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Infineon Technologies IRL3803PBF
- Part No.:
- IRL3803PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL3803PBF.pdf
- Description:
- MOSFET N-CH 30V 140A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2
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Product details
Overview
IRL3803PBF from Infineon Technologies is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 30 V VDSS, 140 A continuous drain current at 25°C, 0.006 Ω RDS(on) at VGS = 10 V, and fully avalanche-rated for 610 mJ single-pulse energy - deployed in high-current DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRL3803PBF datasheet, IRL3803PBF pinout, IRL3803PBF application, or IRL3803PBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0 V), low RDS(on) at 4.5 V (0.009 Ω), fast switching (tr = 230 ns), thermal resistance (RθJC = 0.75 °C/W), and body diode recovery performance (trr = 120–180 ns).
Technical Context
This HEXFET device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
The integrated body diode supports synchronous rectification and freewheeling in buck converters and H-bridge motor drives, with characterized reverse recovery charge (Qrr = 450–680 nC) and peak dv/dt rating of 5.0 V/ns under specified di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - maximum blocking voltage before avalanche breakdown; suitable for 24 V bus systems with margin. |
| RDS(on) @ VGS = 10 V | 0.006 Ω - enables <1 W conduction loss at 71 A, critical for high-efficiency power stages. |
| RDS(on) @ VGS = 4.5 V | 0.009 Ω - ensures full enhancement with standard logic-level drivers, eliminating gate boosters. |
| ID (continuous, TC = 25°C) | 140 A - requires heatsinking; derates linearly to 98 A at 100°C case temperature. |
| EAS | 610 mJ - validated single-pulse avalanche energy at VDD = 15 V, L = 180 µH, enabling robust fault tolerance. |
| tr / tf | 230 ns / 35 ns - fast edge rates reduce switching losses in hard-switched topologies up to ~200 kHz. |
| Qg | 140 nC - determines gate driver current requirement; 1.3 Ω external gate resistor yields measured td(off) = 29 ns. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, 0.75 °C/W junction-to-case thermal resistance, and 10 lbf·in (1.1 N·m) recommended mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts logic-level input (1.0 V threshold); total gate charge 140 nC dictates driver sizing. |
| D (Drain) | High-side power node | Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground. |
| S (Source) | Power return / reference node | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects switching waveform ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0 V enables direct interface with 3.3 V/5 V MCUs and PWM controllers without level shifters. |
| Fully avalanche-rated | 610 mJ EAS and 20 mJ EAR support reliable operation under inductive load switching faults. |
| Ultra-low RDS(on) | 0.006 Ω at 10 V reduces conduction loss by >40% vs. legacy 30 V MOSFETs in same package. |
| Enhanced dv/dt immunity | 5.0 V/ns peak diode recovery dv/dt rating prevents false turn-on during high-speed commutation. |
| 175°C max junction temperature | Enables operation in sealed enclosures or high-ambient industrial environments without derating penalties. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 24 V input, 5–12 V output, 50–100 A synchronous buck regulator for telecom power shelves. IC Role / Device Role: High-side main switch with integrated body diode used for synchronous rectification. Use Value: 0.006 Ω RDS(on) limits conduction loss to <2.5 W at 71 A, improving efficiency over 94% at full load. | Use Scenario: 24 V H-bridge driving 150 W brushed DC motors in automated guided vehicles (AGVs). IC Role / Device Role: Low-side switch in half-bridge configuration; body diode handles freewheeling current. Use Value: 610 mJ EAS withstands inductive kickback during rapid PWM reversal without snubbers or clamps. |
| Hot-Swap Controller | LED Constant-Current Driver |
Use Scenario: Inrush-limited 24 V board-level power insertion in redundant server backplanes. IC Role / Device Role: Series pass element controlled via linear or PWM gate modulation. Use Value: 140 A continuous rating and 0.75 °C/W RθJC allow safe linear-mode operation up to 15 W dissipation with minimal heatsink. | Use Scenario: 30 A constant-current driver for high-brightness LED arrays in industrial lighting fixtures. IC Role / Device Role: Low-side current-sense switch modulated by analog/PWM dimming signal. Use Value: 0.009 Ω RDS(on) at 4.5 V ensures stable current regulation even with 3.3 V MCU outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PBF | VDSS = 55 V, RDS(on) = 0.008 Ω @ 10 V, higher gate charge (145 nC), no 4.5 V rating. | Better voltage margin but higher conduction loss and slower switching at logic-level drive. | Prefer when 55 V bus isolation or legacy design reuse is required; avoid if 3.3 V drive or <200 kHz switching is needed. |
| STP30NF20 | VDSS = 200 V, RDS(on) = 0.036 Ω @ 10 V, VGS(th) = 2–4 V, not logic-level optimized. | Higher voltage rating trades off significantly higher on-resistance and gate drive sensitivity. | Select only for 100–200 V applications where 30 V devices cannot meet clearance requirements. |
Compared with IRF3205PBF and STP30NF20, IRL3803PBF delivers superior efficiency at 24 V systems due to lower RDS(on) and guaranteed 4.5 V turn-on, while offering faster switching and tighter thermal control than either alternative.
Availability
IRL3803PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, hot-swap circuits, and LED drivers requiring stable component supply across industrial production cycles.
Supply support for IRL3803PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRL3803PBF belongs to Infineon's HEXFET™ logic-level Power MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained industrial and computing power supplies.
FAQ
Is IRL3803PBF RoHS-compliant and lead-free?
Yes, IRL3803PBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with Pb-free plating on leads and halogen-free molding compound. The "PbF" suffix explicitly denotes lead-free packaging, verified in Infineon's material declaration ID 2021-02-25 Rev. 2.1.
Can IRL3803PBF operate reliably at 100% rated current without forced air cooling?
At 140 A continuous drain current, junction temperature exceeds 175°C without active cooling. Reliable operation at full rated current requires a heatsink achieving ≤0.75 °C/W total thermal resistance from junction to ambient - typically achieved with ≥200 cm² finned aluminum heatsink and thermal interface material.
What is the maximum safe operating frequency for hard-switched applications?
Based on measured tr = 230 ns and tf = 35 ns, plus Qg = 140 nC, the practical hard-switching limit is ~200 kHz for efficiency >90%. Above this, switching losses dominate; soft-switching or synchronous rectification is recommended for higher frequencies.
Does the body diode support continuous bidirectional current in bridge configurations?
The intrinsic body diode is rated for 140 A continuous source current (IS) and 470 A pulsed (ISM), with trr = 120–180 ns and Qrr = 450–680 nC. It supports bidirectional conduction in H-bridges but requires careful layout to minimize LS-induced voltage overshoot during recovery.
IRL3803PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 71A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL3803PBF FAQ
1.How can I place an order for IRL3803PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL3803PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL3803PBF reliable?
The price and inventory of IRL3803PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3803PBF is usually 5 days.
3.What payment methods are accepted for IRL3803PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3803PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL3803PBF?
IRL3803PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL3803PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL3803PBF?
For technical support, including IRL3803PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3803PBF requirements.
6.How does Aetrix verify that IRL3803PBF is sourced from the original manufacturer or authorized distributors?
All IRL3803PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3803PBF meets industry standards.
7.What is the process for return or replacement of IRL3803PBF?
All IRL3803PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3803PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL3803PBF part is unused and in its original packaging.
Return procedure for IRL3803PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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