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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL40B212

Name: IRL40B212
Brand: Infineon Technologies
SKU: IRL40B212
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL40B212

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL40B212.pdf

Description:: MOSFET N-CH 40V 195A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL40B212 from Infineon Technologies (formerly International Rectifier) is a 40 V, logic-level N-channel HEXFET® Power MOSFET in TO-220AB package, rated for 195 A continuous drain current (package-limited), 1.5 mΩ typical R_DS(on) at V_GS = 10 V, and optimized for high-efficiency synchronous rectification in DC/DC converters and half-bridge motor drive stages.

For engineers reviewing the IRL40B212 datasheet, IRL40B212 pinout, IRL40B212 application, or IRL40B212 equivalent, this device is selected for high-current, low-voltage switching where gate drive compatibility with 3.3 V/5 V controllers, avalanche ruggedness, and body diode dI/dt capability are critical - especially in BLDC inverters, OR-ing circuits, and resonant power supplies.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted source bonding to achieve sub-2 mΩ on-resistance while maintaining robust unclamped inductive switching (UIS) performance up to 342 mJ at T_J = 25°C. Its gate threshold voltage (1.0–2.4 V) ensures reliable turn-on with logic-level drivers.

The device features fully characterized dynamic parameters including Q_g = 91 nC (typ), Q_gd = 46 nC (typ), and C_oss = 1050 pF (typ) at V_DS = 25 V - enabling accurate loss modeling in hard-switched and ZVS topologies operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage compatible with 12 V/24 V battery systems and 36 V nominal bus designs.
R_DS(on) max	1.9 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.9 W conduction loss at 100 A, critical for thermal management in high-current PCB layouts.
I_D (package-limited)	195 A @ T_C = 25°C - Determined by leadframe and bond-wire capacity; defines practical current ceiling under heatsink-mounted conditions.
Q_g	91 nC (typ) - Total gate charge directly impacts driver power requirement and switching speed in PWM control loops.
E_AS	342 mJ (single-pulse, T_J = 25°C) - Quantifies energy-handling capability during inductive turn-off transients without failure.
V_SD	1.2 V @ I_S = 100 A, T_J = 25°C - Forward voltage of integrated body diode, relevant for synchronous rectifier dead-time optimization.
R_θJC	0.65 °C/W - Junction-to-case thermal resistance enables precise heatsink sizing when mounted with thermal grease on flat surface.

Pinout & Package

IRL40B212 is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical leadform, and screw-mount compatible footprint. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Source (S)	Main current return path; tied to power ground plane; low-inductance connection required for EMI control.
Pin 2 (Center)	Gate (G)	High-impedance control input; requires low-impedance driver (<2.7 Ω recommended) to minimize switching losses.
Pin 3 (Right)	Drain (D)	High-current output node; internally connected to metal tab; must be electrically isolated from heatsink unless system design permits drain-referenced cooling.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate boosters in 5 V microcontroller or DSP-driven motor control.
Enhanced body diode dI/dt capability	Rated for >950 A/µs recovery - supports fast commutation in BLDC and synchronous rectifier applications without oscillation or shoot-through risk.
Avalanche-rated SOA	Characterized single-pulse E_AS and repetitive EAR curves - enables robust operation in unclamped inductive switching without external snubbers.
Lead-free & RoHS-compliant	Halogen-free construction with matte tin-plated leads - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard reflow assembly.
Thermally optimized package	R_θJC = 0.65 °C/W and flat case surface - delivers 231 W maximum power dissipation at T_C = 25°C with proper heatsinking.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: H-bridge driver for 24 V cordless power tools with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase half-bridge configuration; handles bidirectional current during PWM-controlled direction reversal.

Use Value: 1.5 mΩ R_DS(on) reduces I²R loss by >30% vs. legacy 3.5 mΩ MOSFETs, extending battery runtime and limiting MOSFET temperature rise to <95°C at 100 A.

Use Scenario: Upper-leg switch in 3-phase BLDC inverter for e-bike controller operating at 40 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switching element with bootstrap gate drive; conducts during active PWM phase and blocks reverse EMF during freewheeling.

Use Value: Q_gd/Q_g ratio of 0.50 enables clean Miller plateau transition, minimizing cross-conduction risk during high-dV/dt commutation events.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V → 12 V isolated DC/DC converter delivering 120 A output.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven synchronously with primary-side timing to reduce forward drop and conduction loss.

Use Value: V_SD = 1.2 V at 100 A yields 20% lower conduction loss than 0.5 V Schottky at same current, improving full-load efficiency from 92.1% to 93.7%.

Use Scenario: Redundant 24 V power supply OR-ing diode replacement in telecom shelf power distribution.

IC Role / Device Role / Timing Role: Unidirectional current path selector; conducts only when its input voltage exceeds the bus voltage by >V_GS(th), blocking reverse current during fault or standby.

Use Value: Body diode reverse recovery time (t_rr) = 30 ns at T_J = 25°C minimizes voltage overshoot during hot-swap transitions, eliminating need for external RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40S212	Same die in D2-Pak (TO-263) package; R_DS(on) identical (1.5 mΩ typ), but R_θJA = 40 °C/W (PCB mount) vs. 62 °C/W for TO-220AB.	Better thermal performance on large copper areas; unsuitable for screw-mounted heatsinks or high-vibration environments requiring mechanical stability.	Select IRL40S212 for automated SMT assembly and board-level thermal spreading; retain IRL40B212 for field-serviceable, heatsink-clamped deployments.
STL220N4F7AG	40 V, 220 A, 0.75 mΩ typ R_DS(on); trench-gate process; higher Q_g (125 nC); non-RoHS (lead-containing).	Higher current density but requires stronger gate driver; not compliant with EU RoHS Directive 2011/65/EU or JEDEC J-STD-020 MSL1.	Only consider STL220N4F7AG if absolute minimum R_DS(on) is prioritized over regulatory compliance and driver simplicity.

Compared with IRL40S212, IRL40B212 trades PCB thermal efficiency for mechanical robustness and serviceability; compared with STL220N4F7AG, it sacrifices 0.75 mΩ on-resistance to guarantee RoHS compliance, lower gate charge, and proven avalanche reliability across automotive-grade temperature cycling.

Availability

IRL40B212 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial OEM production ramps and long-life embedded programs.

Supply support for IRL40B212 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification per AEC-Q101 and IEC 60747 standards.

This device belongs to the StrongIRFET™ family - engineered for high-current, low-voltage switching in battery-powered and high-efficiency power conversion systems where logic-level drive, ruggedness, and thermal reliability are mandatory.

FAQ

What is the maximum continuous drain current for IRL40B212 at 100°C case temperature?

The maximum continuous drain current is 179 A at T_C = 100°C and V_GS = 10 V, limited by silicon junction temperature (T_Jmax = 175°C). This value reflects thermal derating from the 195 A rating at 25°C case temperature, using a linear derating factor of 1.5 W/°C.

Can IRL40B212 be used with 3.3 V microcontroller GPIOs without a gate driver?

No - although V_GS(th) starts at 1.0 V, full enhancement (R_DS(on) ≤ 2.4 mΩ) requires V_GS ≥ 4.5 V. At 3.3 V, R_DS(on) rises to ~4.8 mΩ, increasing conduction loss by >150%. A dedicated gate driver (e.g., IR2110, TC4420) is required for reliable operation.

Is the TO-220AB package's metal tab electrically isolated?

No - the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink must be achieved using insulating mounting kits (e.g., mica washer + thermal grease or silicone pad), otherwise the drain will short to chassis ground.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for switching characterization (t_d(on) = 39 ns, t_f = 84 ns). For 100 kHz hard-switching, this value balances switching loss reduction against gate oscillation risk; values below 1.5 Ω require careful PCB layout to avoid ringing.

IRL40B212 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 231W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL40B212 FAQ

1.How can I place an order for IRL40B212 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL40B212 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL40B212 reliable?

The price and inventory of IRL40B212 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL40B212 is usually 5 days.

3.What payment methods are accepted for IRL40B212?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL40B212 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL40B212?

IRL40B212 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL40B212 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL40B212?

For technical support, including IRL40B212 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL40B212 requirements.

6.How does Aetrix verify that IRL40B212 is sourced from the original manufacturer or authorized distributors?

All IRL40B212 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL40B212 meets industry standards.

7.What is the process for return or replacement of IRL40B212?

All IRL40B212 units undergo pre-shipment inspection (PSI). If there is an issue with IRL40B212, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL40B212 part is unused and in its original packaging.

Return procedure for IRL40B212:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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