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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3713SPBF

Name: IRL3713SPBF
Brand: Infineon Technologies
SKU: IRL3713SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3713SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3713SPBF.pdf

Description:: MOSFET N-CH 30V 260A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,068

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Product details

Overview

IRL3713SPBF from Infineon Technologies is a 30V, 260A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous rectification and buck converter applications with R_DS(on) = 3.0 mΩ at V_GS = 10 V and 4.0 mΩ at V_GS = 4.5 V. It features ultra-low gate impedance (R_G = 0.5–3.4 Ω), fully characterized avalanche capability (E_AS = 1530 mJ), and 100% R_G-tested production.

For engineers reviewing the IRL3713SPBF datasheet, IRL3713SPBF pinout, IRL3713SPBF application, or IRL3713SPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V logic-level operation), thermal resistance (R_θJC = 0.45 °C/W), body diode recovery performance (Q_rr = 140–210 nC), and SOA robustness for telecom DC-DC and CPU power delivery.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted charge balancing to achieve sub-3.5 mΩ on-resistance at 10 V gate drive while maintaining fast switching (t_r = 160 ns, t_f = 57 ns) and low Q_gd/Q_gs ratio (37/24 nC). Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) ensures reliable turn-on with standard 3.3 V or 5 V controllers.

The integrated body diode is characterized for reverse recovery (t_rr = 75–110 ns, Q_rr = 140–210 nC) under realistic conditions (T_J = 125 °C, I_F = 30 A, dI/dt = 100 A/μs), enabling stable synchronous rectification without external Schottky supplementation in isolated 48 V input telecom supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage compatible with 24 V bus systems and 48 V telecom inputs with margin.
R_DS(on) @ 10 V	3.0 mΩ - Enables <1.5 W conduction loss at 200 A DC, critical for high-current CPU VRMs.
R_DS(on) @ 4.5 V	4.0 mΩ - Supports direct drive from 3.3 V/5 V PWM controllers without gate boosters.
Q_g	75–110 nC - Low total gate charge reduces driver power and enables >500 kHz switching in buck converters.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance allows 260 A continuous current with ≤100 °C case temperature rise.
E_AS	1530 mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in hard-switched topologies.
Q_rr	140–210 nC - Reverse recovery charge determines synchronous rectifier losses and EMI in high-dI/dt phases.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for low-inductance, high-current PCB mounting and enhanced thermal transfer to heatsink or copper plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connected to ground or output rail in buck/synchronous rectifier configurations.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <110 nC charge; sensitive to ESD and layout parasitics.
Pin 3 (Drain)	Power input/output (D)	Exposed metal tab - electrically tied to drain; must be isolated from heatsink unless drain-referenced cooling is intended.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.0 mΩ enables direct logic-level drive in server VRMs without gate drivers.
Fully characterized avalanche	1530 mJ single-pulse rating validated per JEDEC JESD24-11, supporting rugged hard-switched designs.
100% R_G tested	Guarantees gate resistance between 0.5–3.4 Ω, ensuring consistent switching speed and driver loading.
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 and EU RoHS Directive 2011/65/EU.
Optimized body diode	Q_rr = 140–210 nC and t_rr = 75–110 ns support efficient synchronous rectification in 48 V–12 V isolated DC-DC.

Applications

Telecom DC-DC Converters

Server CPU Voltage Regulators

Use Scenario: Isolated 48 V to 12 V step-down converter in telecom power shelves using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes on secondary side to reduce conduction loss and improve efficiency above 92%.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V enables full utilization of controller's low-side gate drive, cutting rectifier losses by >40% vs. 40 V Schottky.

Use Scenario: Multiphase buck converter delivering up to 200 A to modern x86 processors in cloud data center servers.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) high-side switch operating at 300–600 kHz with tight dead-time control.

Use Value: 3.0 mΩ on-resistance at 10 V minimizes I²R loss during high-current pulses, reducing thermal stress on 6-layer PCBs.

Industrial Motor Drives

EV Onboard Chargers

Use Scenario: Half-bridge inverter stage for 3 kW BLDC motor drives in factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter, commutated at 10–20 kHz with bootstrap gate drive.

Use Value: Robust avalanche rating (1530 mJ) withstands inductive kickback during short-circuit events without failure.

Use Scenario: Primary-side switching MOSFET in 6.6 kW AC/DC PFC + LLC resonant stage for EV onboard chargers.

IC Role / Device Role / Timing Role: High-efficiency, high-current switch in interleaved PFC boost stage operating at 65–100 kHz.

Use Value: Low Q_g (75–110 nC) and Q_gd/Q_gs ratio reduce switching losses and EMI generation in high-power PFC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF (TO-220AB)	Same die, but TO-220 through-hole package with higher R_θJC = 0.50 °C/W and no exposed drain pad.	Limited to lower-power (<150 A) or prototyping use due to inferior thermal performance and manual assembly requirement.	Select when board space permits through-hole mounting and thermal budget allows ~15% higher junction temperature rise.
IRL3713LPbF (TO-262)	Identical die in TO-262 package; R_θJC = 0.50 °C/W, same pinout as D2PAK but non-isolated leadframe.	Suitable for automated through-hole reflow but lacks D2PAK's thermal pad; requires careful heatsink isolation design.	Prefer for legacy wave-solder processes where D2PAK reflow profile is unavailable or board stack-up prohibits exposed pad routing.

Compared with IRL3713PbF and IRL3713LPbF, the IRL3713SPBF delivers superior thermal performance (0.45 vs. 0.50 °C/W), lower profile, and optimized PCB thermal coupling-making it the preferred choice for high-density, high-current power stages where thermal management is critical.

Availability

IRL3713SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL3713SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFETs and wide-bandgap devices.

The IRL3713SPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in telecom, computing, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRL3713SPBF at 100°C case temperature?

The maximum continuous drain current (I_D) at T_C = 100°C is 180 A, derated linearly from 260 A at 25°C using the specified 3.3 W/°C derating factor. This value assumes proper PCB copper area and thermal interface to maintain case temperature at or below 100°C under steady-state operation.

Does IRL3713SPBF support 3.3 V gate drive in practical applications?

Yes - with V_GS(th) = 1.0–2.5 V and R_DS(on) = 4.0 mΩ at V_GS = 4.5 V, the device turns on robustly with 3.3 V logic drivers. However, full 260 A conduction requires ≥4.5 V to achieve rated R_DS(on); at 3.3 V, R_DS(on) rises to ~5.2 mΩ (typical), increasing conduction loss by ~30%.

How is the avalanche rating verified for IRL3713SPBF?

The 1530 mJ single-pulse avalanche energy (E_AS) is measured per JEDEC JESD24-11 using unclamped inductive switching test circuits at T_J = 25°C. Each production lot undergoes statistical sampling for avalanche robustness, and the rating accounts for worst-case V_DS, I_AS, and pulse width combinations defined in the datasheet Figure 12a–c.

Can IRL3713SPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing stability. For parallel operation, match gate drive loop inductance and use individual gate resistors (≥1.8 Ω recommended) to suppress oscillation; PCB layout must ensure symmetrical thermal paths to avoid thermal runaway.

IRL3713SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 260A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5890 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3713SPBF FAQ

1.How can I place an order for IRL3713SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3713SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3713SPBF reliable?

The price and inventory of IRL3713SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3713SPBF is usually 5 days.

3.What payment methods are accepted for IRL3713SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3713SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3713SPBF?

IRL3713SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3713SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3713SPBF?

For technical support, including IRL3713SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3713SPBF requirements.

6.How does Aetrix verify that IRL3713SPBF is sourced from the original manufacturer or authorized distributors?

All IRL3713SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3713SPBF meets industry standards.

7.What is the process for return or replacement of IRL3713SPBF?

All IRL3713SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3713SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3713SPBF part is unused and in its original packaging.

Return procedure for IRL3713SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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