Infineon Technologies IRL3715STRRPBF

Overview

IRL3715STRRPBF from Infineon Technologies is a 20 V, 54 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 14 mΩ R_DS(on) at V_GS = 4.5 V, supports 210 A pulsed drain current, and features fully characterized avalanche capability (110 mJ E_AS) for robust operation in telecom and industrial power supplies.

For engineers reviewing the IRL3715STRRPBF datasheet, IRL3715STRRPBF pinout, IRL3715STRRPBF application, or IRL3715STRRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V logic-level), ultra-low on-resistance at low V_GS, fast switching (t_r = 73 ns, t_f = 5.1 ns), body diode recovery performance (t_rr = 37–57 ns), and thermal robustness (T_J = –55 to +175 °C).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to achieve low R_DS(on) while maintaining high dV/dt immunity and avalanche ruggedness. Its gate threshold voltage (1.0–3.0 V) and transconductance (26 S typical) enable stable turn-on with standard 3.3 V/5 V logic drivers.

The device integrates a co-packaged, fast-recovery body diode with V_SD = 0.9 V (T_J = 25 °C, I_S = 21 A) and Q_rr = 28–45 nC, supporting zero-voltage switching (ZVS) topologies and minimizing reverse recovery losses in synchronous rectifiers.

Key Specifications

Pinout & Package

IRL3715STRRPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 4-pin configuration, and lead-free finish per JEDEC MS-001BA. The package provides mechanical stability, direct heatsink mounting, and 2.1 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3715STRRPBF, IRL3803PBF trades avalanche ruggedness for lower on-resistance in lighter-load applications, while STP36NF20 shifts focus to higher-voltage operation at the expense of logic-level compatibility and switching speed-making IRL3715STRRPBF optimal for 20 V, high-frequency, low-V_GS synchronous rectification.

Availability

IRL3715STRRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRL3715STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRL3715STRRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion where low gate drive voltage and fast switching are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRL3715STRRPBF supports 38 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and assumes proper heatsinking per the 2.1 °C/W R_θJC specification.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop and control dV/dt during switching transitions. While not strictly required for basic turn-on, omitting it risks oscillation, electromagnetic interference, and potential gate oxide stress-especially in high-speed (>300 kHz) or high-current (>20 A) applications.

Can IRL3715STRRPBF replace a standard 20 V Schottky diode in synchronous rectification?

Yes-its 14 mΩ R_DS(on) at 4.5 V yields lower forward voltage drop than a typical 40 V Schottky (0.45–0.55 V) above ~3 A load current. When driven synchronously with matched timing, it reduces conduction loss and improves efficiency, provided gate drive timing avoids shoot-through and accounts for body diode reverse recovery.

Is the TO-220AB package electrically isolated between drain and mounting surface?

No-the TO-220AB package used in IRL3715STRRPBF has the drain terminal internally connected to the metal tab. Therefore, the heatsink must be electrically isolated from system ground unless the circuit topology explicitly references the drain as the common node (e.g., high-side switch configuration with floating gate drive).