Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3502

Name: IRL3502
Brand: Infineon Technologies
SKU: IRL3502
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRL3502

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3502.pdf

Description:: MOSFET N-CH 20V 110A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,729

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRL3502 from Infineon Technologies (formerly International Rectifier) is a 20V, 110A N-channel logic-level Power MOSFET in TO-220AB package, optimized for 4.5V–7.0V gate drive and designed specifically for CPU core DC-DC converters. It features R_DS(on) = 7.0 mΩ @ V_GS = 7.0V, 64A; 8.0 mΩ @ V_GS = 4.5V, 64A; and supports pulsed drain current up to 420A.

For engineers reviewing the IRL3502 datasheet, IRL3502 pinout, IRL3502 application, or IRL3502 equivalent, key selection criteria include low R_DS(on) at 4.5V gate drive, fast switching (t_r = 140 ns, t_f = 130 ns), avalanche ruggedness (E_AS = 390 mJ), thermal resistance (R_θJC = 0.89°C/W), and TO-220AB mechanical compatibility for heatsink mounting.

Technical Context

This HEXFET® device uses advanced process technology and optimized gate oxide design to maximize conduction efficiency and minimize switching losses in high-current, low-voltage synchronous buck stages. Its low threshold voltage (V_GS(th) = 0.70V typ.) enables reliable turn-on with logic-level controllers, and its integrated body diode supports freewheeling in DC-DC topologies.

The MOSFET operates across –55°C to +150°C junction temperature range and sustains repetitive avalanche energy (E_AR = 14 mJ) under controlled conditions. Its gate charge profile (Q_g = 110 nC, Q_gd = 39 nC) and capacitance values (C_iss = 4700 pF, C_oss = 1900 pF) are tailored for high-frequency operation with minimal Miller effect.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum drain-source blocking voltage for 12V/5V input rails in CPU VRMs
R_DS(on) @ 4.5V	8.0 mΩ - Enables <1W conduction loss at 64A in compact VRM designs
R_DS(on) @ 7.0V	7.0 mΩ - Supports lowest possible I²R loss when driven by 7V gate drivers
Q_g	110 nC - Determines gate driver power requirement and switching speed trade-off
t_r/t_f	140/130 ns - Enables efficient operation at >300 kHz switching frequencies
E_AS	390 mJ - Withstands single-pulse inductive energy during load dump or fault events
R_θJC	0.89 °C/W - Allows direct heatsink mounting for thermal management in high-power density layouts

Pinout & Package

IRL3502 is housed in a TO-220AB package with isolated tab (drain-connected), standard lead pitch, and mechanical dimensions compliant with JEDEC outline. The package supports screw-mount heatsinking (10 lbf·in torque) and has low thermal resistance to case.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives logic-level gate drive (4.5–7.0V); low input capacitance enables fast edge rates
2 - Drain	High-side power path	Connected to input rail and heatsink tab; carries full load current and withstands 20V transients
3 - Source	Reference node / return path	Serves as power ground reference for gate driver and current sensing; low-inductance layout critical
4 - Drain (Tab)	Thermal & electrical connection	Electrically tied to pin 2; provides primary thermal path to heatsink; requires insulating washer if isolated mounting

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS = 4.5V, enabling direct interface with PWM controllers without level-shifting
Optimized R_DS(on) vs. gate voltage curve	Sub-10 mΩ on-resistance at 4.5V ensures minimal conduction loss in 5V/3.3V control domains
Fast intrinsic switching performance	Low Q_gd/Q_g ratio (35%) reduces Miller plateau duration and improves dV/dt immunity
Robust body diode	V_SD = 1.3V @ 64A, t_rr = 87–130 ns - Supports synchronous rectification with low reverse recovery loss
Avalanche-rated construction	Rated for single-pulse E_AS = 390 mJ and repetitive E_AR = 14 mJ - Enhances system reliability during transient overloads

Applications

CPU Core Voltage Regulator

Server VRM High-Side Switch

Use Scenario: Primary high-side switch in multiphase synchronous buck converter supplying 0.8–1.5V to modern x86 CPU cores.

IC Role / Device Role / Timing Role: Main power switch handling peak currents >100A per phase; operates at 300–600 kHz with precise duty-cycle control.

Use Value: Low R_DS(on) at 4.5V gate drive minimizes conduction loss; fast switching reduces dead-time losses and improves light-load efficiency.

Use Scenario: High-current phase-leg switch in 12V-input server VRM delivering up to 200A to ASIC/FPGA power domains.

IC Role / Device Role / Timing Role: High-side MOSFET in interleaved buck stage; synchronized with low-side counterpart via gate driver IC.

Use Value: Avalanche rating protects against inductive kickback during phase shedding; TO-220AB mechanical robustness supports high-volume automated assembly.

Industrial PLC Power Stage

Telecom DC-DC Intermediate Bus Converter

Use Scenario: Output switch in 24V-to-5V/3.3V point-of-load regulator powering microcontrollers and I/O drivers in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary switching element operating at fixed frequency with overcurrent protection feedback.

Use Value: Wide temperature range (–55°C to +150°C) ensures reliability in uncooled enclosures; low gate charge simplifies driver selection.

Use Scenario: High-efficiency step-down converter converting 48V telecom bus to 12V intermediate rail for downstream POL modules.

IC Role / Device Role / Timing Role: High-side switch in hard-switched buck topology; thermally coupled to aluminum chassis for passive cooling.

Use Value: R_θJC = 0.89°C/W enables >80W continuous dissipation with modest heatsinking; low C_oss improves light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 4.5 mΩ @ 10V (but 7.5 mΩ @ 4.5V); higher Q_g = 130 nC; same TO-220AB package	Better conduction loss at higher gate drive; less suitable for strict 4.5V-only systems	Prefer when gate drive can reach ≥5.5V and lower R_DS(on) outweighs increased switching loss
STP110N2LH5	R_DS(on) = 3.2 mΩ @ 10V, 6.5 mΩ @ 4.5V; lower Q_gd = 32 nC; same V_DSS and package	Improved Miller charge ratio enhances dV/dt immunity in noisy environments	Select when layout EMI sensitivity demands lower Q_gd, and tighter R_DS(on) tolerance is required

Compared with IRL3502, IRL3713PbF offers lower on-resistance at elevated gate voltage but increases gate drive demand, while STP110N2LH5 delivers superior switching robustness and marginally better conduction-both require validation of gate drive capability and thermal layout.

Availability

IRL3502 is available at Aetrix Electronics and suitable for CPU core VRMs, server power stages, industrial PLC power supplies, and telecom intermediate bus converters requiring stable component supply and long-term manufacturability.

Supply support for IRL3502 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRL3502 belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low gate-threshold operation and thermal resilience are critical.

FAQ

Is IRL3502 suitable for 3.3V gate drive applications?

No. While V_GS(th) is as low as 0.70V, the device is not fully enhanced at 3.3V: R_DS(on) rises sharply below 4.5V, exceeding 20 mΩ. Datasheet characterization and SOA curves confirm reliable operation only at V_GS ≥ 4.5V. For true 3.3V drive, consider devices like IRF7470 or SiR872DP.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 67A at T_C = 100°C with V_GS = 5.0V. This value is derived from thermal derating of the 110A rating at 25°C using the linear derating factor of 1.1 W/°C and R_DS(on) temperature coefficient. Operation above this current requires active cooling or reduced ambient temperature.

Can IRL3502 be used in parallel configurations?

Yes, but with careful attention to gate loop inductance and source inductance matching. The device exhibits positive R_DS(on) temperature coefficient, supporting current sharing. However, LS = 7.5 nH and LD = 4.5 nH must be balanced across paralleled units, and individual gate resistors (≥3.8Ω) are recommended to damp oscillation and ensure simultaneous turn-on.

Does the TO-220AB package provide electrical isolation between drain and mounting surface?

No. In the TO-220AB package, the metal tab is internally connected to the drain (pin 2). Electrical isolation requires an insulating thermal pad or mica washer plus isolated mounting hardware. Failure to isolate will short the drain to heatsink, causing immediate circuit failure and potential safety hazard.

IRL3502 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 64A, 7V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3502 FAQ

1.How can I place an order for IRL3502 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3502 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3502 reliable?

The price and inventory of IRL3502 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3502 is usually 5 days.

3.What payment methods are accepted for IRL3502?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3502 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3502?

IRL3502 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3502 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3502?

For technical support, including IRL3502 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3502 requirements.

6.How does Aetrix verify that IRL3502 is sourced from the original manufacturer or authorized distributors?

All IRL3502 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3502 meets industry standards.

7.What is the process for return or replacement of IRL3502?

All IRL3502 units undergo pre-shipment inspection (PSI). If there is an issue with IRL3502, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3502 part is unused and in its original packaging.

Return procedure for IRL3502:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…