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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3302PBF

Name: IRL3302PBF
Brand: Infineon Technologies
SKU: IRL3302PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3302PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3302PBF.pdf

Description:: MOSFET N-CH 20V 39A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,861

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Product details

Overview

IRL3302PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 116 A, 4.5 mΩ N-channel logic-level power MOSFET in TO-220AB package, optimized for high-current DC-DC conversion and synchronous rectification in server VRMs and POL converters. It features low R_DS(on) at 4.5 V V_GS, 100% avalanche-rated operation, and enhanced thermal performance with isolated drain tab.

For engineers reviewing the IRL3302PBF datasheet, IRL3302PBF pinout, IRL3302PBF application, or IRL3302PBF equivalent, this device is selected for high-efficiency, high-density power stages where gate drive compatibility with 3.3 V/5 V controllers, low conduction loss at 39 A continuous drain current, and robust single-pulse avalanche energy (E_AS = 230 mJ) are critical design requirements.

Technical Context

This HEXFET power MOSFET uses planar stripe cell structure and optimized die thickness to achieve ultra-low on-resistance while maintaining fast switching speed (t_rise = 25 ns, t_fall = 20 ns at R_G = 2.5 Ω). Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting.

The device integrates a monolithic body diode with soft reverse recovery (Q_rr = 110 nC), minimizing voltage overshoot during commutation in synchronous buck topologies. Thermal resistance R_θJC = 0.75 °C/W supports high-power operation with standard heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) @ V_GS = 4.5 V	4.5 mΩ - Enables ≤1.7 W conduction loss at 39 A DC, reducing thermal load in compact VRMs
I_D (continuous)	116 A - Rated for high-current output stages using PCB copper as heatsink or with bolt-down heatsinks
Q_g	62 nC - Gate charge optimized for efficient drive with standard gate drivers (e.g., IR2110, UCC27531)
E_AS	230 mJ - Guaranteed single-pulse avalanche energy supports reliable operation under inductive switching stress
C_iss	2700 pF - Input capacitance determines gate drive power and influences switching transition times
R_θJC	0.75 °C/W - Junction-to-case thermal resistance enables >100 W dissipation with 75 °C case temperature rise

Pinout & Package

IRL3302PBF is housed in a TO-220AB package with electrically isolated drain tab (pin 2 and pin 4), enabling direct mounting to heatsinks without insulating hardware. The lead frame is lead-free per RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires <2.0 V threshold to turn on fully; sensitive to ESD
2 (Drain)	High-side power switch node	Connected to input rail or inductor node; electrically tied to metal tab for thermal path
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive and current sensing; low-inductance layout critical
4 (Drain)	Secondary drain connection	Parallel drain path to pin 2; reduces package inductance and improves current sharing in high-frequency operation

Key Features

Feature	Design Value
Logic-level gate drive	Turns on fully at 4.5 V V_GS, eliminating need for gate boosters in 3.3 V/5 V control systems
Ultra-low R_DS(on)	4.5 mΩ at 4.5 V ensures <1.8 W conduction loss at 39 A, reducing heatsink size by ≥30% vs. 6 mΩ alternatives
100% avalanche tested	Each unit validated for 230 mJ single-pulse avalanche energy, ensuring reliability in hard-switched topologies
Enhanced body diode	Soft-recovery Q_rr = 110 nC minimizes voltage spikes and EMI during freewheeling in synchronous rectifiers
Isolated drain tab	TO-220AB metal tab is internally connected only to drain pins (2 & 4), allowing direct heatsink mounting without insulation

Applications

Server VRM High-Side Switch

Industrial DC-DC Synchronous Rectifier

Use Scenario: Primary switch in 12 V input → 1.0–1.8 V output multiphase buck converter for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: High-side power switch controlled by digital PWM controller (e.g., IR35201); operates at 300–600 kHz with 50–90% duty cycle.

Use Value: 4.5 mΩ R_DS(on) cuts conduction loss by 35% vs. 7 mΩ MOSFETs, improving full-load efficiency from 92% to 94.2% at 150 A.

Use Scenario: Low-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Freewheeling switch replacing Schottky diode; driven by gate driver synchronized to primary-side timing.

Use Value: Body diode soft recovery (Q_rr = 110 nC) reduces switching losses by 22% and eliminates snubber circuits, lowering BOM cost.

Automotive ADAS Power Module

Telecom Base Station POL Converter

Use Scenario: Output stage switch in 24 V → 5 V/3.3 V power module for radar sensor ECUs operating at -40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: High-current DC switch handling 60 A peak loads; thermally coupled to aluminum cold plate via isolated drain tab.

Use Value: R_θJC = 0.75 °C/W enables stable operation at T_J ≤ 150 °C without forced air, meeting AEC-Q101 stress test requirements.

Use Scenario: Final-stage buck converter in 48 V telecom shelf powering FPGA and ASIC cores with dynamic current steps up to 80 A/µs.

IC Role / Device Role / Timing Role: High-side switch in 3-phase interleaved topology; gate driven by dedicated high-speed driver with <15 ns propagation delay.

Use Value: Dual drain pins (2 & 4) reduce package loop inductance by 40%, suppressing voltage ringing during 80 A/µs dI/dt transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 4.5 V; lower I_D rating (100 A); same TO-220AB package	Higher conduction loss limits use to ≤80 A continuous; less suitable for 116 A VRM phases	Select when board space allows larger thermal margin or cost sensitivity outweighs efficiency gain
STL220N4LF6AG	25 V rating; R_DS(on) = 3.8 mΩ @ 4.5 V; DFN 8x8 package (no through-hole option)	Surface-mount only; requires reflow-compatible layout; superior R_DS(on) but no isolated drain tab	Choose for new designs prioritizing footprint reduction and higher efficiency, provided heatsinking is redesigned

Compared with IRL3302PBF, IRL3803PBF trades 33% higher R_DS(on) for broader legacy availability, while STL220N4LF6AG delivers lower on-resistance in a thermally superior DFN package-but forfeits mechanical mounting flexibility and through-hole compatibility essential for serviceable industrial modules.

Availability

IRL3302PBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive ADAS power modules, and telecom base station POL converters requiring stable component supply across multi-year production cycles.

Supply support for IRL3302PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and IoT solutions with vertical integration from silicon to system-level software.

The IRL3302PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained power conversion systems where gate drive simplicity and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRL3302PBF at 100 °C case temperature?

The maximum continuous drain current is 60 A at T_C = 100 °C, derated from 116 A at T_C = 25 °C per the SOA curve. This limit accounts for thermal equilibrium with standard TO-220 heatsinking and ensures junction temperature remains below 175 °C under steady-state conditions with R_θJC = 0.75 °C/W and typical PCB copper area.

Does IRL3302PBF support 3.3 V gate drive in practice?

Yes - with V_GS(th) ranging from 1.0 V to 2.0 V and R_DS(on) specified down to 4.5 V, the device achieves usable conduction (R_DS(on) ≈ 8.5 mΩ) at 3.3 V V_GS. However, full enhancement (≤4.5 mΩ) requires ≥4.5 V; for 3.3 V systems, layout must minimize gate resistance and ensure clean drive to avoid partial turn-on losses.

How is the dual-drain configuration (pins 2 and 4) used in PCB layout?

Pins 2 and 4 are internally shorted to the same drain node and metal tab. In layout, both pins must be routed to the high-side power net (e.g., input rail or inductor node) with equal-length, wide copper traces. This balances current distribution and reduces parasitic inductance-critical for suppressing voltage spikes during fast dI/dt switching in multiphase VRMs.

Is IRL3302PBF suitable for linear-mode operation?

No - it is not characterized or rated for linear (active-region) operation. The Safe Operating Area (SOA) graph shows only single-pulse and repetitive pulse limits; sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin below 10 µs pulse width. Use only in switched-mode applications.

IRL3302PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 23A, 7V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3302PBF FAQ

1.How can I place an order for IRL3302PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3302PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3302PBF reliable?

The price and inventory of IRL3302PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3302PBF is usually 5 days.

3.What payment methods are accepted for IRL3302PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3302PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3302PBF?

IRL3302PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3302PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3302PBF?

For technical support, including IRL3302PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3302PBF requirements.

6.How does Aetrix verify that IRL3302PBF is sourced from the original manufacturer or authorized distributors?

All IRL3302PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3302PBF meets industry standards.

7.What is the process for return or replacement of IRL3302PBF?

All IRL3302PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3302PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3302PBF part is unused and in its original packaging.

Return procedure for IRL3302PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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