Infineon Technologies IRL3713PBF

Overview

IRL3713PBF from Infineon Technologies is a 30V, 260A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification and buck converter primary-side switching with R_DS(on) = 3.0 mΩ at V_GS = 10 V and ultra-low gate charge (Q_g = 75–110 nC). It delivers stable performance in telecom DC-DC modules and CPU VRMs.

For engineers reviewing the IRL3713PBF datasheet, IRL3713PBF pinout, IRL3713PBF application, or IRL3713PBF equivalent, key selection criteria include its 3.0 mΩ R_DS(on) at 10 V, 1040 A pulsed drain current capability, fully characterized avalanche rating (E_AS = 1530 mJ), and lead-free TO-220AB thermal resistance (R_θJC = 0.45 °C/W).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted source contact design to minimize conduction and switching losses. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) enables robust 4.5 V logic-level drive compatibility while maintaining low leakage (I_DSS ≤ 250 µA at 30 V).

Dynamic parameters are characterized under standardized conditions: Q_gd = 37 nC, C_iss = 5890 pF, and t_r/t_f = 160/57 ns at V_DD = 15 V, I_D = 30 A, R_G = 1.8 Ω - confirming suitability for >500 kHz hard-switched topologies.

Key Specifications

Pinout & Package

IRL3713PBF uses the standard TO-220AB package: 3-pin, through-hole, isolated tab (drain-connected), with 0.45 °C/W typical junction-to-case thermal resistance. Mounting requires mechanical isolation unless drain is referenced to chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) power MOSFET applications.

Compared with IRL3713PBF, IRL3803PBF trades 0.3 mΩ higher R_DS(on) for 13–48 nC lower Q_g, favoring high-frequency efficiency; STP30NF20 sacrifices 7× on-resistance for 6.7× higher voltage rating, limiting use to non-VRM, medium-power industrial controls.

Availability

IRL3713PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, CPU voltage regulator modules, and industrial motor drives requiring stable component supply, long-lifecycle availability, and traceable RoHS-compliant sourcing.

Supply support for IRL3713PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFET and GaN device innovation.

The IRL37xx family targets high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power systems - designed specifically for synchronous rectification and multiphase buck regulation where low R_DS(on) and robust avalanche capability are critical.

FAQ

Is IRL3713PBF suitable for 48 V input buck converters?

Yes. With a 30 V V_DS rating and 260 A continuous current capability, IRL3713PBF is rated for use in 48 V nominal input systems only when operated within safe SOA limits - typically in two-stage conversion (e.g., 48 V → 12 V → 1.2 V) or with sufficient voltage derating and transient clamping. Its R_DS(on) and thermal resistance make it ideal for the second stage.

What is the maximum recommended gate resistor value for IRL3713PBF?

The datasheet specifies R_G = 1.8 Ω for switching characterization. For hard-switched applications up to 500 kHz, R_G should remain ≤ 3.4 Ω (max specified gate resistance) to ensure controlled dV/dt and avoid oscillation. Higher values increase switching time and losses; lower values risk gate driver overstress and EMI.

Does IRL3713PBF have an integrated body diode suitable for synchronous rectification?

Yes. It features a fast, fully characterized intrinsic body diode with t_rr = 75–120 ns and Q_rr = 140–240 nC at T_J = 125°C, IS = 30 A. This allows reliable synchronous rectification in buck and forward converters without external diode replacement, provided gate timing avoids shoot-through.

How does the 0.45 °C/W R_θJC value impact heatsink selection?

This value reflects junction-to-case thermal resistance measured under end-of-life conditions after 1000 thermal cycles. It means that with a 100 W power dissipation, the junction-to-case temperature rise is 45°C - so heatsink thermal resistance must be sized to keep case temperature ≤ 85°C for 125°C max T_J. Direct mounting with thermal grease is mandatory; insulating pads increase R_θJC by ≥0.15 °C/W.