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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3715PBF

Name: IRL3715PBF
Brand: Infineon Technologies
SKU: IRL3715PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3715PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL3715PBF.pdf

Description:: MOSFET N-CH 20V 54A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL3715PBF from Infineon Technologies is a 20 V, 54 A, 14 mΩ N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers ultra-low R_DS(on) at 4.5 V gate drive, supports 210 A pulsed drain current, and features fully characterized avalanche capability (110 mJ E_AS) for robustness in hard-switching telecom and industrial power supplies.

For engineers reviewing the IRL3715PBF datasheet, IRL3715PBF pinout, IRL3715PBF application, or IRL3715PBF equivalent, key selection criteria include its 14 mΩ R_DS(on) @ V_GS = 4.5 V, 11 nC total gate charge, 37 ns reverse recovery time, and thermal resistance of 2.1 °C/W (junction-to-case), critical for high-efficiency, high-density SMPS design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve low on-resistance while maintaining fast switching and rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive from 3.3 V/5 V controllers without level-shifting.

The device integrates a low-Q_rr body diode (28–45 nC) with soft recovery characteristics, minimizing voltage overshoot and EMI in synchronous rectifier topologies. Thermal design is supported by a low R_θJC of 2.1 °C/W and linear derating factor of 0.48 W/°C above 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and 19 V transient surges in telecom DC-DC stages.
R_DS(on) @ V_GS = 4.5 V	15 mΩ max - Enables <100 mW conduction loss at 21 A, critical for >95% efficiency in 48 V–12 V buck converters.
I_D @ T_C = 25°C	54 A - Sustains full-load current in high-current point-of-load (POL) modules without forced cooling.
Q_g	11–17 nC - Low gate charge reduces driver power loss and allows use of compact gate drivers like IR2110 or UCC27531.
E_AS	110 mJ - Withstands single-pulse avalanche energy up to 21 A, eliminating need for external snubbers in flyback or LLC resonant converters.
t_rr	37–57 ns - Fast body diode recovery minimizes shoot-through risk and improves light-load efficiency in synchronous rectification.
R_θJC	2.1 °C/W - Enables 71 W continuous dissipation with modest heatsinking, supporting high-power density in space-constrained enclosures.

Pinout & Package

IRL3715PBF is housed in a TO-220AB package with exposed drain tab for thermal and electrical connection to heatsink. The plastic body provides creepage/clearance compliance per IPC-2221B, and lead-free (PbF) finish meets RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	High-impedance input requiring <17 nC charge for full enhancement; sensitive to ESD-must be protected with series resistor and TVS during layout.
2 – DRAIN	Main current output terminal	Internally connected to metal tab; electrically and thermally coupled to heatsink-requires isolation washer if heatsink is grounded.
3 – SOURCE	Reference node for gate drive and current sensing	Serves as return path for load current and gate driver ground; must be routed with low-inductance copper pour to minimize ringing.
4 – DRAIN	Secondary drain connection	Redundant drain terminal to reduce package inductance and improve current sharing in high-di/dt applications (>100 A/µs).

Key Features

Feature	Design Value
Ultra-low R_DS(on) @ 4.5 V	15 mΩ max ensures minimal conduction loss when driven directly from 5 V microcontrollers or PWM ICs without gate boosters.
Logic-level gate threshold	V_GS(th) = 1.0–3.0 V enables reliable turn-on with 3.3 V FPGA I/O or digital controller outputs, reducing BOM count.
Low Q_gd/Q_gs ratio	4.4 nC / 3.8 nC = ~1.16 mitigates Miller-induced false turn-on during high dv/dt switching, improving noise immunity in dense PCB layouts.
Characterized avalanche energy	110 mJ E_AS validated per JEDEC JESD24-1 allows safe operation under inductive fault conditions without derating.
Soft-recovery body diode	Q_rr = 28–45 nC with 37–57 ns t_rr reduces EMI and voltage spikes in synchronous rectifier mode, easing EMI filter design.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V–12 V isolated forward converter in 1RU telecom shelf with 500 kHz switching frequency and 40 A output.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode on secondary side, commutated by transformer reset signal.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling 94.2% peak efficiency and 15 °C lower MOSFET junction temperature at full load.

Use Scenario: Multiphase buck converter supplying 1.8 V/120 A to dual-socket Xeon server CPU with 1 MHz switching.

IC Role / Device Role / Timing Role: High-side switch in interleaved phase leg, driven by dedicated gate driver with adaptive dead-time control.

Use Value: 14 mΩ R_DS(on) limits conduction loss to 36 W per phase, allowing air-cooled operation without liquid cooling infrastructure.

Industrial PLC Power Supplies

Medical Imaging DC-DC Modules

Use Scenario: 24 V input, 5 V/20 A non-isolated buck regulator powering I/O modules in harsh factory environments.

IC Role / Device Role / Timing Role: Main power switch operating in continuous conduction mode (CCM) with overtemperature and overcurrent protection.

Use Value: 175 °C maximum junction temperature and 110 mJ avalanche rating ensure survival during 100 ms short-circuit events without latch-up.

Use Scenario: Compact 28 V–5 V isolated DC-DC module for CT scanner detector bias supply with strict EMI limits.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with zero-voltage switching (ZVS) assist to suppress switching noise.

Use Value: Soft-recovery body diode (t_rr = 37 ns) cuts high-frequency EMI by 12 dBµV compared to standard MOSFETs, meeting CISPR 11 Class B.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 12 mΩ @ 4.5 V; higher Q_g (21 nC); same TO-220AB package	Better conduction loss but slower switching due to 90% higher gate charge-less suitable for >1 MHz designs	Select when priority is lowest R_DS(on) and switching frequency ≤500 kHz.
STP55NF06L	R_DS(on) = 14 mΩ @ 4.5 V; lower ID (50 A); different pinout (G-D-S)	Lower current rating and non-identical pin assignment require PCB redesign-no drop-in replacement	Choose only if sourcing constraints require STMicroelectronics supply chain alignment.

Compared with IRL3715PBF, IRL3803PBF offers lower conduction loss but sacrifices switching speed, while STP55NF06L requires layout changes and delivers marginally lower current handling-making IRL3715PBF the optimal balance of R_DS(on), Q_g, and pin compatibility for high-frequency SMPS.

Availability

IRL3715PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRL3715PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL3715PBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies where low gate drive voltage and rugged avalanche performance are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The IRL3715PBF has a specified junction temperature range of −55 °C to +175 °C. For continuous operation, the absolute maximum steady-state junction temperature is 175 °C. Derating begins at T_C = 25 °C using the linear derating factor of 0.48 W/°C, meaning power dissipation must be reduced by 0.48 W for each degree above 25 °C case temperature to maintain safe thermal operation.

Can IRL3715PBF be used with 3.3 V gate drive?

Yes-its gate threshold voltage (V_GS(th)) is rated 1.0–3.0 V, and it achieves 15 mΩ R_DS(on) at V_GS = 4.5 V. At 3.3 V, typical R_DS(on) rises to ~20 mΩ (per Fig. 3 transfer curve), delivering usable performance for moderate-current applications (<15 A). For full 54 A capability, 4.5 V or higher gate drive is required.

Is the TO-220AB package electrically isolated?

No-the TO-220AB package has the drain terminal internally connected to the metal tab. This tab is electrically common with pins 2 and 4. If mounting to a grounded heatsink, an insulating washer and shoulder washer must be used to prevent short circuits. The plastic body provides only mechanical insulation-not functional electrical isolation.

Does IRL3715PBF have avalanche rating documentation?

Yes-Infineon specifies single-pulse avalanche energy (E_AS) as 110 mJ at I_AR = 21 A, tested per JEDEC JESD24-1. The device is fully characterized for unclamped inductive switching (UIS), including waveforms, energy vs. current plots (Fig. 12c), and test circuit details (Fig. 12a), confirming ruggedness in real-world inductive fault conditions.

IRL3715PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 54A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1060 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL3715PBF FAQ

1.How can I place an order for IRL3715PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3715PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3715PBF reliable?

The price and inventory of IRL3715PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3715PBF is usually 5 days.

3.What payment methods are accepted for IRL3715PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3715PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3715PBF?

IRL3715PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3715PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3715PBF?

For technical support, including IRL3715PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3715PBF requirements.

6.How does Aetrix verify that IRL3715PBF is sourced from the original manufacturer or authorized distributors?

All IRL3715PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3715PBF meets industry standards.

7.What is the process for return or replacement of IRL3715PBF?

All IRL3715PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3715PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3715PBF part is unused and in its original packaging.

Return procedure for IRL3715PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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