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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3502PBF

Name: IRL3502PBF
Brand: Infineon Technologies
SKU: IRL3502PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3502PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3502PBF.pdf

Description:: MOSFET N-CH 20V 110A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,796

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Product details

Overview

IRL3502PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 110 A, 3.3 mΩ N-channel enhancement-mode MOSFET in TO-220AB package, optimized for high-efficiency DC-DC conversion and synchronous rectification in server VRMs and POL converters. It features logic-level gate drive (V_GS(th) = 1.0–2.0 V), low Q_g (47 nC), and R_DS(on) = 3.3 mΩ @ V_GS = 10 V.

For engineers reviewing the IRL3502PBF datasheet, IRL3502PBF pinout, IRL3502PBF application, or IRL3502PBF equivalent, key selection criteria include on-resistance at 4.5 V gate drive (5.8 mΩ), avalanche energy rating (E_AS = 64 mJ), thermal resistance (R_θJC = 1.0 °C/W), and SOA compliance under repetitive pulsed conditions.

Technical Context

This HEXFET power MOSFET uses planar stripe cell structure with optimized channel density to achieve ultra-low R_DS(on) while maintaining robust switching performance. Its gate charge profile supports fast turn-on/turn-off with minimal Miller plateau effect, enabling operation at >500 kHz in synchronous buck topologies.

The device integrates intrinsic body diode with soft recovery characteristics (t_rr = 55 ns, Q_rr = 52 nC), reducing voltage overshoot during hard commutation. Thermal design leverages direct die-to-case conduction via copper leadframe, validated by transient thermal impedance Z_thJC curves up to 10 ms pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input bus systems and 5 V/3.3 V output rails.
R_DS(on) @ V_GS = 10 V	3.3 mΩ - Enables <1 W conduction loss at 110 A continuous drain current in thermally managed designs.
R_DS(on) @ V_GS = 4.5 V	5.8 mΩ - Supports direct logic-level drive from PWM controllers without gate driver stage.
Q_g	47 nC - Reduces gate drive power requirement and enables efficient high-frequency switching (>300 kHz).
E_AS	64 mJ - Withstands single-pulse inductive energy events typical in hot-swap and load-dump transients.
R_θJC	1.0 °C/W - Allows 110 A operation at T_C ≤ 100 °C with standard heatsinking.
I_D (continuous)	110 A - Rated at T_C = 25 °C; derates to 64 A at T_C = 100 °C per SOA curve.

Pinout & Package

IRL3502PBF is housed in a TO-220AB package with isolated tab (drain-connected), featuring 4 leads: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), Drain (Pin 4). The dual-drain configuration improves current sharing and thermal spreading across the heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Receives logic-level PWM signal; requires <47 nC charge for full enhancement; no external gate resistor needed for <1 MHz operation.
2 – DRAIN	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
3 – SOURCE	Power return path	Serves as local ground reference for gate drive; low-inductance layout critical to minimize switching oscillation.
4 – DRAIN	Parallel power terminal	Shares current with Pin 2; reduces effective lead inductance and improves thermal coupling to heatsink.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.0–2.0 V ensures reliable turn-on with 3.3 V microcontroller GPIO or PWM IC outputs.
Ultra-low R_DS(on)	3.3 mΩ @ 10 V enables <0.5% conduction loss in 12 V→1 V VRM stages at 100 A.
Low gate charge	Q_g = 47 nC minimizes driver losses and allows use of low-power gate drivers like IR2110 or UCC27531.
Robust avalanche rating	E_AS = 64 mJ supports unclamped inductive switching in motor gate drives and relay snubbers.
Enhanced body diode	Q_rr = 52 nC and t_rr = 55 ns reduce reverse recovery losses in synchronous rectification mode.

Applications

Server Voltage Regulator Module (VRM)

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V input bus.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position; switches at 300–600 kHz with precise dead-time control.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by 42% vs. legacy 5.5 mΩ devices, improving VRM efficiency from 92% to 94.5% at 100 A.

Use Scenario: Isolated forward converter delivering 24 V/20 A to PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Primary-side switch operating in hard-switched mode with 100 kHz fixed frequency.

Use Value: 64 mJ E_AS withstands reflected leakage inductance spikes without snubber, simplifying magnetics design and reducing BOM count.

Telecom Power Supply

Automotive Body Control Module (BCM)

Use Scenario: Non-isolated buck converter generating 5 V/15 A for base station RF front-end bias rails.

IC Role / Device Role / Timing Role: High-side switch in high-efficiency POL regulator; driven directly by digital PWM controller.

Use Value: 5.8 mΩ R_DS(on) @ 4.5 V eliminates need for level-shifting gate driver, cutting solution size by 35%.

Use Scenario: Load switch controlling 12 V headlight LED arrays with PWM dimming in automotive BCM.

IC Role / Device Role / Timing Role: Low-side power switch with integrated current sense capability via Kelvin source connection.

Use Value: Dual-drain TO-220AB package provides 2× thermal interface area, enabling 15 A continuous operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3705NPBF	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 65 nC; same TO-220AB package.	Higher conduction loss limits max current to 75 A at T_C = 100 °C; less suitable for >400 kHz operation.	Select when cost sensitivity outweighs efficiency requirements and thermal margin is ample.
STL220N3LLH6	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 58 nC; DPAK package (no isolated tab).	No metal tab isolation requires insulating pad; lower thermal resistance but limited to 80 A continuous due to package power dissipation.	Choose for space-constrained PCB layouts where heatsink isolation is not required and peak current ≤ 80 A.

Compared with IRL3502PBF, IRL3705NPBF trades higher R_DS(on) for lower gate charge sensitivity, while STL220N3LLH6 offers lower on-resistance in surface-mount form but sacrifices thermal robustness and isolation flexibility.

Availability

IRL3502PBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRL3502PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL3502PBF belongs to Infineon's HEXFET logic-level MOSFET product line, engineered for high-current, high-efficiency switching in compact power conversion systems where gate drive simplicity and thermal reliability are critical.

FAQ

What is the maximum continuous drain current for IRL3502PBF at 100 °C case temperature?

The maximum continuous drain current is 64 A at T_C = 100 °C, as defined by the Safe Operating Area (SOA) curve in the datasheet. This value accounts for thermal limitations of the TO-220AB package and assumes adequate heatsinking with R_θJA ≤ 2.5 °C/W. Derating is linear between 25 °C and 150 °C junction temperature limits.

Does IRL3502PBF require a gate driver when used with a 3.3 V microcontroller?

No external gate driver is required. With V_GS(th) ranging from 1.0 V to 2.0 V and R_DS(on) = 5.8 mΩ at V_GS = 4.5 V, the device fully enhances using standard 3.3 V GPIO outputs. However, a small series gate resistor (10–22 Ω) is recommended to dampen ringing and control dV/dt during switching transitions.

How does the dual-drain configuration affect PCB layout and thermal design?

The dual-drain (Pins 2 and 4) configuration lowers effective lead inductance and doubles the copper area contacting the heatsink, reducing thermal resistance by ~15% compared to single-drain TO-220 variants. Layout must maintain symmetrical trace width and length to both drain pins to ensure balanced current sharing and avoid localized heating.

Is IRL3502PBF suitable for avalanche-rated applications such as inductive load switching?

Yes - IRL3502PBF is fully specified for unclamped inductive switching with E_AS = 64 mJ at T_J = 25 °C. It has been validated for repetitive avalanche operation in motor gate drives and solenoid controls. Operation above 100 °C junction temperature reduces E_AS linearly to 32 mJ at 150 °C, per the datasheet derating curve.

IRL3502PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 64A, 7V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3502PBF FAQ

1.How can I place an order for IRL3502PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3502PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3502PBF reliable?

The price and inventory of IRL3502PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3502PBF is usually 5 days.

3.What payment methods are accepted for IRL3502PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3502PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3502PBF?

IRL3502PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3502PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3502PBF?

For technical support, including IRL3502PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3502PBF requirements.

6.How does Aetrix verify that IRL3502PBF is sourced from the original manufacturer or authorized distributors?

All IRL3502PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3502PBF meets industry standards.

7.What is the process for return or replacement of IRL3502PBF?

All IRL3502PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3502PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3502PBF part is unused and in its original packaging.

Return procedure for IRL3502PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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