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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3705ZL

Name: IRL3705ZL
Brand: Infineon Technologies
SKU: IRL3705ZL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3705ZL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL3705ZL.pdf

Description:: MOSFET N-CH 55V 75A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:8,745

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Product details

Overview

IRL3705ZL from Infineon Technologies is an N-channel logic-level HEXFET® Power MOSFET in TO-262 (I²PAK) package, rated for 55V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 4.5V, and 75A continuous drain current at T_C = 25°C. It integrates a robust body diode with 1.3V V_SD, supports repetitive avalanche up to T_Jmax = 175°C, and delivers fast switching (t_r = 240 ns, t_f = 83 ns) for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL3705ZL datasheet, IRL3705ZL pinout, IRL3705ZL application, or IRL3705ZL equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–3.0V), low R_DS(on) at 4.5V, 175°C junction rating, and validated unclamped inductive avalanche performance under real-world load dump conditions.

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining ruggedness. Its gate charge profile (Q_g = 40–60 nC, Q_gd = 21 nC) enables efficient PWM control in synchronous buck stages operating at 100–500 kHz, with C_iss = 2880 pF and C_oss = 420 pF defining high-frequency input/output impedance behavior.

The device features a thermally optimized TO-262 package with R_θJC = 1.14°C/W and R_θCS = 0.50°C/W, enabling direct heatsink mounting without insulating pads. Its body diode exhibits t_rr = 16–24 ns and Q_rr = 7.4–11 nC, supporting zero-voltage switching (ZVS) transitions in resonant topologies when paired with appropriate gate drive timing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operation in 48V bus systems with transient margin.
R_DS(on) @ V_GS = 4.5V	8.0 mΩ - Confirmed on-resistance at logic-level gate drive; enables <1.5W conduction loss at 43A in motor phase legs.
I_D Continuous @ T_C = 25°C	75 A - Silicon-limited current handling; requires ≥100 cm² heatsink with thermal interface for sustained operation.
Q_g Total Gate Charge	40–60 nC - Determines required gate driver peak current (e.g., 2A for 30 ns rise time); impacts switching loss trade-off.
T_J Operating Range	−55°C to +175°C - Enables deployment in under-hood automotive or industrial ambient environments without derating.
V_GS(th)	1.0–3.0 V - Guaranteed turn-on with 3.3V microcontroller GPIO; eliminates need for level-shifting gate drivers.
E_AS Single-Pulse Avalanche	340 mJ - Validated energy absorption capability during inductive load interruption; supports fault-tolerant design.

Pinout & Package

IRL3705ZL uses the TO-262 (I²PAK) surface-mount-compatible package with isolated tab. The case serves as the Drain terminal, enabling low-inductance PCB layout for high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system ground reference permits.
Source	Power return path / reference node for gate drive	Low-inductance connection critical for stable switching; ties directly to power ground plane.
Gate	Control input for channel conduction	High-impedance CMOS-compatible node; requires RC snubber (e.g., 10Ω + 100pF) to suppress ringing during fast transitions.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5V, eliminating external level shifters in 3.3V/5V MCU-controlled power stages.
Ultra-low R_DS(on)	8.0 mΩ at 4.5V ensures <1.5W conduction loss at 43A, reducing thermal stress in compact motor controllers.
Repetitive avalanche rating	Validated E_AR = 120 mJ at 1% duty cycle enables reliable operation during short-circuit events without immediate failure.
175°C junction rating	Supports extended lifetime in sealed enclosures or high-ambient environments where forced air cooling is unavailable.
Fast body diode recovery	t_rr = 16–24 ns and Q_rr = 7.4–11 nC minimize reverse recovery losses in synchronous rectification applications.

Applications

Brushless DC Motor Drive

48V DC-DC Synchronous Buck Converter

Use Scenario: Three-phase inverter stage driving 500W BLDC fan in HVAC system with space-constrained PCB layout.

IC Role / Device Role: Low-side switch in six-step commutation; conducts 43A peak phase current with 100 kHz PWM.

Use Value: 8.0 mΩ R_DS(on) at 4.5V reduces conduction loss by 35% vs. standard 12V-gate MOSFETs, lowering heatsink mass by 40%.

Use Scenario: Primary-side high-current switch in 48V-to-12V telecom power supply delivering 60A output.

IC Role / Device Role: High-efficiency synchronous rectifier replacement for Schottky diode in secondary-side synchronous rectification.

Use Value: Body diode V_SD = 1.3V and Q_rr = 7.4 nC cut reverse recovery loss by 60% versus 45V Schottky, improving full-load efficiency to 94.2%.

Automotive Load Dump Protection

Industrial Solid-State Relay Replacement

Use Scenario: Clamping switch in 24V vehicle battery protection circuit subjected to ISO 7637-2 Pulse 5a (120V/100ms) transients.

IC Role / Device Role: Active crowbar device triggered during overvoltage; absorbs energy via controlled avalanche.

Use Value: 340 mJ single-pulse E_AS and 175°C T_J rating allow safe clamping without external TVS, reducing BOM count by one component.

Use Scenario: Replacement for electromechanical relay in programmable logic controller (PLC) output module switching 24V/5A solenoid loads.

IC Role / Device Role: Solid-state power switch with integrated flyback diode; driven directly from FPGA I/O bank.

Use Value: Logic-level V_GS(th) = 1.0–3.0V enables direct FPGA GPIO control; 75A surge rating handles 10× inrush current of inductive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 10.5 mΩ @ 4.5V; V_DSS = 75V; TO-220 package; higher gate charge (Q_g = 120 nC)	Higher voltage rating suits 60V systems but sacrifices conduction efficiency at 48V; slower switching increases loss above 200 kHz.	Select when 75V blocking is mandatory and gate drive strength exceeds 2A peak; avoid in compact 48V converters targeting >93% efficiency.
IRF1405Z	R_DS(on) = 5.3 mΩ @ 10V only; V_GS(th) = 2.0–4.0V; requires 10V gate drive for full enhancement; TO-220AB package	Not logic-level compatible-requires dedicated gate driver; superior R_DS(on) only realized with 10V drive, increasing system complexity.	Choose only if 10V gate infrastructure exists and sub-6 mΩ on-resistance justifies added driver cost and board space.

Compared with STP75NF75 and IRF1405Z, IRL3705ZL uniquely balances logic-level drive, 55V rating optimized for 48V architectures, and 8.0 mΩ on-resistance-making it the most efficient drop-in solution for space-constrained, microcontroller-driven power stages requiring no external level shifting.

Availability

IRL3705ZL is available at Aetrix Electronics and suitable for brushless DC motor drives, 48V DC-DC synchronous buck converters, and automotive load dump protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRL3705ZL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

The IRL3705ZL belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-current, low-voltage switching applications where gate drive simplicity, thermal robustness, and avalanche reliability are critical-such as motor control, power supplies, and solid-state relays.

FAQ

What is the maximum continuous drain current for IRL3705ZL at 100°C case temperature?

The maximum continuous drain current for IRL3705ZL at T_C = 100°C is 43A, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and assumes proper heatsinking with R_θCS ≤ 0.50°C/W.

Does IRL3705ZL have a built-in body diode, and what are its key parameters?

Yes, IRL3705ZL integrates a monolithic body diode with V_SD = 1.3V at I_S = 52A and reverse recovery characteristics of t_rr = 16–24 ns and Q_rr = 7.4–11 nC at T_J = 25°C. These values are measured under standardized conditions (V_DD = 28V, I_F = 43A, di/dt = 100A/µs) and enable use in synchronous rectification without external diodes.

Can IRL3705ZL be used in avalanche mode, and what is its rated energy?

Yes, IRL3705ZL is rated for repetitive avalanche operation up to T_Jmax = 175°C, with E_AS = 340 mJ (single-pulse, thermally limited) and E_AR = 120 mJ (repetitive, 1% duty cycle). These values are validated per JEDEC JESD24-11 test methods and require strict thermal management to prevent junction overheating during repeated events.

What is the gate threshold voltage range, and how does it affect microcontroller compatibility?

The gate threshold voltage V_GS(th) for IRL3705ZL is 1.0–3.0V at I_D = 250 µA, guaranteeing full enhancement with standard 3.3V or 5V logic outputs. This allows direct connection to MCU GPIO pins without level-shifting circuitry, simplifying design and reducing component count in battery-powered and embedded systems.

IRL3705ZL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL3705ZL FAQ

1.How can I place an order for IRL3705ZL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3705ZL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3705ZL reliable?

The price and inventory of IRL3705ZL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705ZL is usually 5 days.

3.What payment methods are accepted for IRL3705ZL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705ZL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3705ZL?

IRL3705ZL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3705ZL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3705ZL?

For technical support, including IRL3705ZL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705ZL requirements.

6.How does Aetrix verify that IRL3705ZL is sourced from the original manufacturer or authorized distributors?

All IRL3705ZL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705ZL meets industry standards.

7.What is the process for return or replacement of IRL3705ZL?

All IRL3705ZL units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705ZL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3705ZL part is unused and in its original packaging.

Return procedure for IRL3705ZL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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