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Infineon Technologies IRL3103STRLPBF

Part No.:
IRL3103STRLPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL3103STRLPBF.pdf
Description:
MOSFET N-CH 30V 64A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,445

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Product details

Overview

IRL3103STRLPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel HEXFET® Power MOSFET in D2Pak (TO-263) package, rated for 30V VDS, 12 mΩ RDS(on) at VGS = 10 V, and 64 A continuous drain current at TC = 25°C. It features fully avalanche-rated ruggedness, fast switching (tr = 120 ns), and low gate charge (Qg = 33 nC), enabling high-efficiency DC-DC conversion and motor drive stages.

For engineers reviewing the IRL3103STRLPBF datasheet, IRL3103STRLPBF pinout, IRL3103STRLPBF application, or IRL3103STRLPBF equivalent, key selection criteria include its 30V breakdown voltage, 12 mΩ on-resistance at 10 V gate drive, 175°C maximum junction temperature, avalanche energy rating (EAS = 1320 mJ), and D2Pak thermal performance (RθJC = 1.6 °C/W).

Technical Context

This MOSFET employs advanced planar HEXFET processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its logic-level gate threshold (VGS(th) = 1.0–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The device integrates a fast, low-loss body diode with trr = 57–86 ns and Qrr = 110–170 nC, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor controllers. Thermal design leverages the D2Pak's low RθJC and high power dissipation (94 W at TC = 25°C).

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum blocking voltage in high-side or low-side switch configurations
RDS(on)12 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 30 A, critical for thermally constrained PCBs
ID (cont)64 A @ TC = 25°C - Supports high-current loads such as BLDC motor phases or battery protection FETs
Qg33 nC - Reduces gate driver power demand and switching transition time in 100–500 kHz SMPS
EAS1320 mJ - Withstands single-pulse inductive energy without failure in unclamped switching events
TJ max175°C - Allows operation in sealed enclosures or high-ambient industrial environments
tr/tf120 ns / 9.1 ns - Minimizes switching losses during hard-switched PWM transitions

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for enhanced thermal conduction and mechanical stability. Requires minimum 1"² FR-4 copper pour for RθJA = 40 °C/W operation.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateLogic-level control input; accepts 3.3 V/5 V drive; requires <33 nC charge for full enhancement
Pin 2 (D)DrainHigh-current output node; electrically connected to exposed metal tab for thermal and electrical sinking
Pin 3 (S)SourcePower return path; referenced to gate drive ground; hosts body diode cathode

Key Features

FeatureDesign Value
Logic-level gate driveVGS(th) = 1.0–2.0 V enables direct interface with MCU GPIOs and low-voltage drivers
Ultra-low RDS(on)12 mΩ at 10 V reduces I²R losses by >40% vs. standard 30 V MOSFETs in 48 V bus systems
Full avalanche ratingRated for EAS = 1320 mJ ensures reliability in inductive load switching without external snubbers
Fast body diodetrr = 57 ns and Qrr = 110 nC minimize reverse recovery losses in synchronous rectifiers
D2Pak thermal performanceRθJC = 1.6 °C/W allows >90 W power handling with minimal heatsink in compact designs

Applications

Motor Drive StageDC-DC Synchronous Rectifier

Use Scenario: High-current half-bridge leg in 24 V BLDC motor controller driving 1–3 kW fans or pumps.

IC Role / Device Role / Timing Role: Low-side switching FET with fast turn-off (tf = 9.1 ns) to minimize shoot-through risk and enable 20–50 kHz PWM.

Use Value: 12 mΩ RDS(on) limits conduction loss to ≤1.1 W at 30 A, reducing heatsink size by 35% vs. 20 mΩ alternatives.

Use Scenario: Secondary-side switch in isolated 12 V output buck converter for telecom power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active phase.

Use Value: Qrr = 110 nC and trr = 57 ns reduce reverse recovery loss by 60% versus 45 V Schottky, improving efficiency by 1.2% at full load.

Battery Protection CircuitHot-Swap Controller

Use Scenario: Back-to-back configuration in 24 V Li-ion battery pack protection IC for overcurrent and short-circuit cutoff.

IC Role / Device Role / Timing Role: High-side current-sense FET with fast fault response; avalanche rating absorbs inductive kick during MOSFET turn-off.

Use Value: EAS = 1320 mJ withstands >100 A short-circuit events for ≥10 µs without degradation, meeting UL 2580 requirements.

Use Scenario: Inrush-limiting FET in 48 V server backplane hot-swap module with 100 A peak load.

IC Role / Device Role / Timing Role: Linear-mode controlled pass element during startup; transitions to saturation after soft-start completes.

Use Value: SOA curve supports 48 V × 50 A for 10 ms in linear mode, eliminating need for external current-limiting resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFRDS(on) = 6.0 mΩ (lower), Qg = 42 nC (higher), same 30 V rating and D2Pak packageBetter conduction loss but slower switching; suited for <100 kHz applications where thermal margin dominatesSelect when minimizing I²R loss is primary; verify gate driver can source 42 nC within required ton.
STP30NF20VDS = 200 V (higher), RDS(on) = 36 mΩ (higher), TO-220 package, non-logic-level (VGS(th) = 2–4 V)Higher voltage headroom but higher losses and no direct 3.3 V drive; requires gate driver ICChoose only if system requires >30 V blocking; not drop-in compatible due to package and drive mismatch.

Compared with IRL3103STRLPBF, IRL3803PBF offers lower conduction loss at the cost of higher gate charge and switching loss, while STP30NF20 trades voltage rating and drive simplicity for increased RDS(on) and thermal resistance-making neither a functional replacement without circuit redesign.

Availability

IRL3103STRLPBF is available at Aetrix Electronics and suitable for motor drive stages, DC-DC synchronous rectifiers, and battery protection circuits requiring stable component supply, lead-free compliance, and high-reliability power switching under 30 V.

Supply support for IRL3103STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRL3103 series belongs to Infineon's logic-level HEXFET® portfolio, engineered for high-efficiency, low-voltage power conversion in space-constrained and thermally demanding applications such as server VRMs and portable power tools.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL3103STRLPBF supports 45 A continuous drain current at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be validated against actual board layout and airflow conditions.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dv/dt coupling. The device's 33 nC total gate charge and 17 nC Miller charge make it susceptible to oscillation without proper gate drive impedance control.

Can IRL3103STRLPBF replace IRL3103LPbF in a design?

Yes-IRL3103STRLPBF (D2Pak) and IRL3103LPbF (TO-262) share identical electrical specifications and thermal ratings, differing only in package type and mounting method. PCB footprint, soldering profile, and mechanical retention must be updated to accommodate the surface-mount D2Pak variant.

Is the body diode suitable for reverse recovery in high-frequency operation?

The body diode has trr = 57–86 ns and Qrr = 110–170 nC, making it suitable for synchronous rectification up to 500 kHz in well-designed layouts. However, its reverse recovery characteristics are inferior to dedicated SiC Schottky diodes, so operation above 250 kHz requires careful dead-time optimization and layout minimization of stray inductance.

IRL3103STRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 34A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
1650 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
94W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL3103STRLPBF FAQ

1.How can I place an order for IRL3103STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3103STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3103STRLPBF reliable?

The price and inventory of IRL3103STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3103STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL3103STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3103STRLPBF transactions.

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4.How is shipping managed for IRL3103STRLPBF?

IRL3103STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3103STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3103STRLPBF?

For technical support, including IRL3103STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3103STRLPBF requirements.

6.How does Aetrix verify that IRL3103STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL3103STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3103STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL3103STRLPBF?

All IRL3103STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3103STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3103STRLPBF part is unused and in its original packaging.

Return procedure for IRL3103STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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