Infineon Technologies IRL3716PBF

Overview

IRL3716PBF from Infineon Technologies is a 20 V, 4.0 mΩ (at V_GS = 4.5 V), 180 A N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and processor power. It features ultra-low gate charge (Q_g = 53–79 nC), fast switching (t_r = 140 ns), and fully characterized avalanche capability (E_AS = 640 mJ).

For engineers reviewing the IRL3716PBF datasheet, IRL3716PBF pinout, IRL3716PBF application, or IRL3716PBF equivalent, key selection criteria include R_DS(on) at 4.5 V, pulsed drain current (720 A), junction-to-case thermal resistance (0.72 °C/W), and body diode reverse recovery performance (Q_rr = 87–130 nC) in high-efficiency SMPS designs.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and trench-free structure to achieve low R_DS(on) while maintaining robust avalanche energy rating (640 mJ) and low gate-drain charge (Q_gd = 24–35 nC). Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables direct logic-level drive from 3.3 V or 5 V controllers.

The device integrates a fast, low-V_SD body diode (V_SD = 0.93 V @ 72 A, T_J = 25°C) with controlled reverse recovery (t_rr = 180–280 ns), supporting active OR-ing and synchronous rectification without external Schottky diodes in 48 V input telecom systems.

Key Specifications

Pinout & Package

IRL3716PBF uses the standard TO-220AB package with exposed drain tab for thermal and electrical connection. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3716PBF, IRL3803PBF trades lower voltage rating for reduced gate charge and cost, while SiR872DP-T1-GE3 delivers superior R_DS(on) in a compact package but requires re-engineering of thermal and gate drive design.

Availability

IRL3716PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server CPU voltage regulators, and industrial 24 V power distribution systems requiring stable component supply and long-term manufacturability.

Supply support for IRL3716PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL3716PBF belongs to Infineon's logic-level HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low-voltage gate drive and thermal robustness are essential.

FAQ

What is the maximum continuous drain current for IRL3716PBF at 100°C case temperature?

The maximum continuous drain current is 130 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual PCB copper area, heatsink interface, and ambient airflow in the target application.

Does IRL3716PBF have avalanche capability, and how is it rated?

Yes, IRL3716PBF is fully characterized for unclamped inductive switching with a single-pulse avalanche energy rating of 640 mJ at T_J = 25°C. This rating is measured per JEDEC JESD24-11 and applies to repetitive events only if peak junction temperature remains within –55°C to +175°C limits and duty cycle is strictly controlled.

Can IRL3716PBF be used with 3.3 V gate drive without external level shifting?

Yes - its gate threshold voltage range (1.0–3.0 V) and low gate charge (53–79 nC) allow reliable turn-on with 3.3 V logic-level signals. However, full enhancement (R_DS(on) ≤ 4.0 mΩ) requires ≥4.5 V V_GS; operation at exactly 3.3 V yields higher on-resistance (~6–8 mΩ) and must be verified for thermal margin at full load.

How does the dual-drain configuration (Pins 2 and 4) affect PCB layout and thermal design?

Pins 2 and 4 are internally connected to the same drain node and metal tab. Both must be soldered to the same large copper pour or heatsink pad to minimize inductance and maximize thermal transfer. Splitting these connections introduces parasitic inductance that degrades switching performance and increases voltage overshoot during turn-off.