Infineon Technologies IRL3714PBF

Overview

IRL3714PBF from Infineon Technologies is a 20 V, 36 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 20 mΩ R_DS(on) at V_GS = 10 V and 28 mΩ at V_GS = 4.5 V, with ultra-low gate charge (Q_g = 9.7 nC) and fast switching (t_f = 4.5 ns), enabling high-efficiency power conversion in telecom and processor VRM applications.

For engineers reviewing the IRL3714PBF datasheet, IRL3714PBF pinout, IRL3714PBF application, or IRL3714PBF equivalent, key selection criteria include its 20 V V_DS, 20 mΩ R_DS(on) @ 10 V, 9.7 nC total gate charge, 140 A pulsed drain current capability, and validated avalanche energy rating of 72 mJ - all critical for synchronous rectifier and low-voltage, high-current switch design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve low R_DS(on) while maintaining robust avalanche ruggedness. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 3.0 V, enabling reliable turn-on with 4.5 V logic-level drive, and its body diode exhibits t_rr = 35–53 ns and Q_rr = 34–53 nC under standardized conditions.

The device features a thermally enhanced TO-220AB package with dual drain leads (pins 2 and 4) for reduced source inductance and improved current sharing. Junction-to-case thermal resistance is 3.2 °C/W, supporting high-power operation up to 47 W at T_C = 25 °C, with linear derating of 0.31 W/°C above that temperature.

Key Specifications

Pinout & Package

IRL3714PBF uses the JEDEC-standard TO-220AB package with four leads: two parallel drain connections (pins 2 and 4), one gate (pin 1), and one source (pin 3). The dual-drain configuration lowers parasitic inductance and improves current handling in high-di/dt applications such as synchronous rectifiers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3714PBF, IRL3803PBF trades higher voltage tolerance for increased R_DS(on) and gate charge, while SI4435DY-T1-GE3 offers compact packaging at the cost of current capacity and ruggedness - making IRL3714PBF optimal for high-current, high-reliability through-hole synchronous rectification.

Availability

IRL3714PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, computer processor VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRL3714PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

The IRL3714PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in low-voltage, high-current applications such as server VRMs and telecom rectifiers.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRL3714PBF supports 31 A continuous drain current at T_C = 70 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 36 A rating at 25 °C, based on a linear derating factor of 0.31 W/°C and R_θJC = 3.2 °C/W. Operation above this current requires active heatsinking or forced-air cooling.

Does the IRL3714PBF have a specified avalanche energy rating?

Yes - the IRL3714PBF is fully characterized for unclamped inductive switching and specifies a single-pulse avalanche energy (E_AS) of 72 mJ at T_J = 25 °C. This value is measured per JEDEC standard JESD24-1 and confirmed across multiple production lots, enabling reliable use in circuits subject to inductive turn-off transients without external clamping.

Can the IRL3714PBF be driven directly by a 3.3 V microcontroller GPIO?

No - while the gate threshold voltage (V_GS(th)) starts as low as 1.0 V, full enhancement to 36 A requires V_GS ≥ 4.5 V to achieve the rated 20–28 mΩ R_DS(on). A 3.3 V GPIO cannot reliably sustain low on-resistance; a dedicated gate driver or level shifter is required for optimal conduction efficiency and thermal performance.

What is the significance of pins 2 and 4 both being labeled "DRAIN" in the TO-220AB package?

Pins 2 and 4 are internally connected to the same die drain metallization, providing parallel current paths to reduce package inductance and improve thermal coupling to the heatsink. This dual-drain configuration lowers effective source inductance during high-di/dt switching, mitigating voltage spikes and improving EMI behavior in synchronous rectifier and motor drive applications.