Infineon Technologies IRL3716STRLPBF

Overview

IRL3716STRLPBF from Infineon Technologies is a 20 V, 4.0 mΩ (at V_GS = 4.5 V), 180 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators for telecom and server CPU power delivery.

For engineers reviewing the IRL3716STRLPBF datasheet, IRL3716STRLPBF pinout, IRL3716STRLPBF application, or IRL3716STRLPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, avalanche energy rating (640 mJ), gate charge (53–79 nC), thermal resistance (R_θJC = 0.72 °C/W), and SOA compliance at 100 µs pulse width.

Technical Context

This HEXFET device uses planar stripe cell structure with ultra-low gate impedance and fully characterized unclamped inductive switching behavior. It supports high di/dt operation (100 A/µs) and features a body diode with t_rr = 180–280 ns and Q_rr = 85–130 nC across -55°C to +175°C junction range.

Its gate threshold voltage (1.0–3.0 V) enables direct logic-level drive from 3.3 V or 4.5 V controllers, while R_DS(on) remains stable up to T_J = 175°C (normalized R_DS(on) ≈ 2.0× at 175°C vs. 25°C). The device is rated for continuous drain current of 130 A at T_C = 100°C.

Key Specifications

Pinout & Package

IRL3716STRLPBF is housed in a TO-220AB package with exposed drain tab for thermal mounting. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration for enhanced current handling and thermal path).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3716STRLPBF, IRL3713PbF trades avalanche robustness for lower R_DS(on), while SiR872DP-T1-GE3 offers compact packaging at the cost of thermal performance and requires layout-level thermal optimization.

Availability

IRL3716STRLPBF is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, industrial motor drives, and active OR-ing circuits requiring stable component supply and long-term production continuity.

Supply support for IRL3716STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in telecom, computing, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL3716STRLPBF supports 130 A continuous drain current at T_C = 100°C, verified per Absolute Maximum Ratings table in the official Infineon datasheet (PD = 100 W, R_θJC = 0.72 °C/W). This rating assumes proper heatsinking and airflow per JEDEC JESD51-2 standards.

Does this MOSFET require a gate driver for 3.3 V microcontroller operation?

No external gate driver is required. With V_GS(th) ranging from 1.0 V to 3.0 V and guaranteed R_DS(on) at 4.5 V, the device fully enhances using standard 3.3 V logic outputs-though gate series resistance (≤10 Ω) is recommended to dampen ringing during fast switching.

How does the dual-drain (Pin 2 & Pin 4) configuration affect PCB layout?

Pins 2 and 4 are internally shorted to the same drain metallization and exposed tab. Layout must connect both pins to the same high-current copper pour or thermal pad. Separating them creates current imbalance and localized heating; omitting one pin reduces current capacity by ~15% and increases thermal resistance.

Is the body diode suitable for freewheeling in synchronous buck converters?

Yes-the body diode is fully characterized with t_rr = 180–280 ns and Q_rr = 85–130 nC at 72 A, enabling clean commutation in 500 kHz–1 MHz buck stages. Its V_SD = 0.93 V at 72 A ensures low forward loss during dead-time conduction.