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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3705ZSTRLPBF

Name: IRL3705ZSTRLPBF
Brand: Infineon Technologies
SKU: IRL3705ZSTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3705ZSTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3705ZSTRLPBF.pdf

Description:: MOSFET N-CH 55V 75A D2PAK

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Product details

Overview

IRL3705ZSTRLPBF from Infineon Technologies is an N-channel logic-level HEXFET® Power MOSFET in D²PAK (TO-263) package, rated for 55 V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 10 V, and 75 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_r = 240 ns, t_f = 83 ns), and rated repetitive avalanche energy up to 180 mJ - optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL3705ZSTRLPBF datasheet, IRL3705ZSTRLPBF pinout, IRL3705ZSTRLPBF application, or IRL3705ZSTRLPBF equivalent, key selection criteria include its low gate threshold (1.0–3.0 V), ultra-low on-resistance per silicon area, body diode reverse recovery charge (Q_rr = 7.4–11 nC), and thermal resistance R_θJC = 1.14°C/W - critical for thermally constrained high-current switching designs.

Technical Context

This device employs advanced planar HEXFET processing to minimize R_DS(on) while maintaining robust avalanche capability. Its logic-level gate drive (V_GS(th) ≤ 3.0 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The integrated body diode exhibits low forward voltage (V_SD ≤ 1.3 V at I_S = 52 A) and fast reverse recovery (t_rr = 16–24 ns, Q_rr = 7.4–11 nC), supporting synchronous rectification and bidirectional current handling in H-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; supports 48 V bus systems with margin.
R_DS(on) @ V_GS = 10 V	8.0 mΩ max - Enables <1 W conduction loss at 35 A, reducing heatsink requirements.
I_D @ T_C = 25°C	75 A - Continuous current capability under ideal heatsinking; limited to 61 A at 100°C case temp.
Q_g	40–60 nC - Gate charge determines driver strength needed; compatible with standard 1–2 A peak gate drivers.
t_r/t_f	240 ns / 83 ns - Fast edge rates support >100 kHz switching in SMPS without excessive EMI penalties.
E_AS (tested)	340 mJ - Single-pulse avalanche energy rating confirms ruggedness during inductive turn-off transients.
T_J max	175°C - High junction temperature rating allows operation in sealed enclosures or high ambient environments.

Pinout & Package

IRL3705ZSTRLPBF is housed in a surface-mount D²PAK (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, low-thermal-resistance path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal (high-side or low-side switch node)	Electrically connected to heatsink; requires isolation if heatsink is grounded; contributes <4.5 nH internal inductance.
Source (Pins 1 & 2)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance (<7.5 nH); critical for minimizing gate oscillation and shoot-through risk.
Gate (Pin 3)	Control input for channel conduction	Logic-level compatible (V_GS(th) ≤ 3.0 V); requires <60 nC total charge for full enhancement.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	8.0 mΩ @ 10 V - Reduces I²R losses by >30% vs. legacy 55 V MOSFETs in same package, improving efficiency in 12–48 V systems.
Logic-level gate drive	V_GS(th) = 1.0–3.0 V - Eliminates need for gate driver ICs in microcontroller-driven loads like fans, solenoids, and LED arrays.
Repetitive avalanche rated	E_AR = 120 mJ @ T_J = 175°C - Enables reliable operation in unclamped inductive switching (e.g., relay coils, stepper motors) without external snubbers.
High-temperature operation	T_J = –55°C to +175°C - Supports automotive under-hood, industrial motor control, and outdoor power equipment applications.
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - Compatible with standard Pb-free SMT assembly processes without derating.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-current step-down regulator supplying 5–12 V to FPGA or ASIC core rails from 24–48 V input.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz with 50% duty cycle.

Use Value: 8.0 mΩ R_DS(on) limits conduction loss to <1.1 W at 16.5 A, enabling compact thermal design without forced air cooling.

Use Scenario: Full-bridge driver for 24 V, 30 A brushed DC motors in automated gate actuators and conveyor systems.

IC Role / Device Role / Timing Role: High-current quadrant switch with body-diode freewheeling during PWM off-time.

Use Value: Fast t_rr (16–24 ns) and low Q_rr (7.4–11 nC) suppress voltage spikes during commutation, reducing snubber size and EMI filtering cost.

LED Constant-Current Driver

Hot-Swap Controller

Use Scenario: High-power LED string driver for architectural lighting, delivering 5–10 A at 36 V with analog/PWM dimming.

IC Role / Device Role / Timing Role: Low-side current-sense and switching element in constant-current feedback loop.

Use Value: Tight R_DS(on) tolerance (typ. 6.5 mΩ) ensures stable current regulation across temperature, minimizing LED brightness drift.

Use Scenario: Inrush current limiter for 48 V backplane hot-swap modules in telecom and server racks.

IC Role / Device Role / Timing Role: Linear-mode active pass element during soft-start, transitioning to low-R_DS(on) conduction after ramp completion.

Use Value: 175°C T_J rating and 1.14°C/W R_θJC allow safe linear-mode operation up to 2.5 A for 100 ms without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3705ZPBF	Same die, TO-220AB package; R_θJA = 62°C/W (vs. 40–55°C/W for D²PAK on PCB); no exposed drain tab.	Better suited for prototyping or low-volume through-hole assembly; higher thermal resistance limits sustained >40 A operation.	Select when mechanical mounting constraints favor through-hole or when heatsink interface is non-planar.
STP75NF55	55 V, 75 A, R_DS(on) = 10.5 mΩ; gate threshold 2.0–4.0 V; lower Q_g (42 nC) but slower t_f (120 ns).	Higher V_GS(th) may require gate boosting in 3.3 V systems; slower fall time increases switching loss above 150 kHz.	Prefer for cost-sensitive 50–100 kHz applications where gate drive voltage ≥ 5 V is guaranteed.

Compared with IRL3705ZSTRLPBF, IRF3705ZPBF trades thermal performance for mechanical flexibility, while STP75NF55 offers lower gate charge but sacrifices switching speed and logic-level compatibility - making IRL3705ZSTRLPBF optimal for high-frequency, low-voltage-gate, high-reliability surface-mount designs.

Availability

IRL3705ZSTRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and hot-swap controllers requiring stable component supply and long-term industrial availability.

Supply support for IRL3705ZSTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices since 1999.

The IRL3705Z series belongs to Infineon's logic-level HEXFET® portfolio, engineered specifically for efficient, gate-friendly switching in battery-powered, microcontroller-driven, and space-constrained power systems.

FAQ

Is IRL3705ZSTRLPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed enhancement at V_GS = 4.5 V (R_DS(on) ≤ 11 mΩ), it fully turns on using standard 3.3 V GPIO outputs. No level shifter is required, though a 10 Ω series gate resistor is recommended to dampen ringing.

What is the maximum continuous current at 100°C case temperature?

The datasheet specifies 61 A continuous drain current at T_C = 100°C and V_GS = 10 V. This derating reflects thermal limits of the D²PAK package and assumes adequate PCB copper area (≥ 10 cm² 2 oz Cu) for heat spreading.

Does IRL3705ZSTRLPBF have avalanche energy rating for repetitive operation?

Yes. It is explicitly rated for repetitive avalanche energy (E_AR) up to 120 mJ at T_J = 175°C, validated per JEDEC JESD24-11 test conditions. Safe operation requires ensuring that single-pulse energy does not exceed E_AS = 340 mJ and that average power stays within thermal limits.

Can the body diode be used for freewheeling in H-bridge configurations?

Yes. The integral body diode has V_SD ≤ 1.3 V at 52 A and t_rr = 16–24 ns, making it suitable for freewheeling in medium-frequency H-bridges. However, for highest efficiency, external Schottky diodes are recommended when switching exceeds 200 kHz or diode conduction dominates duty cycle.

IRL3705ZSTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3705ZSTRLPBF FAQ

1.How can I place an order for IRL3705ZSTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3705ZSTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3705ZSTRLPBF reliable?

The price and inventory of IRL3705ZSTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3705ZSTRLPBF is usually 5 days.

3.What payment methods are accepted for IRL3705ZSTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3705ZSTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3705ZSTRLPBF?

IRL3705ZSTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3705ZSTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3705ZSTRLPBF?

For technical support, including IRL3705ZSTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3705ZSTRLPBF requirements.

6.How does Aetrix verify that IRL3705ZSTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL3705ZSTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3705ZSTRLPBF meets industry standards.

7.What is the process for return or replacement of IRL3705ZSTRLPBF?

All IRL3705ZSTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3705ZSTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3705ZSTRLPBF part is unused and in its original packaging.

Return procedure for IRL3705ZSTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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