Infineon Technologies IRL3713STRRPBF

Overview

IRL3713STRRPBF from Infineon Technologies is a 30V N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency synchronous rectification and buck converter applications. It delivers 260A continuous drain current at TC = 25°C, RDS(on) of 2.6 mΩ at VGS = 10V and 3.0 mΩ at VGS = 4.5V, with fully characterized avalanche capability and 100% RG tested gate resistance.

For engineers reviewing the IRL3713STRRPBF datasheet, IRL3713STRRPBF pinout, IRL3713STRRPBF application, or IRL3713STRRPBF equivalent, key selection criteria include low RDS(on) at 4.5V logic-level drive, ultra-low gate impedance (RG = 0.5–3.4 Ω), fast switching (Qg = 75–110 nC), robust unclamped inductive avalanche rating (EAS = 1530 mJ), and thermal performance validated across 1000 temperature cycles.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell layout to achieve ultra-low on-resistance and high current density. Its gate structure minimizes Miller charge (Qgd = 37 nC) and total gate charge (Qg = 75–110 nC), enabling efficient operation in hard-switched DC-DC topologies up to several hundred kHz.

The integrated body diode exhibits fast reverse recovery (trr = 75–120 ns, Qrr = 140–240 nC) and low forward voltage (VSD ≈ 0.8–1.3 V at IS = 30A), supporting synchronous rectification without external Schottky diodes. Thermal design is supported by validated junction-to-case resistance (RθJC = 0.45°C/W typical, 0.50°C/W end-of-life).

Key Specifications

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three-terminal configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the die backside and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3713SPbF and IRL3713LPbF, the IRL3713STRRPBF offers superior thermal performance (0.45°C/W vs. 0.50°C/W), highest power density, and optimized surface-mount manufacturability-making it the preferred choice for high-volume, thermally demanding, automated SMT production.

Availability

IRL3713STRRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRL3713STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL3713 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRL3713STRRPBF at 100°C case temperature?

The maximum continuous drain current ID @ TC = 100°C is 170 A, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, and must be applied with appropriate heatsinking to maintain junction temperature below 175°C.

Does IRL3713STRRPBF support logic-level gate drive at 3.3V?

No. The gate threshold voltage VGS(th) ranges from 1.0 V to 2.5 V, but RDS(on) is not guaranteed at 3.3V. The datasheet specifies RDS(on) only at VGS = 4.5V (3.0 mΩ max) and VGS = 10V (2.6 mΩ max). At 3.3V, the device operates in weak inversion with significantly higher on-resistance and unpredictable conduction, risking thermal runaway under load.

How is the "100% RG tested" specification verified in production?

Each unit undergoes inline gate resistance measurement during final test using Kelvin-probe contact to eliminate lead and bondwire resistance. RG is measured between gate and source terminals at DC with 1 mA bias, ensuring values fall within the 0.5–3.4 Ω range. This screening prevents units with gate oxide defects or interconnect anomalies from reaching shipment.

Can IRL3713STRRPBF be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Parallel operation requires identical gate trace lengths, individual gate resistors (≤1 Ω), and Kelvin-source connections to ensure current sharing. Thermal coupling via shared heatsink is essential; mismatched RDS(on) temperature coefficients (positive) help stabilize sharing, but dynamic imbalance from Qgd variation remains a risk above 500 kHz.