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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3303PBF

Name: IRL3303PBF
Brand: Infineon Technologies
SKU: IRL3303PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3303PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3303PBF.pdf

Description:: MOSFET N-CH 30V 38A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:3,865

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Product details

Overview

IRL3303PBF from Infineon Technologies is a 30V, 110A N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current DC-DC conversion and motor control with R_DS(on) = 3.3 mΩ at V_GS = 10 V and low gate charge (Q_g = 80 nC). It operates with logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V) and features integrated body diode with t_rr = 65 ns.

For engineers reviewing the IRL3303PBF datasheet, IRL3303PBF pinout, IRL3303PBF application, or IRL3303PBF equivalent, key selection criteria include on-resistance at 4.5 V gate drive, avalanche ruggedness rating (E_AS = 390 mJ), SOA compliance at 100°C case temperature, and thermal resistance (R_θJC = 0.9°C/W).

Technical Context

This MOSFET employs planar stripe cell structure and optimized doping profile to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate oxide is rated for ±20 V maximum, and the device supports continuous drain current up to 110 A at T_C = 25°C with derating to 70 A at T_C = 100°C.

The integrated body diode exhibits soft recovery characteristics (dv/dt < 5.5 V/ns, di/dt < 200 A/μs) and forward voltage drop of 1.3 V at I_S = 55 A, enabling efficient synchronous rectification in buck converters without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V system bus applications
R_DS(on) @ V_GS = 10 V	3.3 mΩ - Enables ≤1.2 W conduction loss at 60 A continuous drain current
Q_g	80 nC - Determines gate driver power requirement and switching speed in hard-switched topologies
E_AS	390 mJ - Confirmed single-pulse avalanche energy rating for inductive load protection
R_θJC	0.9°C/W - Supports thermal design with heatsink interface resistance ≤0.5°C/W for 100°C case operation
t_rr	65 ns - Body diode reverse recovery time measured at I_F = 55 A, dI_F/dt = 100 A/μs

Pinout & Package

IRL3303PBF uses JEDEC-standard TO-220AB package with exposed drain tab for thermal and electrical connection. Leads are tin-plated, lead-free compliant per RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Receives logic-level or PWM signal; requires 10 V for full enhancement; gate capacitance C_iss = 3200 pF
2 – DRAIN	Main current output terminal	Internally connected to metal tab; electrically and thermally coupled to heatsink; rated for 30 V blocking
3 – SOURCE	Reference node for gate drive and current return	Common return path for load current; used as ground reference in low-side switch configurations
4 – DRAIN	Secondary drain connection	Parallel drain path to Pin 2; reduces package inductance and improves current sharing in high-frequency switching

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max = 2.0 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs
Low R_DS(on) at 4.5 V	6.0 mΩ - enables use in 5 V gate-drive systems without gate boosters
Enhanced avalanche rating	E_AS = 390 mJ - supports reliable operation under inductive turn-off stress without snubbers
Soft-recovery body diode	dv/dt < 5.5 V/ns - minimizes EMI and voltage overshoot during freewheeling in buck and half-bridge stages

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V input to 5 V/30 A output step-down converter in industrial PLC power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 250 kHz with 4.5 V gate drive from controller IC.

Use Value: 3.3 mΩ R_DS(on) limits conduction loss to 2.97 W at 30 A, reducing heatsink size by 40% vs. 5 mΩ alternatives.

Use Scenario: H-bridge driver for 24 V, 40 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: High-current quadrant-switching element with bidirectional current capability via body diode.

Use Value: 65 ns t_rr and soft recovery suppress voltage spikes >45 V during direction reversal, eliminating need for external flyback diodes.

Hot-Swap Controller

Power OR-ing Circuit

Use Scenario: Inrush-limited 24 V backplane insertion in telecom shelf with 80 A peak current.

IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap IC with current-sense feedback.

Use Value: 110 A continuous rating and 0.9°C/W R_θJC support 80 A operation at ≤85°C case temperature without forced air.

Use Scenario: Redundant 12 V power supply OR-ing in network router with dual AC/DC inputs.

IC Role / Device Role / Timing Role: Forward-path ideal diode replacement with gate driven by precision current comparator.

Use Value: 1.3 V body diode V_F at 55 A enables lower forward drop than discrete Schottky solutions above 30 A, improving efficiency by 1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 95 nC; same TO-220AB package	Higher gate charge increases driver losses in >500 kHz designs	Preferred where lowest on-resistance is critical and gate drive capability permits higher Q_g
STP36NF3L	R_DS(on) = 4.5 mΩ @ 10 V; V_GS(th) = 1.0–2.5 V; TO-220FP package (isolated tab)	Non-isolated tab in IRL3303PBF simplifies heatsinking but requires insulating hardware	Select STP36NF3L when electrical isolation between drain and heatsink is mandatory

Compared with IRL3303PBF, IRL3803PBF offers marginally lower conduction loss but demands more gate drive energy, while STP36NF3L trades higher R_DS(on) for drain-to-heatsink isolation-critical in floating-ground or multi-rail systems.

Availability

IRL3303PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, hot-swap controllers, and power OR-ing circuits requiring stable component supply and long-term industrial availability.

Supply support for IRL3303PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, with global R&D and manufacturing infrastructure.

IRL3303PBF belongs to the HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching in industrial power supplies and motor control where gate drive simplicity and thermal efficiency are prioritized.

FAQ

Is IRL3303PBF suitable for 5 V gate drive applications?

Yes. With V_GS(th) ranging from 1.0 V to 2.0 V and R_DS(on) = 6.0 mΩ at V_GS = 4.5 V, IRL3303PBF fully enhances using standard 5 V logic outputs. It delivers usable current capability down to 4.5 V gate drive, making it compatible with most microcontrollers and gate drivers without level-shifting circuitry.

What is the maximum safe operating area (SOA) at 100°C case temperature?

At T_C = 100°C, the SOA curve supports 70 A continuous drain current at V_DS = 10 V for DC operation, and 35 A at V_DS = 20 V. Pulse operation (≤10 ms) extends this to 95 A at 10 V. These limits assume proper PCB copper area and heatsink interface resistance ≤0.5°C/W.

Does IRL3303PBF have avalanche ruggedness rating?

Yes. IRL3303PBF is 100% tested for unclamped inductive switching (UIS) and specified with E_AS = 390 mJ at T_J = 25°C. This rating applies to single-pulse conditions and confirms robustness against inductive turn-off transients in relay drivers and motor control H-bridges.

Can IRL3303PBF be mounted directly to a heatsink without insulation?

Yes, but only if the heatsink is electrically isolated from system ground. The TO-220AB package exposes the drain (Pins 2 and 4) on the metal tab. Direct mounting is permitted when the heatsink is floating or referenced to drain potential; otherwise, an insulating pad or mica washer with thermal grease is required to prevent short circuits.

IRL3303PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3303PBF FAQ

1.How can I place an order for IRL3303PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3303PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3303PBF reliable?

The price and inventory of IRL3303PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3303PBF is usually 5 days.

3.What payment methods are accepted for IRL3303PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3303PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3303PBF?

IRL3303PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3303PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3303PBF?

For technical support, including IRL3303PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3303PBF requirements.

6.How does Aetrix verify that IRL3303PBF is sourced from the original manufacturer or authorized distributors?

All IRL3303PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3303PBF meets industry standards.

7.What is the process for return or replacement of IRL3303PBF?

All IRL3303PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3303PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3303PBF part is unused and in its original packaging.

Return procedure for IRL3303PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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