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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3103PBF

Name: IRL3103PBF
Brand: Infineon Technologies
SKU: IRL3103PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3103PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3103PBF.pdf

Description:: MOSFET N-CH 30V 64A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,954

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Product details

Overview

IRL3103PBF from Infineon Technologies (formerly International Rectifier) is a 30V, 64A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 12 mΩ R_DS(on) at V_GS = 10 V, fully avalanche-rated, and lead-free. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters, motor drives, and power supplies operating up to 175°C junction temperature.

For engineers reviewing the IRL3103PBF datasheet, IRL3103PBF pinout, IRL3103PBF application, or IRL3103PBF equivalent, key selection criteria include its 12 mΩ on-resistance at 10 V gate drive, 220 A pulsed drain current capability, 1320 mJ single-pulse avalanche energy rating, and validated thermal resistance of 1.6°C/W junction-to-case - critical for high-reliability industrial power switching designs.

Technical Context

This HEXFET® device uses advanced silicon processing to achieve ultra-low conduction loss while maintaining robust avalanche ruggedness and fast switching (t_r = 120 ns, t_f = 9.1 ns). Its gate threshold voltage (1.0–2.7 V) enables 4.5 V logic-level drive compatibility, and the integrated body diode supports freewheeling in buck and half-bridge topologies.

The MOSFET's dynamic parameters - including Q_g = 33 nC, Q_gd = 17 nC, and C_iss = 1650 pF - are optimized for high-frequency operation with minimal Miller effect. Thermal design is supported by verified R_θJC = 1.6°C/W and R_θCS = 0.50°C/W (greased flat sink), enabling stable 94 W continuous dissipation at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche onset; defines safe operation in 24 V bus systems.
R_DS(on)	12 mΩ @ V_GS = 10 V - Enables ≤0.77 W conduction loss at 64 A DC, reducing heatsink requirements.
I_D (T_C = 25°C)	64 A - Continuous drain current rating under ideal heatsinking; derates linearly at 0.63 W/°C above 25°C case temp.
E_AS	1320 mJ - Single-pulse avalanche energy; allows reliable operation during inductive turn-off transients without external snubbers.
Q_g	33 nC - Total gate charge determines driver strength requirement; compatible with standard 1 A peak gate drivers.
t_r/t_f	120 ns / 9.1 ns - Fast switching edges minimize switching losses in 100–500 kHz SMPS designs.
R_θJC	1.6°C/W - Verified junction-to-case thermal resistance; enables direct mounting to heatsinks with predictable thermal modeling.

Pinout & Package

Package: TO-220AB - Industry-standard through-hole power package with isolated tab (drain-connected), rated for ≤50 W commercial-industrial use, low-cost assembly, and mechanical mounting via M3/6-32 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤16 V absolute max; threshold range 1.0–2.7 V enables 4.5 V logic compatibility.
2 (Drain)	High-side current path	Internally connected to metal tab; electrically tied to pin 4; must be insulated from heatsink unless referenced to system ground.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; low-inductance layout critical for EMI control.
4 (Drain)	Secondary drain connection	Redundant drain terminal for enhanced current handling and thermal spreading; shares same potential as pin 2.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	12 mΩ at 10 V gate drive reduces conduction loss by >30% vs. legacy 30 V MOSFETs in 48 V input DC-DC stages.
Logic-level gate drive	Guaranteed turn-on at V_GS ≥ 4.5 V supports direct interface with microcontrollers and PWM controllers without level-shifting.
Full avalanche rating	Rated for 34 A repetitive avalanche current and 1320 mJ single-pulse energy - eliminates need for external clamping in inductive loads.
Lead-free construction	RoHS-compliant "PbF" suffix confirms exemption-free lead-free plating and solderability per J-STD-020 moisture sensitivity level 1.
TO-220AB thermal performance	1.6°C/W R_θJC and 0.50°C/W R_θCS (greased) enable 94 W continuous operation with standard extruded aluminum heatsinks.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: Low-voltage BLDC motor control in industrial actuators with 24 V supply and 30 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; commutated at 20 kHz with dead-time control.

Use Value: 12 mΩ R_DS(on) limits conduction loss to <0.9 W at 30 A, enabling compact heatsinkless design in IP65 enclosures.

Use Scenario: Secondary-side synchronous rectification in 48 V–12 V isolated buck converter delivering 60 A output.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: Reduces forward drop from ~0.5 V (Schottky) to <0.05 V, improving efficiency by 1.8% at full load and lowering secondary-side thermal density.

Hot-Swap OR-ing FET

Industrial Power Sequencer

Use Scenario: Redundant 24 V power rail OR-ing in programmable logic controller backplane with inrush limiting.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET acting as ideal diode; controlled by dedicated hot-swap controller.

Use Value: 12 mΩ on-resistance yields <0.75 V drop at 60 A, minimizing voltage sag during failover and eliminating reverse recovery losses.

Use Scenario: Controlled power-up sequencing of FPGA, memory, and analog subsystems in test equipment with 3.3 V/1.2 V/1.8 V rails.

IC Role / Device Role / Timing Role: High-current enable switch placed between bulk input and downstream LDOs/DC-DCs; triggered by sequencer IC.

Use Value: 220 A pulsed drain rating handles 100 ms inrush surges from large bulk capacitors without SOA violation or thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8 mΩ @ 10 V, but V_DSS = 55 V and higher Q_g = 71 nC	Better for 48 V systems; slower switching increases loss in >100 kHz designs	Select when higher voltage margin is needed and gate drive strength permits higher Q_g.
STP30NF20	V_DSS = 200 V, R_DS(on) = 40 mΩ @ 10 V, lower I_D = 30 A	Designed for flyback snubber and AC-DC PFC; unsuitable for high-current 24 V loads	Choose only if 200 V blocking is mandatory and current demand is ≤25 A.

Compared with IRF3205PBF and STP30NF20, the IRL3103PBF delivers optimal balance of low on-resistance, logic-level drive, and avalanche ruggedness specifically for 24–30 V industrial power switching - offering superior efficiency at high frequency and lower gate drive complexity than higher-voltage alternatives.

Availability

IRL3103PBF is available at Aetrix Electronics and suitable for motor drives, DC-DC synchronous rectifiers, and industrial hot-swap OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IRL3103PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with vertical integration from silicon fabrication to system-level validation.

The IRL3103PBF belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion where low conduction loss, fast switching, and rugged transient tolerance are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL3103PBF supports 45 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures junction temperature remains within the −55°C to +175°C operational range under sustained load conditions with appropriate heatsinking.

Is the IRL3103PBF suitable for use with 3.3 V microcontroller GPIOs?

No - while the gate threshold voltage starts at 1.0 V, full enhancement requires ≥4.5 V for guaranteed 64 A conduction. At 3.3 V, R_DS(on) rises significantly (>50 mΩ), increasing conduction loss and risk of thermal runaway. A gate driver or level shifter is required for robust 3.3 V control.

Does the TO-220AB package have an electrically isolated tab?

No - the metal tab in the TO-220AB package is internally connected to the drain (pins 2 and 4). Electrical isolation from the heatsink requires a mica or polymer insulator kit plus shoulder washers, or use of a non-conductive thermal pad with verified dielectric strength ≥500 V RMS.

What is the typical reverse recovery time of the body diode?

The body diode exhibits t_rr = 57 ns (typical) at T_J = 25°C, I_F = 34 A, and di/dt = 100 A/µs. This fast recovery minimizes switching loss and voltage overshoot during freewheeling in synchronous buck converters, especially when paired with complementary high-side switches.

IRL3103PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 64A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1650 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3103PBF FAQ

1.How can I place an order for IRL3103PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3103PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3103PBF reliable?

The price and inventory of IRL3103PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3103PBF is usually 5 days.

3.What payment methods are accepted for IRL3103PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3103PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3103PBF?

IRL3103PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3103PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3103PBF?

For technical support, including IRL3103PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3103PBF requirements.

6.How does Aetrix verify that IRL3103PBF is sourced from the original manufacturer or authorized distributors?

All IRL3103PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3103PBF meets industry standards.

7.What is the process for return or replacement of IRL3103PBF?

All IRL3103PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3103PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3103PBF part is unused and in its original packaging.

Return procedure for IRL3103PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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