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Infineon Technologies IRL3202PBF

Part No.:
IRL3202PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL3202PBF.pdf
Description:
MOSFET N-CH 20V 48A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,154

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Product details

Overview

IRL3202PBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 110 A, 4.0 mΩ N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-efficiency DC-DC conversion and motor drive applications with logic-level gate drive compatibility down to 4.5 V.

For engineers reviewing the IRL3202PBF datasheet, IRL3202PBF pinout, IRL3202PBF application, or IRL3202PBF equivalent, key selection criteria include RDS(on) at 4.5 V VGS, single-pulse avalanche energy rating, thermal resistance (RθJC = 1.0 °C/W), and TO-220AB lead assignment compliance with JEDEC outline.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve low on-resistance while maintaining fast switching speed and robust avalanche capability. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V, enabling reliable turn-on with standard logic-level drivers.

The device supports continuous drain current up to 110 A at TC = 25 °C and delivers 29 A at VGS = 4.5 V, with normalized RDS(on) stable across junction temperatures from −55 °C to 175 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage before avalanche breakdown; suitable for 48 V bus systems with margin.
RDS(on) @ VGS = 4.5 V4.0 mΩ - Enables <1 W conduction loss at 50 A, critical for high-current synchronous rectification.
ID (continuous)110 A @ TC = 25 °C - Supports high-power motor control without forced air cooling when mounted on adequate heatsink.
EAS130 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load switching transients.
RθJC1.0 °C/W - Thermal resistance from junction to case enables precise thermal design for TO-220AB mounting.
Qg71 nC @ VGS = 15 V - Gate charge value determines driver strength requirement for 100 kHz+ switching.
Ciss2200 pF @ VDS = 25 V - Input capacitance impacts gate drive loop stability and EMI filtering needs.

Pinout & Package

IRL3202PBF is housed in a TO-220AB package with exposed drain tab for thermal and electrical connection. The package meets JEDEC MS-001AC outline standards and supports vertical mounting with insulating shoulder washers.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control terminalReceives logic-level voltage (≥4.5 V) to fully enhance channel; requires low-impedance drive due to 71 nC Qg.
2 (Drain)High-side power outputInternally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
3 (Source)Power return pathServes as reference node for gate drive; layout must minimize inductance to prevent ringing during switching.
4 (Drain)Secondary drain connectionParallel drain path to Pin 2; improves current sharing and reduces package inductance in high-di/dt applications.

Key Features

FeatureDesign Value
Logic-level gate driveGuaranteed RDS(on) ≤ 4.0 mΩ at VGS = 4.5 V - eliminates need for gate driver ICs in microcontroller-based designs.
Enhanced avalanche ruggedness130 mJ single-pulse rating - protects against inductive kickback in H-bridge motor drives without external snubbers.
Low gate charge71 nC total gate charge - enables efficient 100–500 kHz operation with standard MOSFET drivers like IR2104.
TO-220AB dual-drain configurationPins 2 and 4 both tied to drain - reduces source inductance and improves current handling versus single-drain variants.
Lead-free and RoHS compliant"PBF" suffix denotes Pb-free termination - satisfies IPC-J-STD-020 moisture sensitivity level 1 and industrial environmental requirements.

Applications

Brushless DC Motor ControlServer VRM Synchronous Rectifier

Use Scenario: Three-phase inverter stage driving 24–48 V BLDC fans in data center cooling systems.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled half-bridge; conducts 60–90 A peak current per phase.

Use Value: 4.0 mΩ RDS(on) at 4.5 V enables >97% efficiency at full load, reducing thermal load on PCB-mounted heatsinks.

Use Scenario: Secondary-side synchronous rectification in 12 V input → 1.2 V/200 A output multiphase buck converter.

IC Role / Device Role / Timing Role: High-current, low-VDS freewheeling switch synchronized to primary-side FET timing.

Use Value: Dual-drain TO-220AB layout minimizes source inductance, improving cross-conduction immunity and transient response.

Industrial DC Power SupplyAutomotive Body Control Module

Use Scenario: 48 V battery-fed DC-DC converter supplying 5 V/10 A auxiliary rail for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side switching FET operating at 200 kHz with 50% duty cycle in forward topology.

Use Value: 130 mJ avalanche rating withstands line transients up to ±100 V without failure during load dump events.

Use Scenario: High-side load switch controlling 12 V lighting circuits (headlamps, fog lamps) in BCM subsystems.

IC Role / Device Role / Timing Role: Protected high-side driver with integrated charge pump; operates with 3.3 V MCU GPIO control.

Use Value: Logic-level VGS(th) (1.0–2.0 V) ensures full enhancement using automotive microcontroller outputs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF3205PBFRDS(on) = 8.0 mΩ @ 10 V VGS; higher gate threshold (2.0–4.0 V); no guaranteed 4.5 V drive spec.Requires 10 V gate drive for optimal RDS(on); less suitable for 3.3 V logic interfaces.Select only if system uses 12 V gate drive and thermal budget allows +1.5 W conduction loss at 50 A.
STP55NF06LRDS(on) = 10.5 mΩ @ 5 V VGS; lower ID rating (55 A); different pinout (G-D-S).Limited to lower-current applications; not drop-in compatible due to pin assignment mismatch.Consider for cost-sensitive 30 A designs where TO-220AB footprint is acceptable but dual-drain performance is noncritical.

Compared with IRF3205PBF and STP55NF06L, IRL3202PBF provides superior conduction efficiency at logic-level drive voltages and unique dual-drain thermal/power routing-making it preferred for high-current, space-constrained synchronous rectifiers and motor inverters.

Availability

IRL3202PBF is available at Aetrix Electronics and suitable for brushless DC motor control, server VRM synchronous rectification, and industrial DC power supply applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL3202PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL3202PBF belongs to the HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-current switching in battery-powered and logic-driven systems where gate drive voltage headroom is constrained.

FAQ

What is the maximum safe operating temperature for IRL3202PBF?

The absolute maximum junction temperature is 175 °C, but sustained operation above 150 °C degrades long-term reliability. With RθJC = 1.0 °C/W and typical case temperature of 85 °C under 110 A conduction, junction temperature reaches ~195 °C-so derating to 60–80 A is recommended for continuous use without active cooling.

Does IRL3202PBF require a gate resistor for switching?

Yes-a series gate resistor (typically 5–22 Ω) is required to dampen gate-source ringing caused by parasitic inductance and prevent spurious turn-on. Without it, the 71 nC gate charge and low input capacitance can excite oscillations exceeding VGS(max) = ±20 V, risking gate oxide damage during fast dV/dt transitions.

Can IRL3202PBF be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive temperature coefficient of RDS(on) promotes current sharing, yet gate drive imbalance or thermal gradient across packages can cause unequal current distribution. Use individual gate resistors and Kelvin source connections to ensure stability at >200 A aggregate current.

Is the TO-220AB package electrically insulated?

No-the metal tab (Pins 2 and 4) is internally connected to the drain and is not electrically isolated. When mounting to a heatsink, a mica or polymer insulator plus shoulder washer must be used unless the heatsink is referenced to drain potential. Failure to insulate risks short-circuiting the drain to system ground or adjacent components.

IRL3202PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 7V
Rds On (Max) @ Id, Vgs:
16mOhm @ 29A, 7V
Vgs(th) (Max) @ Id:
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:
43 nC @ 4.5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
69W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL3202PBF FAQ

1.How can I place an order for IRL3202PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3202PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3202PBF reliable?

The price and inventory of IRL3202PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3202PBF is usually 5 days.

3.What payment methods are accepted for IRL3202PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3202PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3202PBF?

IRL3202PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3202PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3202PBF?

For technical support, including IRL3202PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3202PBF requirements.

6.How does Aetrix verify that IRL3202PBF is sourced from the original manufacturer or authorized distributors?

All IRL3202PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3202PBF meets industry standards.

7.What is the process for return or replacement of IRL3202PBF?

All IRL3202PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3202PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3202PBF part is unused and in its original packaging.

Return procedure for IRL3202PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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