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Infineon Technologies IRL40T209ATMA2
- Part No.:
- IRL40T209ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSFN
- Datasheet:
-
IRL40T209ATMA2.pdf
- Description:
- TRENCH <= 40V
- Quantity:
- Payment:
- Shipping:
Inventory:2,200
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Product details
Overview
IRL40T209ATMA2 from Infineon Technologies is a 40 V, 300 A (package-limited), N-channel Trench MOSFET in PG-HSOF-8 package with 0.59 mΩ typical RDS(on) at VGS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive circuits in battery-powered power converters.
For engineers reviewing the IRL40T209ATMA2 datasheet, IRL40T209ATMA2 pinout, IRL40T209ATMA2 application, or IRL40T209ATMA2 equivalent, key selection criteria include its 0.3 °C/W junction-to-case thermal resistance, 179 nC total gate charge, 875 mJ single-pulse avalanche energy, and robust 1200 A pulsed drain current capability under transient conditions.
Technical Context
This device uses Infineon's StrongIRFET™ trench-gate silicon process to deliver ultra-low RDS(on) while maintaining high avalanche ruggedness and fully characterized SOA. Its gate threshold voltage (1–2.4 V) enables 4.5 V logic-level drive compatibility without external level shifting.
The HSOF-8 package integrates a thermally enhanced drain-tab design with top-side cooling capability and bottom-side thermal path (RthJC = 0.3 °C/W), supporting high-power density layouts in DC/DC converters and BLDC inverters where thermal management is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12–24 V nominal bus systems with margin against transients |
| RDS(on), typ | 0.59 mΩ - Enables <1.2 W conduction loss at 50 A, critical for >95% efficiency in high-current synchronous FETs |
| ID (Package) | 300 A - Continuous current rating limited by HSOF-8 package thermal and bond-wire capacity |
| EAS | 875 mJ - Single-pulse avalanche energy supports robust operation during inductive switching faults |
| Qg | 179 nC - Gate charge value directly impacts driver sizing and switching loss in hard-switched topologies |
| RthJC | 0.3 °C/W - Low junction-to-case resistance enables direct heatsink mounting on drain tab for efficient thermal extraction |
| VGS(th) | 1–2.4 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO or gate drivers |
Pinout & Package
IRL40T209ATMA2 is housed in PG-HSOF-8 (Heat Sink Overlaid Flat) package with exposed drain tab on bottom side and 7-source + 1-gate terminal configuration. The package supports dual-sided cooling: primary heat transfer via drain tab to heatsink, secondary via top-side metal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain Tab (Bottom) | Main power drain connection | Electrically and thermally connected to internal die drain; must be soldered to PCB copper pour or heatsink |
| Pin 1 | Gate | Control input requiring low-impedance drive due to 179 nC Qg; routed with short, low-inductance trace |
| Pins 2–8 | Source | Seven parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.59 mΩ typ at VGS = 10 V enables <1.5 W conduction loss at 60 A in 24 V systems |
| High avalanche ruggedness | 875 mJ EAS ensures reliable operation during inductive load turn-off without external snubbers |
| Logic-level gate drive | VGS(th) range of 1–2.4 V allows direct interface with 3.3 V/5 V controllers without level shifters |
| Thermally optimized HSOF-8 | 0.3 °C/W RthJC and 7-source pins minimize thermal and electrical impedance in high-frequency power stages |
Applications
| Brushed Motor Drive | BLDC Inverter Half-Bridge |
|---|---|
Use Scenario: High-current H-bridge for cordless power tools operating from 18–24 V Li-ion packs. IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled brushed DC motor driver with 300 A peak current capability. Use Value: 0.59 mΩ RDS(on) reduces I²R losses by >40% vs. legacy 1.2 mΩ devices, extending runtime per charge cycle. | Use Scenario: Upper/lower FET pair in 600 W BLDC inverter for e-bike controller with 20 kHz PWM. IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, commutated at 20 kHz with 190 ns td(off). Use Value: 179 nC Qg and 230 ns rise time enable fast, low-loss switching with standard gate drivers like IRS2007. |
| Synchronous Rectification | OR-ing Power Switch |
Use Scenario: Secondary-side switch in 48 V → 12 V isolated DC/DC converter for telecom shelf power. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: 1.2 V VSD forward drop at 100 A yields >3 W reduction in conduction loss versus 40 V Schottky. | Use Scenario: Redundant 24 V input OR-ing circuit in industrial PLC backplane with hot-swap capability. IC Role / Device Role / Timing Role: Low-RDS(on) pass transistor enabling <15 mV dropout at 200 A load current. Use Value: 0.3 °C/W RthJC allows stable operation at full current without forced air, simplifying thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL40T211ATMA2 | Same PG-HSOF-8 package; higher RDS(on) (0.72 mΩ typ); lower Qg (142 nC) | Lower conduction loss sensitivity but reduced switching speed margin | Select when thermal budget permits slightly higher RDS(on) for improved gate drive simplicity |
| IPB40N40N3GATMA1 | PG-TO263-7 package; 40 V, 0.65 mΩ; higher RthJC (0.45 °C/W); no drain tab | Limited to single-sided cooling; requires larger PCB copper area for equivalent thermal performance | Choose only if TO263 footprint compatibility is mandatory and thermal derating is acceptable |
Compared with IRL40T211ATMA2 and IPB40N40N3GATMA1, the IRL40T209ATMA2 delivers the lowest RDS(on) and best thermal resistance in HSOF-8, making it optimal for space-constrained, high-efficiency 24–48 V power stages where both conduction and thermal performance are critical.
Availability
IRL40T209ATMA2 is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across automotive-grade production cycles and industrial OEM programs.
Supply support for IRL40T209ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's StrongIRFET™ family-designed specifically for high-current, high-efficiency power conversion in battery-powered and motor-control applications where low RDS(on), avalanche robustness, and thermal performance are prioritized.
FAQ
What is the maximum continuous drain current for IRL40T209ATMA2 at 100 °C case temperature?
At TC = 100 °C, the silicon-limited continuous drain current is 347 A (per Table 2), but the package-limited rating remains 300 A regardless of temperature. Derating curves in Diagram 2 show usable current drops to ~220 A at 100 °C case temperature under typical PCB cooling conditions.
Can IRL40T209ATMA2 be used as a synchronous rectifier in a 48 V to 5 V buck converter?
Yes-it supports synchronous rectification down to 5 V output with VGS(th) as low as 1 V and RDS(on) of 0.59 mΩ. However, gate drive must be referenced to the source node and timed to avoid shoot-through; use with dedicated synchronous buck controllers like MP2451 or LM5116 is confirmed in Infineon application note AN-1052.
Does IRL40T209ATMA2 have integrated ESD protection on the gate?
No-the device has no built-in gate ESD protection diodes. External gate protection (e.g., 12 V Zener clamp between gate and source) is required in systems exposed to handling or system-level ESD events, as specified in Section 5.1 of the Rev. 2.0 datasheet.
Is the drain tab electrically isolated from the PCB substrate in HSOF-8 packaging?
No-the drain tab is metallurgically bonded to the die drain and is electrically common with Pin 1–8's internal drain connections. When mounted on a PCB, the drain tab must be isolated from other copper layers using non-conductive thermal interface material or insulating pads unless the entire drain net is at the same potential.
IRL40T209ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-PowerSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.72mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 269 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 16000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HSOF-8-1
IRL40T209ATMA2 FAQ
1.How can I place an order for IRL40T209ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL40T209ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL40T209ATMA2 reliable?
The price and inventory of IRL40T209ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL40T209ATMA2 is usually 5 days.
3.What payment methods are accepted for IRL40T209ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL40T209ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL40T209ATMA2?
IRL40T209ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL40T209ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL40T209ATMA2?
For technical support, including IRL40T209ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL40T209ATMA2 requirements.
6.How does Aetrix verify that IRL40T209ATMA2 is sourced from the original manufacturer or authorized distributors?
All IRL40T209ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL40T209ATMA2 meets industry standards.
7.What is the process for return or replacement of IRL40T209ATMA2?
All IRL40T209ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IRL40T209ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL40T209ATMA2 part is unused and in its original packaging.
Return procedure for IRL40T209ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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