Infineon Technologies IRL3715STRLPBF

Overview

IRL3715STRLPBF from Infineon Technologies is a 20 V, 54 A, 14 mΩ N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for synchronous rectification in high-frequency isolated DC-DC converters and buck regulators for telecom and processor power. It features ultra-low gate impedance, fully characterized avalanche capability (110 mJ), and specified R_DS(on) at 4.5 V_GS.

For engineers reviewing the IRL3715STRLPBF datasheet, IRL3715STRLPBF pinout, IRL3715STRLPBF application, or IRL3715STRLPBF equivalent, key selection criteria include its 14 mΩ R_DS(on) @ 4.5 V_GS, 210 A pulsed drain current, 11 nC total gate charge, and thermal resistance of 2.1 °C/W (junction-to-case), critical for high-efficiency, thermally constrained SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS technology with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance up to 110 mJ. Its gate threshold voltage (1.0–3.0 V) and strong transconductance (26 S typical) support direct logic-level drive from 3.3 V/5 V controllers.

The integrated body diode exhibits fast reverse recovery (37–57 ns) and low forward voltage (0.9 V @ 21 A, 25°C), enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by a defined junction-to-case path (R_θJC = 2.1 °C/W) and PCB-mount R_θJA = 40 °C/W.

Key Specifications

Pinout & Package

IRL3715STRLPBF is housed in a TO-220AB package with exposed drain tab for thermal and electrical connection. The case serves as the drain terminal and must be electrically isolated from heatsink unless system grounding scheme permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3715STRLPBF, IRL3713PBF trades higher gate charge for lower R_DS(on), while SiHFL210ST-M3/45 offers balanced performance with superior V_GS(th) consistency-making it more suitable for tightly synchronized multi-device layouts.

Availability

IRL3715STRLPBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial motor drives, and LED driver power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL3715STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL37xx series belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in telecom, computing, and industrial power systems where low-voltage gate drive and ruggedness are mandatory.

FAQ

Is IRL3715STRLPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of 1.0–3.0 V and guaranteed R_DS(on) ≤15 mΩ at 4.5 V_GS, the device achieves full enhancement using 3.3 V logic when paired with adequate gate drive current (≥2 A peak). However, for margin-critical designs, 5 V drive is recommended to ensure robust operation across temperature and process variation.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 38 A continuous drain current at T_C = 100°C and V_GS = 10 V. This derating reflects thermal limits of the TO-220AB package and must be applied with verified heatsink performance; actual usable current depends on ambient temperature, airflow, and thermal interface resistance.

Does IRL3715STRLPBF have built-in ESD protection?

No. The device lacks integrated gate protection diodes and is rated for only ±20 V gate-to-source voltage. External Zener clamping (e.g., 12 V TVS between gate and source) is required in environments with routing near connectors or cables to prevent gate oxide damage from ESD events exceeding ±15 V.

Can IRL3715STRLPBF replace IRL3715PBF in existing designs?

Yes. IRL3715STRLPBF is the tape-and-reel variant of the same die and package as IRL3715PBF (tube version), with identical electrical specifications, thermal characteristics, and pinout. No layout or firmware changes are needed; only handling and assembly processes differ due to packaging format.