Infineon Technologies IRL3705NPBF
- Part No.:
- IRL3705NPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL3705NPBF.pdf
- Description:
- MOSFET N-CH 55V 89A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,830
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Product details
Overview
IRL3705NPBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in TO-220AB package, rated for 55 V VDS, 89 A continuous drain current at TC = 25°C, and 10 mΩ RDS(on) at VGS = 10 V. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and power supply synchronous rectifiers.
For engineers reviewing the IRL3705NPBF datasheet, IRL3705NPBF pinout, IRL3705NPBF application, or IRL3705NPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4.0–5.0 V gate voltage, avalanche ruggedness (EAS = 340 mJ), and thermal performance (RθJC = 0.90 °C/W).
Technical Context
This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining fast switching (tr = 140 ns, tf = 78 ns) and robust unclamped inductive switching capability. Its body diode exhibits trr = 94–140 ns and Qrr = 290–440 nC under defined conditions.
The MOSFET features fully rated avalanche energy (EAS = 340 mJ), dynamic dv/dt immunity (5.0 V/ns), and operation up to TJ = +175°C. Gate charge parameters-Qg = 98 nC, Qgd = 49 nC-are optimized for efficient hard-switching in 20–100 kHz power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on) @ VGS = 10 V | 10 mΩ - Enables <1 W conduction loss at 10 A, critical for high-current DC-DC output stages |
| RDS(on) @ VGS = 4.0 V | 18 mΩ - Supports direct microcontroller GPIO drive without level-shifting circuitry |
| ID (continuous, TC = 25°C) | 89 A - Sustains full-load current in industrial motor controllers with heatsink |
| EAS | 340 mJ - Withstands single-pulse inductive energy during fault events without failure |
| RθJC | 0.90 °C/W - Allows precise junction temperature estimation using case thermistor placement |
| Qg | 98 nC - Determines gate driver peak current requirement (~1 A @ 100 ns rise time) |
Pinout & Package
IRL3705NPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected). The package provides low thermal resistance to heatsink (RθCS = 0.50 °C/W with greased surface) and mechanical mounting via M3 screw (1.1 N·m torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts logic-level input (1.0–2.0 V threshold); requires <100 nA leakage handling in high-impedance bias networks |
| D (Drain) | Main current sink / high-voltage node | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits |
| S (Source) | Main current source / reference node | Serves as local power ground return; internal source inductance (LS = 7.5 nH) impacts high-di/dt ringing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.0 V, enabling direct interface with 3.3 V/5 V MCUs and PWM controllers |
| Fully avalanche-rated | Guaranteed single-pulse EAS = 340 mJ supports reliable operation in inductive load switching without external snubbers |
| Dynamic dv/dt rating | Rated for 5.0 V/ns transient immunity, reducing risk of false turn-on in high-noise motor drive environments |
| High-temperature operation | Rated for continuous operation up to TJ = +175°C, supporting sealed or high-ambient industrial enclosures |
| Low gate charge | Qg = 98 nC minimizes driver power loss and enables >100 kHz switching in resonant topologies |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: 24 V BLDC motor control in HVAC blowers with PWM frequency ≤ 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; conducts during PWM low period with minimal conduction loss. Use Value: 10 mΩ RDS(on) limits I²R loss to <0.9 W at 30 A, reducing heatsink size by 40% vs. 20 mΩ alternatives. | Use Scenario: Secondary-side synchronous rectification in 48 V input telecom DC-DC modules. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch. Use Value: Body diode VSD = 1.3 V and Qrr = 290 nC enable faster recovery than 45 V Schottky, cutting reverse recovery loss by ~35%. |
| Industrial Power Supply Switch | Overcurrent Protection Switch |
Use Scenario: Main 55 V input switch in programmable lab power supplies with soft-start and foldback protection. IC Role / Device Role / Timing Role: High-side switch controlling bulk input; subjected to repetitive 100 µs overloads. Use Value: Avalanche energy rating (EAS = 340 mJ) ensures survival during 500 ms short-circuit events without derating. | Use Scenario: Electronic fuse in battery management systems protecting 48 V Li-ion strings against >100 A faults. IC Role / Device Role / Timing Role: Current-sense enabled load switch; turned off within 1 µs of overcurrent detection. Use Value: Fast turn-off delay (td(off) = 37 ns) and low Qgd (49 nC) minimize fault energy dissipation during interruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PBF | RDS(on) = 8.0 mΩ @ VGS = 10 V but VGS(th) = 2.0–4.0 V; not logic-level compatible at 3.3 V | Requires gate driver for 3.3 V MCU interfaces; higher conduction loss at 4.0 V gate | Select when gate drive voltage ≥ 5 V and lower RDS(on) outweighs logic-level need |
| STP55NF06L | RDS(on) = 12 mΩ @ VGS = 5 V; Qg = 85 nC; EAS = 280 mJ | Lower avalanche energy and slightly higher on-resistance reduce margin in fault-prone motor drives | Select when cost sensitivity dominates and fault energy is limited to <250 mJ |
Compared with IRF3205PBF and STP55NF06L, IRL3705NPBF uniquely delivers logic-level operation down to 4.0 V gate voltage with industry-leading 340 mJ avalanche rating-critical for unregulated inductive loads where gate drive headroom and fault robustness are non-negotiable.
Availability
IRL3705NPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and programmable power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRL3705NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRL3705NPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in commercial and industrial power conversion systems where thermal efficiency and ruggedness are paramount.
FAQ
Is IRL3705NPBF suitable for surface-mount assembly?
No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's package outline documentation. It requires through-hole mounting with mechanical screw attachment to a heatsink for thermal and mechanical reliability.
What is the maximum recommended gate resistor for 100 kHz switching?
Based on Qg = 98 nC and typical driver capability, a 10 Ω gate resistor supports ~100 ns rise/fall times. For 100 kHz hard-switching, use RG ≤ 15 Ω to maintain tr/tf < 200 ns and limit switching loss to <15% of total loss at 46 A.
Does the body diode support continuous bidirectional current in H-bridge configurations?
Yes-the integral body diode is rated for continuous source current IS = 89 A at TC = 25°C and pulsed ISM = 310 A. However, reverse recovery charge Qrr = 290–440 nC must be managed with dead-time control to avoid shoot-through in H-bridge freewheeling paths.
How does RDS(on) change with temperature?
RDS(on) increases linearly with junction temperature: normalized resistance reaches 2.0× at TJ = 175°C (per Fig. 4). At 100°C, RDS(on) ≈ 13.5 mΩ-designers must verify thermal design ensures TJ stays below 130°C for <15 mΩ operation at full current.
IRL3705NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 98 nC @ 5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3600 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL3705NPBF FAQ
1.How can I place an order for IRL3705NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL3705NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL3705NPBF reliable?
The price and inventory of IRL3705NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705NPBF is usually 5 days.
3.What payment methods are accepted for IRL3705NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL3705NPBF?
IRL3705NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL3705NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL3705NPBF?
For technical support, including IRL3705NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705NPBF requirements.
6.How does Aetrix verify that IRL3705NPBF is sourced from the original manufacturer or authorized distributors?
All IRL3705NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705NPBF meets industry standards.
7.What is the process for return or replacement of IRL3705NPBF?
All IRL3705NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL3705NPBF part is unused and in its original packaging.
Return procedure for IRL3705NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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