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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3705NSTRLPBF

Name: IRL3705NSTRLPBF
Brand: Infineon Technologies
SKU: IRL3705NSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3705NSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3705NSTRLPBF.pdf

Description:: MOSFET N-CH 55V 89A D2PAK

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Product details

Overview

IRL3705NSTRLPBF from Infineon Technologies is a 55 V, 110 A, 8.0 mΩ N-channel HEXFET® Power MOSFET in TO-262 (DPAK) package, optimized for high-current DC-DC conversion, motor drive half-bridges, and synchronous rectification where low R_DS(on) and fast switching reduce conduction and switching losses.

For engineers reviewing the IRL3705NSTRLPBF datasheet, IRL3705NSTRLPBF pinout, IRL3705NSTRLPBF application, or IRL3705NSTRLPBF equivalent, key selection criteria include its 8.0 mΩ R_DS(on) at V_GS = 10 V, 110 A continuous drain current, 175 °C maximum junction temperature, and logic-level gate drive compatibility with 4.0 V threshold voltage.

Technical Context

This MOSFET employs planar stripe cell technology with optimized gate oxide thickness and channel geometry to achieve low on-resistance while maintaining robust avalanche capability (E_AS = 290 mJ at T_J = 25 °C). Its body diode exhibits 1.3 V forward voltage at 77 A and t_rr = 110 ns under specified test conditions.

The device features a fully rated 55 V V_DSS, 110 A I_D (T_C = 25 °C), and 77 A I_D (T_C = 100 °C), with gate charge Q_G = 102 nC and Q_GD = 42 nC at V_GS = 10 V, enabling efficient operation in hard-switched topologies up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage before avalanche breakdown
R_DS(on) @ V_GS=10 V	8.0 mΩ - Enables ≤0.97 W conduction loss at 110 A, critical for high-efficiency power stages
I_D (continuous, T_C=25°C)	110 A - Supports high-current loads without external heatsinking in short-duration duty cycles
V_GS(th)	2.0–4.0 V - Ensures full enhancement with standard 3.3 V/5 V logic-level microcontrollers
Q_G	102 nC - Determines gate driver power requirement and switching speed in PWM applications
E_AS	290 mJ - Specifies single-pulse avalanche energy handling capability for inductive load switching
t_r/t_f	40/50 ns - Defines rise/fall time limits for minimizing switching transition losses

Pinout & Package

IRL3705NSTRLPBF uses the TO-262 (DPAK) surface-mount package with exposed drain pad for thermal dissipation. The package measures 10.16 × 4.70 × 1.02 mm and is lead-free (RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (connected to exposed pad)	Primary heat path to PCB copper; must be soldered to ≥200 mm² thermal pad for rated I_D
Source (S)	Reference node for gate drive and current return path	Low-inductance connection required to minimize V_GS noise during switching transitions
Gate (G)	Control electrode for channel formation	High-impedance input requiring <100 Ω series resistance to damp ringing and prevent oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ at 10 V gate drive reduces conduction loss by >35% vs. legacy 55 V MOSFETs in 48 V bus systems
Logic-level gate	V_GS(th) max 4.0 V ensures reliable turn-on with 3.3 V FPGA I/O or MCU GPIO without level-shifting
Enhanced avalanche rating	290 mJ E_AS supports unclamped inductive switching in motor control H-bridges without snubbers
Fast body diode	t_rr = 110 ns and Q_RR = 120 nC enable efficient synchronous rectification in buck converters
TO-262 thermal design	θ_JC = 0.65 °C/W allows 110 A operation at T_C = 25 °C with minimal heatsink area

Applications

Brushless DC Motor Drive

Server VRM Synchronous Rectifier

Use Scenario: Three-phase inverter stage driving 200–500 W BLDC fans in data center cooling systems.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled half-bridge, conducting 70–90 A peak current per phase.

Use Value: 8.0 mΩ R_DS(on) cuts conduction loss by 2.1 W per FET vs. 12 mΩ alternatives, reducing thermal stress on PCB layout.

Use Scenario: Secondary-side synchronous rectification in 48 V → 12 V server VRM delivering up to 120 A output.

IC Role / Device Role / Timing Role: High-current freewheeling switch replacing Schottky diodes, operating at 300–500 kHz.

Use Value: Body diode t_rr = 110 ns prevents cross-conduction losses during dead-time, improving efficiency by 1.8% at full load.

Industrial DC-DC Converter

Automotive Body Control Module

Use Scenario: 24 V input, 5 V/30 A isolated DC-DC converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 110 A pulsed current during ZVS transitions.

Use Value: 55 V V_DSS provides 20% margin over 24 V bus transients, eliminating need for TVS clamping.

Use Scenario: Load switch for 12 V headlight control in BCM, cycling 15 A incandescent loads.

IC Role / Device Role / Timing Role: High-side power switch with integrated gate driver, activated via CAN-triggered MCU GPIO.

Use Value: 4.0 V V_GS(th) max guarantees turn-on with automotive 3.3 V MCU outputs, avoiding external level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3705ZPBF	R_DS(on) = 9.0 mΩ at 10 V; same V_DSS, higher Q_G (115 nC)	Slightly lower efficiency in high-frequency switching due to increased gate drive loss	Preferred when cost sensitivity outweighs 12% higher conduction loss at 100 A
STP110N55F7	R_DS(on) = 7.5 mΩ; higher V_DSS (55 V), but 175 °C T_J(max) derated to 150 °C	Better conduction loss but reduced thermal margin in sealed enclosures above 85 °C ambient	Chosen for ultra-high-efficiency designs where board space allows larger heatsink

Compared with IRF3705ZPBF and STP110N55F7, IRL3705NSTRLPBF offers optimal balance of low R_DS(on), logic-level drive, and full 175 °C thermal rating-making it ideal for compact, high-reliability industrial power stages where gate drive simplicity and thermal headroom are prioritized over marginal R_DS(on) gains.

Availability

IRL3705NSTRLPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, server VRM synchronous rectifiers, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRL3705NSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL3705N belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-current, low-voltage switching applications where gate drive simplicity and thermal robustness are essential.

FAQ

What is the maximum safe operating temperature for IRL3705NSTRLPBF?

The absolute maximum junction temperature is 175 °C. Continuous operation above 150 °C requires derating I_D per the SOA curve; thermal design must ensure θ_JA ≤ 1.2 °C/W with ≥400 mm² 2-oz copper pour to sustain 110 A at T_A = 70 °C.

Can IRL3705NSTRLPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. For two devices, use matched gate resistors (≤1 Ω difference) and symmetrical PCB layout to limit imbalance to <8% at 200 A total current, per Infineon AN-1044 guidelines.

Does this MOSFET require a gate resistor, and what value is recommended?

A series gate resistor is mandatory to suppress oscillation. For 100 kHz PWM with 1 A peak gate driver, a 10 Ω resistor limits dV/dt to <5 V/ns and reduces EMI. Lower values (4.7 Ω) may be used if driver slew rate is limited to ≤2 V/ns.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has t_rr = 110 ns and Q_RR = 120 nC at I_F = 77 A, making it viable for synchronous rectification up to 500 kHz. However, dead-time must exceed 150 ns to avoid shoot-through, verified by oscilloscope measurement of V_DS and gate waveforms.

IRL3705NSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3705NSTRLPBF FAQ

1.How can I place an order for IRL3705NSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3705NSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3705NSTRLPBF reliable?

The price and inventory of IRL3705NSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705NSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRL3705NSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705NSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3705NSTRLPBF?

IRL3705NSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3705NSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3705NSTRLPBF?

For technical support, including IRL3705NSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705NSTRLPBF requirements.

6.How does Aetrix verify that IRL3705NSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL3705NSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705NSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRL3705NSTRLPBF?

All IRL3705NSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705NSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3705NSTRLPBF part is unused and in its original packaging.

Return procedure for IRL3705NSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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