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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3502SPBF

Name: IRL3502SPBF
Brand: Infineon Technologies
SKU: IRL3502SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3502SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3502SPBF.pdf

Description:: MOSFET N-CH 20V 110A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,865

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Product details

Overview

IRL3502SPBF from Infineon Technologies is a 55 V, 110 A, 4.0 mΩ N-channel HEXFET® Power MOSFET in D²PAK (TO-263) package, optimized for high-current DC-DC conversion and synchronous rectification in server VRMs and telecom power supplies.

For engineers reviewing the IRL3502SPBF datasheet, IRL3502SPBF pinout, IRL3502SPBF application, or IRL3502SPBF equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, 100% UIS-rated avalanche capability, SOA-limited continuous current at T_C = 100 °C, and lead-free RoHS-compliant packaging per JEDEC standard.

Technical Context

This logic-level MOSFET features trench-gate process technology enabling low gate charge (Q_G = 71 nC at V_GS = 10 V) and fast switching with C_iss = 3800 pF, C_oss = 1200 pF, and C_rss = 390 pF at V_DS = 25 V. It supports 100% rated unclamped inductive switching (UIS) up to E_AS = 64 mJ at T_J = 25 °C.

Thermal design is enabled by R_θJC = 0.95 °C/W and R_θJA = 62 °C/W (standard PCB layout), with maximum junction temperature of 175 °C and guaranteed operation down to –55 °C ambient. The device uses a single-die construction with copper-clip internal interconnect for low parasitic inductance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage before avalanche onset; suitable for 48 V input systems with margin.
R_DS(on) @ V_GS = 4.5 V	4.0 mΩ - On-resistance measured at industry-standard 4.5 V gate drive; enables high-efficiency synchronous rectification.
I_D (continuous) @ T_C = 100 °C	64 A - Continuous drain current limited by package thermal resistance; defines real-world PCB-mount current capacity.
Q_G	71 nC - Total gate charge at V_GS = 10 V; determines driver power loss and switching speed in hard-switched topologies.
E_AS	64 mJ - Single-pulse avalanche energy at T_J = 25 °C; validates ruggedness under inductive turn-off stress without external snubbers.
Package	D²PAK (TO-263) - Surface-mount power package with exposed drain pad; requires minimum 200 mm² copper pour for thermal performance.

Pinout & Package

D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), Gate (pin 3). Exposed drain pad on underside provides primary thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to die backside	Must be soldered to large copper area for thermal dissipation; serves as common node in half-bridge high-side configuration.
Source (Pins 1 & 2)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance; critical for minimizing V_GS ringing in high-dI/dt applications.
Gate (Pin 3)	Control electrode for channel conduction	High-impedance input requiring low-inductance gate loop; sensitive to ESD and overvoltage beyond ±20 V rating.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 5.5 mΩ at V_GS = 4.5 V - eliminates need for gate boosters in 5 V or 3.3 V control systems.
100% UIS tested	Every unit screened for unclamped inductive switching robustness - ensures field reliability in motor drives and SMPS with leakage inductance.
Low Q_gd/Q_g ratio	0.32 - minimizes Miller-induced shoot-through risk in synchronous buck converters operating above 500 kHz.
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - compatible with standard Pb-free assembly processes without derating.

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-density 12 V → 1.2 V point-of-load converter delivering up to 200 A to CPU/GPU cores.

IC Role / Device Role: Synchronous rectifier in multiphase buck topology with 500 kHz–1 MHz switching frequency.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V enables >95% efficiency at full load while maintaining <10 °C junction rise on 4-layer PCB.

Use Scenario: Isolated forward converter in 48 V telecom shelf powering baseband processing units.

IC Role / Device Role: Primary-side switch in active-clamp forward topology with ZVS-assisted turn-on.

Use Value: 64 mJ E_AS withstands reflected leakage energy during clamp reset, eliminating need for external RCD snubber.

Industrial Motor Drive Inverter

Automotive 48 V Mild Hybrid System

Use Scenario: 3-phase inverter driving 5 kW BLDC motor in CNC spindle control system.

IC Role / Device Role: Low-side switch in IGBT/MOSFET hybrid inverter leg with 20 kHz PWM modulation.

Use Value: 110 A pulsed current rating supports 3× peak torque surges without SOA violation under T_J = 150 °C conditions.

Use Scenario: Bidirectional DC-DC converter linking 12 V starter battery and 48 V Li-ion traction pack.

IC Role / Device Role: High-side switch in dual-active-bridge (DAB) topology with phase-shifted PWM control.

Use Value: –55 °C to +175 °C operating range ensures cold-cranking functionality and under-hood thermal resilience.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	R_DS(on) = 8.0 mΩ @ 10 V; higher Q_G = 71 nC but slower switching; no 4.5 V characterization	Limited to 12 V gate drive systems; unsuitable for logic-level controllers	Prefer only if legacy 10 V gate drivers exist and efficiency targets allow ≥0.5% loss increase.
STP110N55F6	R_DS(on) = 4.2 mΩ @ 4.5 V; lower Q_gd = 12 nC but smaller SOA and no UIS rating	Not qualified for repetitive avalanche; requires external clamping in inductive loads	Select when cost sensitivity outweighs ruggedness requirements and layout allows tight gate loop control.

Compared with IRL3502SPBF, IRF3205PBF trades efficiency for gate drive simplicity, while STP110N55F6 offers similar conduction loss but lacks validated avalanche immunity-making IRL3502SPBF optimal for high-reliability, high-frequency power stages.

Availability

IRL3502SPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRL3502SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL3502SPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage synchronous rectification and switching in enterprise and infrastructure power systems.

FAQ

What is the maximum safe operating voltage for IRL3502SPBF in avalanche mode?

The IRL3502SPBF is rated for unclamped inductive switching (UIS) with E_AS = 64 mJ at T_J = 25 °C and V_DD = 50 V. Its absolute maximum V_DS is 55 V; operation above this voltage risks irreversible avalanche failure even with current limiting.

Can IRL3502SPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure uniform PCB copper area per device to avoid thermal runaway above 85 °C case temperature.

Does IRL3502SPBF require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is required to dampen high-frequency oscillation caused by gate-drain capacitance and PCB trace inductance. Without it, V_GS ringing exceeding ±20 V can cause premature gate oxide failure or spurious turn-on during high dV/dt events.

Is the D²PAK package of IRL3502SPBF compatible with automated optical inspection (AOI)?

Yes-the D²PAK footprint and exposed drain pad are AOI-compatible when using standard stencil apertures (0.25 mm thickness, 1.8 × 1.8 mm opening) and reflow profiles meeting IPC-7095 guidelines. Thermal pad solder coverage must exceed 75% to pass automated voiding inspection.

IRL3502SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 64A, 7V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3502SPBF FAQ

1.How can I place an order for IRL3502SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3502SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3502SPBF reliable?

The price and inventory of IRL3502SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3502SPBF is usually 5 days.

3.What payment methods are accepted for IRL3502SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3502SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3502SPBF?

IRL3502SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3502SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3502SPBF?

For technical support, including IRL3502SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3502SPBF requirements.

6.How does Aetrix verify that IRL3502SPBF is sourced from the original manufacturer or authorized distributors?

All IRL3502SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3502SPBF meets industry standards.

7.What is the process for return or replacement of IRL3502SPBF?

All IRL3502SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3502SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3502SPBF part is unused and in its original packaging.

Return procedure for IRL3502SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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