Infineon Technologies IRL3715SPBF

Overview

IRL3715SPBF from Infineon Technologies is a 20 V, 54 A N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 14 mΩ R_DS(on) at V_GS = 4.5 V, supports 210 A pulsed drain current, and features fully characterized avalanche capability (110 mJ E_AS) for robust operation in telecom and industrial power supplies.

For engineers reviewing the IRL3715SPBF datasheet, IRL3715SPBF pinout, IRL3715SPBF application, or IRL3715SPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V logic-level turn-on), ultra-low on-resistance at 4.5 V, body diode reverse recovery performance (37–57 ns t_rr), and thermal resistance (R_θJC = 2.1 °C/W) for high-power-density board designs.

Technical Context

This HEXFET device uses planar vertical DMOS technology with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining fast switching and rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (1.0–3.0 V) and transconductance (26 S typ.) enable stable operation under 3.3 V/4.5 V microcontroller drive without external level-shifting.

The integrated body diode exhibits low forward voltage (0.9–1.3 V at 21 A, T_J = 25°C) and tightly specified reverse recovery charge (28–45 nC), making it suitable for high-efficiency synchronous rectification where diode conduction loss and switching loss must be minimized simultaneously.

Key Specifications

Pinout & Package

IRL3715SPBF is housed in a TO-220AB package with exposed drain tab for thermal and electrical connection. The case is electrically connected to pins 2 and 4 (both Drain terminals), enabling low-inductance, high-current drain routing and efficient heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3715SPBF, IRL3713PBF offers lower on-resistance but sacrifices avalanche robustness and increases gate drive demand, while SI2308DS-T1-E3 trades thermal capacity and current handling for ultra-small footprint-neither replicates the balanced 54 A/20 V/4.5 V logic-level performance envelope of the IRL3715SPBF.

Availability

IRL3715SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IRL3715SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IRL37xx series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space- and thermally-constrained applications where 3.3 V/4.5 V gate drive and low R_DS(on) are mandatory.

FAQ

What is the maximum junction temperature for continuous operation?

The IRL3715SPBF has a rated junction temperature range of –55°C to +175°C. For continuous operation, the absolute maximum sustained T_J is 175°C, but design best practice limits steady-state operation to ≤150°C to ensure long-term reliability and maintain R_DS(on) within specification. Thermal derating begins at T_C = 25°C with a linear factor of 0.48 W/°C.

Can IRL3715SPBF be used in a high-side switch configuration with bootstrap gate drive?

Yes - the IRL3715SPBF supports high-side switching using bootstrap gate drive circuits. Its V_GS rating of ±20 V and logic-level threshold (1.0–3.0 V) allow reliable turn-on even when V_GS swings from 0 V to ~12 V. However, the bootstrap capacitor must be sized to sustain gate voltage during 100% duty cycle conditions, and the body diode's reverse recovery characteristics must be managed in hard-switched topologies.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.9–1.3 V at 21 A and t_rr = 37–57 ns, which is slower and higher-V_F than comparable 20 V Schottky diodes (e.g., 0.45 V, <10 ns). However, its co-packaged integration eliminates layout parasitics and enables precise timing control in synchronous rectification, yielding net system efficiency gains despite inferior standalone diode specs.

Is the TO-220AB package electrically isolated from the PCB mount surface?

No - the TO-220AB package's metal tab (pins 2 and 4) is internally connected to the Drain terminal and is not electrically isolated. When mounted to a heatsink or copper pour, the Drain becomes common with that surface. Electrical isolation requires an insulating pad (e.g., mica or polymer film) and shoulder washers, and thermal interface material must be non-conductive if isolation is required.