Infineon Technologies IRL3714SPBF

Overview

IRL3714SPBF from Infineon Technologies is a 20 V, 36 A, D2PAK-packaged N-channel enhancement-mode HEXFET Power MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It features 20 mΩ R_DS(on) at V_GS = 10 V, 28 mΩ at V_GS = 4.5 V, and 72 mJ single-pulse avalanche energy - enabling robust operation in telecom and industrial power supplies.

For engineers reviewing the IRL3714SPBF datasheet, IRL3714SPBF pinout, IRL3714SPBF application, or IRL3714SPBF equivalent, key selection criteria include low gate charge (9.7 nC max), fast switching (t_r = 78 ns, t_f = 4.5 ns), ultra-low R_DS(on) at 4.5 V, body diode recovery performance (Q_rr = 51 nC), and thermal resistance R_θJC = 3.2 °C/W.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to achieve low on-resistance while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive from 3.3 V or 5 V controllers without level-shifting.

The device integrates a fully characterized intrinsic body diode with reverse recovery time (t_rr) of 35–53 ns and Q_rr of 34–53 nC across temperature, supporting high-efficiency synchronous rectification in hard-switched topologies up to several hundred kHz.

Key Specifications

Pinout & Package

IRL3714SPBF is housed in a surface-mount D2PAK (TO-263AB) package with exposed drain pad for enhanced thermal conduction. The lead assignment is standardized per JEDEC: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3714SPBF, IRL3713PBF trades conduction efficiency for faster switching, while STL220N3LLH6 sacrifices thermal robustness for miniaturization - making IRL3714SPBF optimal for thermally demanding, medium-power industrial and telecom SMPS where reliability and ruggedness are primary.

Availability

IRL3714SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRL3714SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRL37xx series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in low-voltage power conversion systems where gate drive simplicity and thermal resilience are critical.

FAQ

Is IRL3714SPBF suitable for 3.3 V gate drive?

Yes - its gate threshold voltage range (1.0–3.0 V) and guaranteed R_DS(on) of 28 mΩ at V_GS = 4.5 V confirm robust enhancement-mode operation with 3.3 V logic drivers. However, full 36 A current capability requires V_GS ≥ 4.5 V; at 3.3 V, R_DS(on) rises to ~45 mΩ (typical), limiting continuous current to ~25 A at T_C = 25°C.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, Infineon recommends a minimum 400 mm² (0.62 in²) of 2 oz copper connected directly to the exposed drain pad on the bottom layer, with ≥4 thermal vias (0.3 mm diameter) per mm² to internal ground planes. This achieves junction-to-ambient thermal resistance near 40 °C/W in standard 4-layer FR-4 layouts.

Does IRL3714SPBF have avalanche-rated capability?

Yes - it is fully characterized for unclamped inductive switching with a rated single-pulse avalanche energy (E_AS) of 72 mJ at T_J = 25°C. Test conditions follow JEDEC JESD24-11, using I_AS = 14 A and V_DD = 16 V. Derating is required above 25°C; E_AS drops to ~45 mJ at T_J = 125°C.

Can IRL3714SPBF replace IRL3714PBF in existing TO-220AB designs?

No - although electrically identical, IRL3714SPBF uses the D2PAK (TO-263AB) package with different footprint, thermal pad layout, and dual-drain pinout (Pin 2 & 4), whereas IRL3714PBF uses TO-220AB with single-drain (Pin 2 only). Mechanical redesign and requalification are required for drop-in replacement.