Infineon Technologies IRL40B209

Overview

IRL40B209 from Infineon Technologies (formerly International Rectifier) is a 40 V, logic-level N-channel HEXFET® Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and motor drive applications. It delivers 1.0 mΩ typical R_DS(on) at V_GS = 10 V, supports 414 A silicon-limited continuous drain current, and features enhanced body diode dV/dt (2.4 V/ns) and dI/dt capability for robust commutation in BLDC and half-bridge topologies.

For engineers reviewing the IRL40B209 datasheet, IRL40B209 pinout, IRL40B209 application, or IRL40B209 equivalent, this page provides verified technical context on avalanche ruggedness, gate charge (180–270 nC), SOA limits, thermal resistance (0.4 °C/W junction-to-case), and body diode recovery (Q_rr = 46–50 nC, t_rr = 41–42 ns) to support high-efficiency DC/DC converter and OR-ing switch design.

Technical Context

This MOSFET employs a trench-gated, planar-enhanced HEXFET structure with optimized cell pitch and bond-wire interconnects to achieve ultra-low on-resistance while maintaining high avalanche energy rating (E_AS = 730–1420 mJ). Its gate threshold voltage (1.0–2.4 V) ensures reliable turn-on with 3.3 V and 5 V logic drivers.

The device integrates a fast, soft-recovery body diode characterized for 100 A reverse recovery at dI/dt up to 930 A/µs and peak recovery dv/dt of 2.4 V/ns at T_J = 175 °C - enabling stable operation in resonant-mode supplies and synchronous rectifier circuits without external snubbers.

Key Specifications

Pinout & Package

IRL40B209 is housed in a standard through-hole TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless drain is at system ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level N-channel MOSFET applications.

Compared with IRL40B209, IRFB4115PBF trades off avalanche ruggedness and diode speed for slightly lower cost, while STL220N4F7AG improves on-resistance and package inductance but sacrifices thermal performance and drain isolation - making IRL40B209 optimal for thermally constrained, high-reliability motor and OR-ing applications requiring proven 1420 mJ avalanche margin.

Availability

IRL40B209 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and telecom power systems.

Supply support for IRL40B209 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier in 2015.

The StrongIRFET™ product line was engineered specifically for high-current, high-ruggedness switching in motor control and power conversion - emphasizing low R_DS(on), fast body diode recovery, and validated avalanche performance under real-world transient stress.

FAQ

What is the maximum safe continuous drain current for IRL40B209 at 100°C case temperature?

The maximum continuous drain current at T_C = 100 °C is 293 A (silicon-limited) per the Absolute Maximum Ratings table. This value assumes ideal heatsinking and accounts for junction temperature rise limited to 175 °C. At the same temperature, the package-limited current is 195 A due to bond wire constraints - design must respect the lower of the two limits.

Can IRL40B209 be driven directly from a 3.3 V microcontroller GPIO?

Yes - with qualification. Its gate threshold voltage ranges from 1.0 V to 2.4 V, and R_DS(on) is specified down to 1.2 mΩ at V_GS = 4.5 V and I_D = 50 A. At 3.3 V, it will conduct but with elevated on-resistance (~1.6 mΩ typ); full enhancement requires ≥4.5 V. For robust 100+ A operation, a dedicated gate driver is recommended.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode offers 1.2 V forward voltage at 100 A and 25 °C, comparable to 45 V Schottky diodes, but with significantly better thermal coupling to the die. Its 41–42 ns reverse recovery time and 2.4 V/ns dv/dt rating exceed most Schottkys in ruggedness - eliminating need for external snubbers in hard-switched topologies, though conduction loss remains higher than ultra-low-V_F SiC Schottkys.

Is the TO-220AB package lead-free and RoHS-compliant?

Yes - the IRL40B209 is certified lead-free and RoHS-compliant per EU Directive 2011/65/EU, and is halogen-free per IEC 61249-2-21. It meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life and standard reflow profiles without baking.