Infineon Technologies IRL3803

Overview

IRL3803 from Infineon Technologies is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 30 V V_DS, 140 A continuous drain current at T_C = 25°C, and 6 mΩ R_DS(on) at V_GS = 10 V. It features fully avalanche-rated operation, 175°C junction temperature capability, and fast switching with 14 ns turn-on delay and 230 ns rise time-used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL3803 datasheet, IRL3803 pinout, IRL3803 application, or IRL3803 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), ultra-low on-resistance at 4.5 V gate drive (9 mΩ), avalanche energy rating (610 mJ single-pulse), thermal resistance (R_θJC = 0.75°C/W), and TO-220AB mechanical mounting requirements.

Technical Context

This HEXFET device uses fifth-generation silicon process to achieve low R_DS(on) density and high current handling without requiring gate drive above 5 V. Its body diode supports synchronous rectification with t_rr = 120–180 ns and Q_rr = 450–680 nC under specified conditions.

The MOSFET integrates internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH) and exhibits dynamic dv/dt immunity up to 5.0 V/ns-critical for hard-switched topologies where parasitic turn-on must be avoided.

Key Specifications

Pinout & Package

IRL3803 is housed in a TO-220AB package with isolated tab (drain-connected), standardized for through-hole mounting and heatsink interface. The package provides low thermal resistance and mechanical robustness for industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRF3205PbF and STP55NF06L, IRL3803 delivers superior efficiency at 30 V due to its 6 mΩ R_DS(on) and 5.0 V/ns dv/dt rating-making it optimal for compact, thermally constrained 12–24 V power stages requiring minimal gate drive overhead.

Availability

IRL3803 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, industrial power supplies, and LED drivers requiring stable component supply across long-lifecycle embedded programs.

Supply support for IRL3803 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL3803 belongs to Infineon's HEXFET™ logic-level MOSFET product line, engineered for high-current, low-voltage switching applications where gate drive simplicity, thermal efficiency, and ruggedness are critical-especially in space-constrained power conversion systems.

FAQ

Is IRL3803 compatible with 3.3 V microcontroller GPIOs?

Yes. With V_GS(th) of 1.0–2.0 V and R_DS(on) = 9 mΩ at V_GS = 4.5 V, the IRL3803 fully enhances using standard 3.3 V logic outputs. No level shifter is needed, though gate resistor selection (e.g., 10–22 Ω) should limit peak current during switching.

What is the maximum continuous current at 100°C case temperature?

The datasheet specifies 98 A continuous drain current at T_C = 100°C and V_GS = 10 V. This reflects thermal derating from 140 A at 25°C, based on R_θJC = 0.75°C/W and maximum T_J = 175°C. Actual usable current depends on heatsink performance and ambient conditions.

Does IRL3803 require a gate resistor for stability?

Yes. A series gate resistor (typically 10–47 Ω) is required to dampen ringing caused by interaction between gate charge (Q_g = 140 nC), internal inductances (L_S = 7.5 nH), and PCB layout parasitics. Omission risks oscillation, increased EMI, and accelerated gate oxide stress.

Can IRL3803 replace IRLZ44N in existing designs?

Yes, with design verification. Both are logic-level N-channel TO-220 MOSFETs, but IRL3803 offers lower R_DS(on) (6 mΩ vs. 25 mΩ), higher current rating (140 A vs. 49 A), and greater avalanche energy (610 mJ vs. 220 mJ). Layout and gate drive must accommodate higher dI/dt and faster switching.