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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3716LPBF

Name: IRL3716LPBF
Brand: Infineon Technologies
SKU: IRL3716LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3716LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL3716LPBF.pdf

Description:: MOSFET N-CH 20V 180A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL3716LPBF from Infineon Technologies is a 20 V, 4.0 mΩ (at V_GS = 4.5 V), 180 A N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and server power supplies.

For engineers reviewing the IRL3716LPBF datasheet, IRL3716LPBF pinout, IRL3716LPBF application, or IRL3716LPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, avalanche energy rating (640 mJ), gate charge (53–79 nC), thermal resistance (R_θJC = 0.72 °C/W), and body diode reverse recovery performance (Q_rr = 85–130 nC).

Technical Context

This HEXFET device uses planar stripe cell structure with ultra-low gate impedance and fully characterized unclamped inductive switching (UIS) capability. It delivers 4.0 mΩ R_DS(on) at 4.5 V gate drive and supports continuous drain current up to 130 A at T_C = 100 °C.

Its dynamic parameters-Q_gd = 24–35 nC, C_iss = 5090 pF, and t_r/t_f = 140/36 ns-are specified at V_DD = 10 V, I_D = 72 A, and R_G = 3.9 Ω-enabling efficient operation in >500 kHz switching topologies with minimal gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and low-voltage synchronous rectification.
R_DS(on) @ V_GS = 4.5 V	4.0 mΩ - Enables <1 W conduction loss at 150 A, critical for high-current CPU/GPU VRMs.
I_D @ T_C = 25 °C	180 A - Supports high peak current demands in transient load steps without thermal derating.
E_AS	640 mJ - Robust single-pulse avalanche capability ensures reliability under inductive switching stress.
Q_g	53–79 nC - Low-to-moderate gate charge enables fast turn-on with standard 1–2 A gate drivers.
R_θJC	0.72 °C/W - Enables direct heatsink mounting for high-power density designs with <10 °C junction rise at 100 W dissipation.
Q_rr	85–130 nC - Minimizes body diode recovery loss during hard-switched synchronous rectification.

Pinout & Package

IRL3716LPBF is housed in a TO-262 (I²PAK) lead-free package with exposed drain tab for thermal and electrical connection. The case is electrically connected to pins 2 and 4 (Drain), enabling low-inductance, high-current PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤3.0 V threshold; low Q_gs (17–26 nC) enables fast, low-loss turn-on.
2	Drain	Main high-side or low-side power path; electrically tied to metal tab for thermal sinking and current sharing.
3	Source	Reference node for gate drive and current sensing; connects to power ground or switch node depending on topology.
4	Drain	Second drain terminal for parallel current routing and reduced package inductance in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.0 mΩ - Eliminates need for gate boosters in 5 V logic-driven synchronous rectifiers.
Fully characterized avalanche	640 mJ E_AS, 72 A I_AR - Allows safe operation in unclamped inductive switching without external snubbers.
Optimized body diode	Q_rr = 85–130 nC, t_rr = 180–280 ns - Reduces cross-conduction loss and EMI in synchronous buck converters.
Low gate-to-drain charge	Q_gd = 24–35 nC - Limits Miller-induced shoot-through risk and improves dv/dt immunity.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: 48 V to 12 V isolated forward converter with synchronous rectification in base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 94%.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V enables >1.2 W lower loss vs. 5 mΩ alternatives at 120 A, directly improving thermal margin.

Use Scenario: Multiphase buck converter supplying 1.0 V @ 200 A to AI accelerators in cloud data centers.

IC Role / Device Role / Timing Role: High-current, low-V_DS power stage switch operating at 500–800 kHz with 4.5 V gate drive.

Use Value: 0.72 °C/W R_θJC allows direct heatsink mounting, reducing junction temperature by ~15 °C versus TO-220 equivalents at same power.

Industrial SMPS

Active ORing Circuits

Use Scenario: 24 V input, 5 V/60 A output industrial power supply with overtemperature and short-circuit protection.

IC Role / Device Role / Timing Role: Primary-side switch in high-efficiency flyback or LLC resonant converter.

Use Value: 210 W P_D @ T_C = 25 °C supports full-load operation without forced air, simplifying mechanical design.

Use Scenario: Dual-redundant 12 V power bus with automatic fault isolation in network switches.

IC Role / Device Role / Timing Role: Low-forward-drop ORing FET replacing ideal diode controllers in hot-swap circuits.

Use Value: V_SD = 0.80–0.93 V at 72 A reduces forward drop by >300 mV vs. discrete diode solutions, cutting heat generation by >22 W.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PbF	R_DS(on) = 5.5 mΩ @ 4.5 V; lower ID (120 A); same TO-220AB package	Limited to ≤100 A continuous loads; higher conduction loss at high current	Select when cost sensitivity outweighs efficiency needs and thermal budget permits higher R_DS(on).
IRF3710PbF	V_DS = 100 V; R_DS(on) = 28 mΩ @ 10 V; not rated for 4.5 V drive	Requires 10 V gate drive; unsuitable for 5 V logic control or low-voltage synchronous rectification	Only consider for higher-voltage, lower-frequency applications where 20 V rating is insufficient.

Compared with IRL3713PbF and IRF3710PbF, IRL3716LPBF uniquely combines 20 V rating, 4.0 mΩ R_DS(on) at 4.5 V, and TO-262 thermal performance-making it irreplaceable for high-current, high-frequency, low-voltage synchronous rectification where both conduction loss and thermal resistance are critical.

Availability

IRL3716LPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRL3716LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL3716LPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current, low-voltage switching in next-generation power conversion systems.

FAQ

What is the maximum junction temperature for IRL3716LPBF?

The absolute maximum junction temperature (T_J) is +175 °C, with storage temperature range from –55 °C to +175 °C. Operation above 150 °C requires derating per the linear derating factor of 1.4 W/°C beyond T_C = 100 °C, and thermal design must ensure sustained T_J remains within this limit under worst-case load and ambient conditions.

Is IRL3716LPBF suitable for 3.3 V gate drive?

No-IRL3716LPBF has a gate threshold voltage (V_GS(th)) of 1.0–3.0 V, but its R_DS(on) is only guaranteed at V_GS ≥ 4.5 V (4.0 mΩ max). At 3.3 V, R_DS(on) rises significantly (>10 mΩ), increasing conduction loss and thermal stress; it is not recommended for reliable 3.3 V logic-level operation.

How does the dual-drain configuration (pins 2 and 4) affect PCB layout?

Pins 2 and 4 are internally connected to the same drain metallization and exposed tab. This allows symmetric high-current routing: one pin can connect to the main power plane while the other ties to a local decoupling capacitor or heatsink pad-reducing loop inductance and improving EMI performance in high-di/dt switching applications.

Does IRL3716LPBF have avalanche-rated capability, and how is it tested?

Yes-IRL3716LPBF is fully characterized for unclamped inductive switching (UIS) with E_AS = 640 mJ and I_AR = 72 A. Testing follows JEDEC JESD24-1 using the circuit in Figure 12a: a fixed inductor, controlled di/dt, and single-pulse conditions with V_BR(DSS) monitored to ensure no degradation after stress.

IRL3716LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5090 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL3716LPBF FAQ

1.How can I place an order for IRL3716LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3716LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3716LPBF reliable?

The price and inventory of IRL3716LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3716LPBF is usually 5 days.

3.What payment methods are accepted for IRL3716LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3716LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3716LPBF?

IRL3716LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3716LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3716LPBF?

For technical support, including IRL3716LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3716LPBF requirements.

6.How does Aetrix verify that IRL3716LPBF is sourced from the original manufacturer or authorized distributors?

All IRL3716LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3716LPBF meets industry standards.

7.What is the process for return or replacement of IRL3716LPBF?

All IRL3716LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3716LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3716LPBF part is unused and in its original packaging.

Return procedure for IRL3716LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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