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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL3716SPBF

Name: IRL3716SPBF
Brand: Infineon Technologies
SKU: IRL3716SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL3716SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL3716SPBF.pdf

Description:: MOSFET N-CH 20V 180A D2PAK

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Product details

Overview

IRL3716SPBF from Infineon Technologies is a 20 V, 4.0 mΩ (at V_GS = 4.5 V), 180 A N-channel enhancement-mode HEXFET^® Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It features ultra-low gate impedance, fully characterized avalanche capability, and robust body diode with 180 ns reverse recovery time at 25°C.

For engineers reviewing the IRL3716SPBF datasheet, IRL3716SPBF pinout, IRL3716SPBF application, or IRL3716SPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, pulsed drain current (720 A), junction-to-case thermal resistance (0.72 °C/W), and safe operating area under unclamped inductive switching - critical for telecom power supply and CPU VRM designs.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch to achieve sub-5 mΩ on-resistance at logic-level gate drive (4.5 V), enabling direct interface with low-voltage PWM controllers without level-shifting. Its low Q_gd/Q_gs ratio (≈1.4) supports fast, controllable turn-off in hard-switched topologies.

The device integrates a co-packaged, low-V_F body diode (0.93 V at 72 A, 25°C) with controlled reverse recovery (Q_rr = 87 nC), minimizing switching loss and voltage overshoot during freewheeling in synchronous buck stages. Avalanche energy rating (640 mJ) is validated per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) @ V_GS = 4.5 V	4.0 mΩ - Enables <1 W conduction loss at 150 A continuous, critical for high-current CPU core supplies
I_D @ T_C = 25°C	180 A - Sustains full-rated output current with heatsink mounting at ambient-referenced case temperature
E_AS	640 mJ - Supports single-pulse unclamped inductive switching up to 72 A without failure, verified per JEDEC standard
Q_g	53–79 nC - Gate charge range defines driver strength requirement; enables <100 ns turn-on with 1 A peak gate driver
R_θJC	0.72 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >100 W dissipation at ΔT = 72°C
t_rr	180–280 ns - Reverse recovery time ensures minimal shoot-through risk and EMI in synchronous rectifier operation

Pinout & Package

IRL3716SPBF is housed in a TO-220AB package with isolated tab (drain-connected), rated for 210 W at T_C = 25°C and featuring industry-standard mechanical footprint and thermal interface geometry.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Accepts 0–20 V logic-level drive; low input capacitance (C_iss = 5090 pF) minimizes driver loading
2 - Drain	Main current path (high-side or low-side)	Internally connected to metal tab; electrically isolated from heatsink unless mounted with insulating pad
3 - Source	Reference node for gate drive and current sensing	Serves as return path for load current and gate driver ground; low-inductance layout essential for stability
4 - Drain (Tab)	Thermal and electrical connection	Provides primary heat conduction path to heatsink; must be electrically referenced to circuit drain node

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.0 mΩ enables efficient operation directly from 5 V or 3.3 V controller outputs without gate boosting
Low gate charge (Q_g)	53–79 nC reduces switching loss and allows use of compact, low-cost gate drivers in high-frequency (>500 kHz) designs
Robust avalanche rating	640 mJ single-pulse energy withstand supports reliable operation under inductive fault conditions in telecom SMPS
Optimized body diode	180 ns t_rr, 87 nC Q_rr minimizes reverse recovery loss and voltage spikes in synchronous rectifier applications
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020 and EU RoHS Directive 2011/65/EU

Applications

Telecom Isolated DC-DC Converters

High-Frequency CPU VRMs

Use Scenario: 48 V to 12 V isolated forward converter with synchronous rectification in base station power modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to reduce conduction loss and improve efficiency above 92%.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V enables >1.5% efficiency gain over 5 mΩ alternatives at 100 A output, reducing thermal stress on PCB.

Use Scenario: Multiphase buck converter supplying 1.0–1.3 V at up to 200 A to modern server CPUs.

IC Role / Device Role / Timing Role: High-current, low-V_DS power stage switch operating at 300–600 kHz with interleaved phase control.

Use Value: 180 A continuous rating and 0.72 °C/W R_θJC support stable operation under transient load steps without derating at 70°C case temperature.

Industrial Motor Drive Half-Bridge Legs

Active ORing Circuits

Use Scenario: 24 V input H-bridge driving brushed DC motors in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, commutated at ≤20 kHz with dead-time control.

Use Value: 720 A pulsed drain current and 640 mJ avalanche energy ensure survivability during motor stall or short-circuit events.

Use Scenario: Redundant 12 V power rail combining using back-to-back MOSFETs in telecom shelf management units.

IC Role / Device Role / Timing Role: Unidirectional ORing switch with integrated body diode used in single-MOSFET topology for cost-sensitive designs.

Use Value: 0.93 V V_SD at 72 A and 180 ns t_rr reduce forward drop and reverse recovery loss versus discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3713PBF	R_DS(on) = 3.3 mΩ @ 4.5 V; lower ID (140 A); same TO-220AB package	Better conduction loss at lower current (<120 A); reduced avalanche rating (420 mJ)	Select when optimizing for lowest R_DS(on) below 120 A and thermal budget permits tighter derating
STP120N4F6	R_DS(on) = 3.8 mΩ @ 4.5 V; higher Q_g (105 nC); TO-220FP package (no isolated tab)	Higher gate drive power required; non-isolated drain limits heatsink options	Choose only if board layout accommodates non-isolated mounting and driver can source >1.5 A peak

Compared with IRL3716SPBF, IRL3713PBF offers lower on-resistance but sacrifices 40 A continuous current and 220 mJ avalanche margin, while STP120N4F6 trades gate drive efficiency for slightly better R_DS(on) but eliminates thermal isolation - making IRL3716SPBF optimal for high-reliability, thermally constrained synchronous rectifier roles.

Availability

IRL3716SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, CPU voltage regulator modules, industrial motor drives, and active ORing circuits requiring stable component supply across multi-year production cycles.

Supply support for IRL3716SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRL37xx series belongs to Infineon's logic-level HEXFET^® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in space-constrained, thermally demanding environments such as telecom infrastructure and computing power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL3716SPBF supports 130 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 180 A rating at 25°C, based on a linear derating factor of 1.4 W/°C and package thermal limits.

Does the IRL3716SPBF have an isolated drain tab?

Yes - the TO-220AB package features an electrically isolated drain tab (Pin 4), confirmed by JEDEC outline drawing and Infineon's mechanical datasheet. The tab is internally connected to the drain but insulated from the mounting surface, allowing direct heatsink attachment without additional isolation hardware.

Can this MOSFET be used in avalanche mode repeatedly?

No - the 640 mJ E_AS rating applies only to single-pulse unclamped inductive switching. Repetitive avalanche operation is not characterized or guaranteed; sustained avalanche stress may cause parametric shift or failure. Designers must avoid repeated avalanche via proper snubbing, clamping, or layout.

What is the typical gate threshold voltage range?

The gate threshold voltage (V_GS(th)) is specified from 1.0 V to 3.0 V at V_DS = V_GS and I_D = 250 µA. Typical turn-on occurs between 2.5 V and 3.5 V, with full enhancement achieved at ≥4.5 V - consistent with its designation as a logic-level MOSFET.

IRL3716SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5090 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL3716SPBF FAQ

1.How can I place an order for IRL3716SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3716SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3716SPBF reliable?

The price and inventory of IRL3716SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3716SPBF is usually 5 days.

3.What payment methods are accepted for IRL3716SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3716SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3716SPBF?

IRL3716SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3716SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3716SPBF?

For technical support, including IRL3716SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3716SPBF requirements.

6.How does Aetrix verify that IRL3716SPBF is sourced from the original manufacturer or authorized distributors?

All IRL3716SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3716SPBF meets industry standards.

7.What is the process for return or replacement of IRL3716SPBF?

All IRL3716SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3716SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3716SPBF part is unused and in its original packaging.

Return procedure for IRL3716SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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