.

Can it replace IRL3102PBF in existing designs?

Yes. IRL3102STRLPBF is the tape-and-reel version of IRL3102PBF, sharing identical electrical specifications, thermal characteristics, and TO-263 package dimensions. The "STR" denotes tape-and-reel packaging; no layout or schematic changes are required for drop-in replacement.

IRL3102STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 37A, 7V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3102STRLPBF FAQ

1.How can I place an order for IRL3102STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3102STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3102STRLPBF reliable?

The price and inventory of IRL3102STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3102STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL3102STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3102STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3102STRLPBF?

IRL3102STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3102STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3102STRLPBF?

For technical support, including IRL3102STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3102STRLPBF requirements.

6.How does Aetrix verify that IRL3102STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL3102STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3102STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL3102STRLPBF?

All IRL3102STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3102STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3102STRLPBF part is unused and in its original packaging.

Return procedure for IRL3102STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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