Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL3803STRRPBF

Part No.:
IRL3803STRRPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL3803STRRPBF.pdf
Description:
MOSFET N-CH 30V 140A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,778

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL3803STRRPBF from Infineon Technologies is a 30 V, 140 A, 3.3 mΩ N-channel HEXFET Power MOSFET in TO-263 (D²Pak) package, optimized for high-efficiency DC-DC conversion and motor control in industrial power supplies and battery-powered tools.

For engineers reviewing the IRL3803STRRPBF datasheet, IRL3803STRRPBF pinout, IRL3803STRRPBF application, or IRL3803STRRPBF equivalent, key selection criteria include RDS(on) at 10 V gate drive, continuous drain current rating, thermal resistance (RθJC), and logic-level gate threshold compatibility with 3.3 V/5 V microcontrollers.

Technical Context

This MOSFET employs Trench technology to achieve low on-resistance and fast switching with minimal gate charge (Qg = 80 nC typical). It features avalanche-rated operation and enhanced body diode recovery performance for synchronous rectification and H-bridge configurations.

The device supports logic-level gate drive (VGS(th) = 1.0–2.0 V), enabling direct interface with standard CMOS outputs without level-shifting circuitry, and exhibits low reverse recovery charge (Qrr = 190 nC) for reduced switching losses in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage for 12 V and 24 V system rails
RDS(on) @ VGS = 10 V3.3 mΩ - Enables <1 W conduction loss at 140 A, critical for high-current POL converters
ID (continuous)140 A - Supports high-power motor drives and server VRMs without parallel devices
Qg80 nC - Reduces gate driver power demand and enables >500 kHz switching in SMPS designs
RθJC0.7°C/W - Allows 100+ W power dissipation with moderate heatsinking in TO-263 package
VGS(th)1.0–2.0 V - Ensures full enhancement with 3.3 V GPIO, eliminating external level shifters

Pinout & Package

Package: TO-263 (D²Pak), surface-mount, single-ended heat sink tab (drain-connected).

Pin/TerminalCircuit RoleDesign Meaning
Tab (exposed pad)DrainPrimary current path and thermal interface; must be soldered to PCB copper pour for thermal management
Lead 1SourceReference node for gate drive and current sensing; connects to power ground plane
Lead 2GateControl input requiring <80 nC charge; sensitive to ESD and layout-induced ringing
Lead 3SourceSecond source connection for low-inductance return path in high-di/dt applications

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at 3.3 V, enabling direct MCU interface without gate driver ICs
Avalanche ratedSpecified UIS energy of 330 mJ ensures robustness against inductive switching transients
Low Qrr body diode190 nC reverse recovery charge minimizes shoot-through risk and loss in synchronous buck stages
Trench process technologyDelivers 3.3 mΩ RDS(on) in TO-263, reducing footprint vs. older planar MOSFETs at same current rating

Applications

Industrial Motor DrivesServer Point-of-Load Converters

Use Scenario: 24 V BLDC motor control in CNC spindles and automated machinery.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling peak currents up to 140 A.

Use Value: 3.3 mΩ RDS(on) limits conduction loss to <0.7 W at 120 A, improving thermal margin and efficiency.

Use Scenario: High-current step-down regulator supplying CPU core voltage in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–600 A multiphase buck converter.

Use Value: Low Qg (80 nC) and Qrr (190 nC) reduce gate drive loss and body diode loss during dead-time transitions.

Battery-Powered Power ToolsTelecom DC-DC Modules

Use Scenario: High-torque drill/driver with 18–40 V Li-ion pack and electronic torque limiting.

IC Role / Device Role / Timing Role: Main power switch in PWM-controlled H-bridge for bidirectional motor control.

Use Value: Avalanche rating (330 mJ) withstands inductive kickback during abrupt current interruption under stall conditions.

Use Scenario: 48 V to 12 V intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 200–300 kHz.

Use Value: RθJC = 0.7°C/W allows 85 W continuous dissipation with 40°C temperature rise, supporting compact module design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRL3803PBFSame die, TO-220 package; RθJC = 1.0°C/W; lower max ID (110 A)Limited to lower-power motor drives and adapters where through-hole mounting is requiredSelect when board space permits TO-220 and thermal budget allows higher junction rise
IPB033N03L30 V, 160 A, 3.3 mΩ, but requires 4.5 V min VGS; Qg = 67 nCBetter suited for 5 V gate drive systems; slightly faster switching but not logic-level compatibleChoose when using 5 V microcontrollers or dedicated gate drivers, prioritizing lower Qg

Compared with IRL3803PBF, the STRRPBF offers superior thermal performance and higher current capability in surface-mount form; versus IPB033N03L, it provides guaranteed 3.3 V logic-level turn-on at the cost of slightly higher Qg, making it optimal for embedded MCU-driven systems.

Availability

IRL3803STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, server point-of-load converters, and battery-powered power tools requiring stable component supply and long-term production continuity.

Supply support for IRL3803STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ logic-level power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained and thermally demanding applications such as motor control and DC-DC conversion.

FAQ

Is IRL3803STRRPBF RoHS-compliant and lead-free?

Yes, IRL3803STRRPBF is RoHS-compliant and lead-free per EU Directive 2011/65/EU. The "PbF" suffix confirms lead-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements for surface-mount assembly.

What is the maximum safe operating temperature for continuous operation?

The maximum junction temperature is 175°C. With RθJC = 0.7°C/W and a 40°C ambient, sustained 140 A operation requires a heatsink or PCB copper area capable of maintaining case temperature ≤105°C to stay within thermal limits.

Can IRL3803STRRPBF replace IRL3803PBF in an existing TO-220 layout?

No - IRL3803STRRPBF uses TO-263 (D²Pak) packaging with different footprint, thermal pad layout, and lead spacing. Direct replacement requires PCB redesign to accommodate the surface-mount outline and exposed drain tab soldering requirements.

Does this MOSFET require a gate resistor for stability in high-frequency switching?

Yes - a 5–10 Ω gate series resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with Ciss (2800 pF) and Qg, especially above 200 kHz. Layout optimization (short gate traces, ground plane under gate loop) remains critical.

IRL3803STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 71A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
5000 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL3803STRRPBF FAQ

1.How can I place an order for IRL3803STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL3803STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL3803STRRPBF reliable?

The price and inventory of IRL3803STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL3803STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL3803STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL3803STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL3803STRRPBF?

IRL3803STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL3803STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL3803STRRPBF?

For technical support, including IRL3803STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL3803STRRPBF requirements.

6.How does Aetrix verify that IRL3803STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL3803STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL3803STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL3803STRRPBF?

All IRL3803STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL3803STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL3803STRRPBF part is unused and in its original packaging.

Return procedure for IRL3803STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL3803STRRPBF Tags

  • IRL3803STRRPBF
  • IRL3803STRRPBF PDF
  • IRL3803STRRPBF Datasheet
  • IRL3803STRRPBF Specifications
  • IRL3803STRRPBF Images
  • Infineon Technologies
  • Infineon Technologies IRL3803STRRPBF
  • Buy IRL3803STRRPBF
  • IRL3803STRRPBF Price
  • IRL3803STRRPBF Distributor
  • IRL3803STRRPBF Supplier
  • IRL3803STRRPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER