Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL3705Z

Part No.:
IRL3705Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL3705Z.pdf
Description:
MOSFET N-CH 55V 75A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,677

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL3705Z from Infineon Technologies (formerly International Rectifier) is an N-channel logic-level HEXFET® Power MOSFET in TO-220AB package, rated for 55V VDSS, 8.0 mΩ RDS(on) at VGS = 10 V, and 75 A continuous drain current at TC = 25°C. It features 175°C junction temperature rating, fast switching (tr = 240 ns, tf = 83 ns), and tested repetitive avalanche capability up to Tjmax, making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL3705Z datasheet, IRL3705Z pinout, IRL3705Z application, or IRL3705Z equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–3.0 V), low conduction loss at 5 V gate bias, body diode recovery performance (trr = 16–24 ns), and thermal resistance (RθJC = 1.14 °C/W) for heatsink-limited industrial power stages.

Technical Context

This MOSFET employs advanced planar silicon processing to minimize on-resistance per die area while maintaining robust avalanche ruggedness. Its gate charge profile (Qg = 40–60 nC, Qgd = 21 nC) supports efficient hard-switching in synchronous buck topologies operating below 200 kHz.

The integrated body diode exhibits low forward voltage (VSD = 1.3 V at IS = 52 A) and controlled reverse recovery (Qrr = 7.4–11 nC), enabling reliable operation in freewheeling paths without external Schottky supplementation in medium-power SMPS designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 48 V systems.
RDS(on)8.0 mΩ @ VGS = 10 V - Conduction loss of 45 W at 75 A; enables <1% resistive loss in 50 A load switches.
ID (cont)75 A @ TC = 25°C - Sustained current capability with adequate heatsinking; derates to 61 A at 100°C case temp.
Qg40–60 nC - Gate drive energy requirement determines driver strength needed for <100 ns switching transitions.
tr/tf240 ns / 83 ns - Rise/fall times define minimum practical PWM frequency and EMI filter sizing in buck regulators.
Tjmax175°C - Enables operation in sealed enclosures or high-ambient environments without forced air cooling.
EAS340 mJ (tested) - Single-pulse avalanche energy capacity allows safe inductive turn-off in relay drivers or solenoid controls.

Pinout & Package

IRL3705Z uses a TO-220AB package with isolated tab (drain-connected). The three terminals are arranged in standard single-row configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeAccepts logic-level (≥4.5 V) or 5 V microcontroller output directly; threshold voltage 1.0–3.0 V ensures turn-on with standard digital I/O.
Drain (D)High-side current pathInternally connected to metal tab; must be electrically isolated from heatsink unless circuit ground reference permits direct mounting.
Source (S)Return path & reference nodeServes as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects high-di/dt ringing during turn-off.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = 4.5 V (RDS(on) ≤ 11 mΩ), eliminating need for gate boosters in 5 V MCU-controlled loads.
Ultra-low RDS(on)8.0 mΩ at 10 V enables <0.5 W conduction loss at 25 A, reducing thermal design burden in compact power modules.
Repetitive avalanche ratedTested to withstand repeated unclamped inductive switching events up to Tjmax, supporting robust solenoid/relay driver designs.
175°C junction ratingPermits sustained operation in automotive under-hood or industrial control cabinet environments without derating.
Lead-free constructionComplies with RoHS Directive 2011/65/EU; Pb-free plating on TO-220AB leads ensures solderability with standard reflow profiles.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: High-current step-down regulator supplying 12 V/30 A to embedded computing module from 48 V battery bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in continuous conduction mode (CCM) buck stage; switched at 100 kHz with 5 V gate drive.

Use Value: 8.0 mΩ RDS(on) limits conduction loss to 7.2 W at full load, enabling passive cooling and >94% efficiency at nominal load.

Use Scenario: H-bridge driver for 24 V, 25 A brushed motor in automated gate actuator with stall detection.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg; subjected to 100 A peak inductive turn-off during direction reversal.

Use Value: 340 mJ tested avalanche energy prevents failure during rapid deceleration-induced back-EMF spikes without snubber networks.

Industrial Power SupplyLED Constant-Current Driver

Use Scenario: Primary-side switch in 500 W AC-DC front-end with active PFC and LLC resonant secondary.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode PFC stage; operated at 65 kHz with 12 V gate drive.

Use Value: Fast switching (tr = 240 ns, tf = 83 ns) and low Qgd/Qg ratio reduce switching losses by 22% vs. legacy MOSFETs at same frequency.

Use Scenario: High-side current regulator for 48 V, 10 A LED string in outdoor signage with dimming via PWM.

IC Role / Device Role / Timing Role: Linear-mode constant-current switch modulated at 1–10 kHz; conducts continuously during ON phase.

Use Value: 175°C Tjmax and 1.14 °C/W RθJC allow stable 10 A operation with minimal heatsink volume in thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP75NF75VDSS = 75 V, RDS(on) = 10.5 mΩ @ 10 V, Qg = 120 nCHigher voltage rating but higher gate charge and on-resistance; slower switchingPrefer when 75 V blocking is required and gate drive strength exceeds 1 A peak.
IRF1404VDSS = 40 V, RDS(on) = 4.8 mΩ @ 10 V, VGS(th) = 2.0–4.0 VLower voltage rating, lower RDS(on), but non-logic-level gate; requires ≥10 V driveSelect only if system rail ≤36 V and dedicated 12 V gate supply is available.

Compared with STP75NF75 and IRF1404, IRL3705Z offers optimal balance of logic-level drivability, 55 V rating, and 8.0 mΩ conduction loss-making it preferred for 48 V industrial loads where gate drive simplicity and thermal efficiency are jointly critical.

Availability

IRL3705Z is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, industrial power supplies, and LED constant-current drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL3705Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL3705Z belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage switching applications where gate drive simplicity and thermal robustness are essential-particularly in battery-powered and space-constrained power systems.

FAQ

Is IRL3705Z suitable for 5 V microcontroller direct drive?

Yes. With VGS(th) spanning 1.0–3.0 V and full enhancement achieved at VGS = 4.5 V (RDS(on) ≤ 11 mΩ), the IRL3705Z interfaces directly with 5 V GPIO without level-shifting. Verified test data shows 75 A conduction capability at 5 V gate bias in pulsed conditions, confirming robust logic-level operation.

What is the maximum continuous current at 100°C case temperature?

At TC = 100°C, the continuous drain current is derated to 61 A (per Absolute Maximum Ratings table). This value reflects silicon-limited current handling under thermal equilibrium and assumes proper heatsinking with RθJC = 1.14 °C/W and ambient interface resistance ≤0.5 °C/W.

Does IRL3705Z have avalanche energy rating for repetitive operation?

Yes. The datasheet specifies "Repetitive Avalanche Allowed up to Tjmax" and provides curves for EAR (repetitive avalanche energy) in Figure 16. At Tj = 25°C start, EAR = 120 mJ at 1% duty cycle; this is validated through standardized unclamped inductive switching tests per JEDEC JESD24-11.

Can IRL3705Z replace IRL3713 in an existing PCB layout?

No. Although both are TO-220AB logic-level MOSFETs, IRL3713 has RDS(on) = 3.0 mΩ and higher Qg (71 nC), resulting in different gate drive dynamics and thermal dissipation. Layout reuse is not recommended without verifying gate loop inductance, snubber requirements, and thermal margin under identical operating conditions.

IRL3705Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 52A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
2880 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
130W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL3705Z FAQ

1.How can I place an order for IRL3705Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3705Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3705Z reliable?

The price and inventory of IRL3705Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705Z is usually 5 days.

3.What payment methods are accepted for IRL3705Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3705Z?

IRL3705Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3705Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3705Z?

For technical support, including IRL3705Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705Z requirements.

6.How does Aetrix verify that IRL3705Z is sourced from the original manufacturer or authorized distributors?

All IRL3705Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705Z meets industry standards.

7.What is the process for return or replacement of IRL3705Z?

All IRL3705Z units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3705Z part is unused and in its original packaging.

Return procedure for IRL3705Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL3705Z Tags

  • IRL3705Z
  • IRL3705Z PDF
  • IRL3705Z Datasheet
  • IRL3705Z Specifications
  • IRL3705Z Images
  • Infineon Technologies
  • Infineon Technologies IRL3705Z
  • Buy IRL3705Z
  • IRL3705Z Price
  • IRL3705Z Distributor
  • IRL3705Z Supplier
  • IRL3705Z Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER