Infineon Technologies IRL3103LPBF

Overview

IRL3103LPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 30V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V, and 64 A continuous drain current at T_C = 25°C. It delivers high-efficiency switching in DC-DC converters, motor drivers, and hot-swap circuits where low gate drive voltage and rugged avalanche capability are required.

For engineers reviewing the IRL3103LPBF datasheet, IRL3103LPBF pinout, IRL3103LPBF application, or IRL3103LPBF equivalent, key selection criteria include its 4.5 V gate threshold, 175°C max junction temperature, fully avalanche-rated operation, and thermal resistance of 1.6°C/W (junction-to-case), critical for high-current, thermally constrained power stage designs.

Technical Context

This device employs advanced planar HEXFET processing to achieve ultra-low on-resistance per die area while maintaining fast switching (t_d(on) = 8.9 ns, t_f = 9.1 ns) and robust unclamped inductive switching performance (E_AS = 1320 mJ). Its logic-level gate enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The integrated body diode features low forward voltage (V_SD = 1.2 V at I_S = 34 A) and controlled reverse recovery (Q_rr = 110–170 nC, t_rr = 57–86 ns), supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by validated junction-to-case resistance and SOA curves up to 100 µs pulse width.

Key Specifications

Pinout & Package

IRL3103LPBF uses the TO-262 (I²PAK) through-hole package - a low-profile variant of the D2Pak optimized for space-constrained PCB layouts while retaining high thermal and current-carrying capability. The package features isolated tab (drain-connected) and standard 3-pin footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3103LPBF, IRL3803PBF offers superior conduction efficiency at the cost of larger size and drive complexity, while STP36NF06L trades off avalanche ruggedness and current capability for broader voltage headroom-making IRL3103LPBF optimal for compact, high-reliability 30 V logic-driven power switches.

Availability

IRL3103LPBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and hot-swap applications requiring stable component supply, long-term manufacturability, and RoHS-compliant lead-free assembly.

Supply support for IRL3103LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

The IRL3103LPBF belongs to the logic-level HEXFET® Power MOSFET product line, engineered for high-efficiency, low-voltage switching in space- and thermally-constrained applications such as portable power tools, telecom power systems, and industrial automation outputs.

FAQ

What is the maximum safe operating voltage for IRL3103LPBF in continuous DC operation?

The absolute maximum drain-to-source voltage (V_DS) is 30 V, with no derating required up to this value at T_J ≤ 175°C. Operation above 30 V risks irreversible breakdown, even momentarily. Designers must ensure transient overvoltage clamping (e.g., TVS diodes) if inductive loads exceed this rating.

Can IRL3103LPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, and it achieves full enhancement (R_DS(on) ≤ 16 mΩ) at V_GS = 4.5 V. A 3.3 V GPIO can switch moderate loads (<5 A) with acceptable R_DS(on); for 30+ A loads, a dedicated gate driver is recommended to ensure fast turn-on and minimize switching loss.

Is the metal tab of the TO-262 package electrically connected, and to which terminal?

Yes - the exposed metal tab is internally connected to the Drain (D) terminal. This provides both a low-inductance current path and a primary thermal conduction route to the heatsink or PCB copper plane. Electrical isolation from other circuit nodes is mandatory unless the drain node is at system ground potential.

Does IRL3103LPBF require a gate resistor, and what value is recommended for 100 kHz PWM?

A gate resistor is essential to damp ringing and control slew rate. For 100 kHz PWM with moderate load current (≤20 A), a 10 Ω series resistor between driver and gate balances switching speed (t_f/t_r ~20–30 ns) and EMI. Values below 5 Ω risk excessive gate current (>3 A peak); above 22 Ω increases switching loss significantly.