Infineon Technologies IRL40S212

Overview

IRL40S212 from Infineon Technologies (formerly International Rectifier) is a 40 V, logic-level N-channel HEXFET® Power MOSFET in D2-Pak (TO-263) package, optimized for high-current synchronous rectification and motor drive applications. It delivers 1.5 mΩ typical R_DS(on) at V_GS = 10 V, supports 195 A continuous drain current (package-limited), and features enhanced body diode dV/dt and dI/dt capability for robust BLDC and brushed motor control in battery-powered systems.

For engineers reviewing the IRL40S212 datasheet, IRL40S212 pinout, IRL40S212 application, or IRL40S212 equivalent, key selection criteria include its 40 V V_DS, 1.5 mΩ R_DS(on) at 10 V gate drive, 195 A package-limited current, avalanche energy rating of 790 mJ (E_AS), and D2-Pak thermal performance with R_θJC = 0.65 °C/W - critical for high-efficiency DC/DC converters and half-bridge topologies.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve ultra-low on-resistance while maintaining strong avalanche ruggedness (E_AS = 790 mJ) and dynamic dV/dt immunity. Its gate threshold voltage (1.0–2.4 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting.

The device integrates a fast, soft-recovery body diode (t_rr = 32 ns at 125°C, Q_rr = 28 nC) and exhibits low Crss (790 pF) and Coss eff.(TR) = 1580 pF, supporting high-frequency switching in resonant-mode power supplies and OR-ing applications up to 200 kHz.

Key Specifications

Pinout & Package

IRL40S212 uses the D2-Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Gate (G), Drain (D), and Source (S), arranged in standard G-D-S order when viewed from top with marking side up and tab facing away.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level N-channel MOSFET applications.

Compared with IRL40S212, IRF1404PbF trades 80% higher conduction loss for lower cost and through-hole compatibility, while STL220N4F7AG offers superior R_DS(on) and thermal metrics but lacks documented avalanche ruggedness - making IRL40S212 the preferred choice for unclamped inductive switching in motor drives and OR-ing.

Availability

IRL40S212 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier applications requiring stable component supply across automotive-grade temperature ranges and high-volume production cycles.

Supply support for IRL40S212 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

This part belongs to the StrongIRFET™ family of logic-level HEXFET® MOSFETs, engineered specifically for high-current, high-efficiency switching in battery-powered motor control and power conversion systems.

FAQ

What is the maximum continuous drain current for IRL40S212 under real-world PCB mounting?

The package-limited continuous drain current is 195 A at T_C = 25°C, assuming direct heatsink mounting with greased interface (R_θCS = 0.50 °C/W). On a 1-inch-square FR-4 PCB, derating applies: at T_A = 70°C, usable current drops to ~65 A due to R_θJA = 40 °C/W. Thermal design must account for both junction-to-case and case-to-heatsink paths.

Can IRL40S212 be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.4 V, and it achieves 1.9 mΩ R_DS(on) at V_GS = 4.5 V. At 3.3 V, R_DS(on) rises to ~3.2 mΩ (extrapolated from Fig 1), delivering ~120 A with acceptable loss in pulsed operation. For continuous 195 A, 4.5 V or higher gate drive is recommended.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode provides V_SD = 1.2 V at 100 A and 25°C - higher forward drop than a 40 V Schottky (~0.55 V), but with superior reverse recovery (t_rr = 32 ns, Q_rr = 28 nC) and dV/dt immunity (6.0 V/ns). In ZVS circuits, its soft recovery reduces EMI and eliminates need for external snubbers, offsetting the V_F penalty.

Is IRL40S212 suitable for paralleling multiple devices to increase current capacity?

Yes - its positive temperature coefficient of R_DS(on) (Fig 6 shows 1.8× increase from 25°C to 175°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared source inductance <10 nH. Derate total current by 15% for thermal coupling effects in dense layouts.