Infineon Technologies IRL3103S

Overview

IRL3103S from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak surface-mount package, rated for 30V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V, and 64 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 120 ns), and 175°C maximum junction temperature - used in high-current DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRL3103S datasheet, IRL3103S pinout, IRL3103S application, or IRL3103S equivalent, key selection criteria include its low 4.5 V gate threshold (V_GS(th) = 1.0–2.7 V), 33 nC total gate charge, 1.2 V body diode forward voltage at 34 A, and validated thermal resistance of 1.6 °C/W junction-to-case - critical for thermally constrained PCB-mounted power stages.

Technical Context

This MOSFET employs advanced planar HEXFET processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) up to 10 ms at 30 V. Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) and low Crss (110 pF) support clean, high-di/dt switching in synchronous rectification and PWM-controlled loads.

The device integrates a co-packaged, optimized body diode with t_rr = 57–86 ns and Q_rr = 110–170 nC under 100 A/µs di/dt - enabling efficient unclamped inductive switching in H-bridge motor control without external snubbers.

Key Specifications

Pinout & Package

D2Pak (TO-263) surface-mount package: single-row 3-pin outline with exposed drain pad (pin 2) for thermal and electrical connection; 10 mm × 14.9 mm footprint; 4.7 mm height; RoHS-compliant lead-free finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP36NF3LL and IRF3708PbF, the IRL3103S offers optimal balance of low R_DS(on), moderate Q_g, and surface-mount D2Pak thermal performance - making it preferred for high-current, medium-frequency industrial power stages where PCB real estate and thermal management are tightly coupled.

Availability

IRL3103S is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and automated test equipment requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL3103S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRL3103S belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage DC power conversion where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL3103S supports 45 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be verified against actual PCB copper area and airflow conditions.

Is the IRL3103S suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range (1.0–2.7 V) and guaranteed R_DS(on) of ≤16 mΩ at V_GS = 4.5 V ensure reliable enhancement with 3.3 V logic. However, full 64 A capability requires ≥10 V drive; for 3.3 V systems, design for ≤28 A continuous current.

Does the IRL3103S have a built-in body diode, and what are its recovery characteristics?

Yes - it integrates a monolithic p-n junction body diode with typical V_SD = 1.2 V at 34 A and T_J = 25°C. Reverse recovery time is 57–86 ns, and Q_rr is 110–170 nC under di/dt = 100 A/µs - parameters confirmed in the Electrical Characteristics table and Figure 7.

How does the D2Pak package compare thermally to TO-220 for this device?

The D2Pak (TO-263) offers lower R_θJC (1.6 °C/W) than TO-220 (typically ~2.5 °C/W), and its exposed drain pad enables direct thermal coupling to PCB copper. On a 1" square FR-4 board, R_θJA is 40 °C/W - significantly better than TO-220's ~62 °C/W - making D2Pak superior for high-power surface-mount applications.