Infineon Technologies IRL3713STRLPBF

Overview

IRL3713STRLPBF from Infineon Technologies is a 30V, 260A N-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck converters for CPU power delivery. It delivers 3.0 mΩ R_DS(on) at V_GS = 10 V, 100% R_G tested, and features ultra-low gate impedance with 75 nC total gate charge.

For engineers reviewing the IRL3713STRLPBF datasheet, IRL3713STRLPBF pinout, IRL3713STRLPBF application, or IRL3713STRLPBF equivalent, key selection criteria include its 3.0 mΩ on-resistance at 10 V drive, 260 A continuous drain current capability at T_C = 25°C, fully characterized avalanche rating (1530 mJ), lead-free D2PAK tape-and-reel packaging, and validated performance in telecom/industrial SMPS designs.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (1.0–2.5 V) enables reliable 4.5 V logic-level drive compatibility.

Thermal design is supported by a measured junction-to-case thermal resistance of 0.45°C/W (end-of-life after 1000 thermal cycles), and its output capacitance profile (C_oss = 3130 pF at V_DS = 15 V) is tailored for zero-voltage switching (ZVS) operation in resonant topologies.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IRL3713PbF and IRL3713LPbF, the IRL3713STRLPBF offers superior thermal management via D2PAK's exposed drain pad and optimized PCB copper area coupling-critical for sustained 260 A operation-and is supplied in industry-standard 800-unit tape-and-reel format for high-volume SMT production.

Availability

IRL3713STRLPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drive inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for IRL3713STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL3713 series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current synchronous rectification and DC-DC conversion in telecom, computing, and industrial power supplies.

FAQ

Is IRL3713STRLPBF suitable for 4.5 V gate drive?

Yes. The device has a gate threshold voltage range of 1.0–2.5 V and achieves 4.0 mΩ R_DS(on) at V_GS = 4.5 V, making it fully compatible with 5 V and 3.3 V logic-level drivers without external level shifting. This is confirmed in the datasheet's transfer characteristics (Fig. 3) and R_DS(on) vs. V_GS curves.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 170 A, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating based on the 0.45°C/W R_θJC and 175°C maximum junction temperature, ensuring safe operation under sustained high-temperature conditions.

Does IRL3713STRLPBF include an integrated body diode?

Yes. It integrates a fast, low-Q_rr intrinsic body diode with reverse recovery charge of 140–240 nC and t_rr of 75–120 ns at T_J = 125°C and I_F = 30 A. This diode is fully characterized and rated for synchronous rectification and freewheeling applications per Fig. 7 and Table "Diode Characteristics".

How does the D2PAK package differ thermally from TO-220 and TO-262 variants?

The D2PAK (IRL3713STRLPBF) offers a lower end-of-life R_θJC of 0.45°C/W versus 0.50°C/W for TO-220 (IRL3713PbF) and TO-262 (IRL3713LPbF), due to enhanced die attach integrity and larger copper tab area. Its exposed drain pad enables direct thermal coupling to PCB copper planes, delivering up to 25% better steady-state thermal performance in production layouts.