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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL520NPBF

Name: IRL520NPBF
Brand: Infineon Technologies
SKU: IRL520NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL520NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL520NPBF.pdf

Description:: MOSFET N-CH 100V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,400

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Product details

Overview

IRL520NPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 5.5 A, N-channel enhancement-mode MOSFET in TO-220AB package with R_DS(on) = 0.27 Ω at V_GS = 10 V and 0.44 Ω at V_GS = 5 V, optimized for low-voltage DC-DC conversion and motor control in industrial power supplies.

For engineers reviewing the IRL520NPBF datasheet, IRL520NPBF pinout, IRL520NPBF application, or IRL520NPBF equivalent, key selection criteria include gate threshold voltage (V_GS(th) = 1.0–2.0 V), drain-source breakdown voltage (V_BR(DSS) = 100 V), continuous drain current (I_D = 5.5 A), thermal resistance (R_θJA = 62 °C/W), and lead-free TO-220AB packaging compliance.

Technical Context

This HEXFET power MOSFET uses planar stripe cell structure and optimized gate oxide for fast switching with low gate charge (Q_g = 16 nC typical) and low output capacitance (C_oss = 290 pF at V_DS = 25 V). It operates in enhancement mode with zero gate current and supports logic-level drive down to 4.5 V.

Designed for unidirectional power switching, it features avalanche-rated ruggedness (E_AS = 45 mJ), integrated body diode with t_rr = 50 ns, and specified safe operating area (SOA) up to 100 µs at 100 V and 5.5 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	100 V - Withstands up to 100 V drain-to-source before avalanche conduction begins.
R_DS(on) @ V_GS=10 V	0.27 Ω - Enables <1.5 W conduction loss at 5.5 A, suitable for 12 V/24 V systems.
R_DS(on) @ V_GS=5 V	0.44 Ω - Supports direct microcontroller GPIO drive without level-shifting circuitry.
V_GS(th)	1.0–2.0 V - Ensures reliable turn-on with standard logic outputs and low-power controllers.
Q_g	16 nC - Reduces gate driver power demand and enables >100 kHz PWM operation.
P_D @ T_C=25°C	41 W - Delivers sustained 5.5 A current with heatsink mounting on PCB copper pour or external heatsink.

Pinout & Package

IRL520NPBF is housed in a lead-free TO-220AB package with isolated tab (drain-connected), standardized for through-hole mounting and heatsink attachment. Thermal pad is electrically connected to Drain (Pin 2 & 4).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Controls channel conduction; requires ≤±20 V drive; high-impedance input (nA leakage).
2	Drain	Main power output node; electrically tied to metal tab; must be isolated from heatsink unless referenced to same potential.
3	Source	Power return path and reference for gate drive; common connection point for load and controller ground.
4	Drain	Second drain terminal for enhanced current handling and lower inductance routing; paralleled internally with Pin 2.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in microcontroller-based designs.
Avalanche energy rating	E_AS = 45 mJ - withstands repetitive inductive switching stress without derating in relay/snubberless solenoid drivers.
Low gate charge	Q_g = 16 nC - reduces switching losses and driver component count in 50–200 kHz SMPS stages.
Lead-free and RoHS-compliant	"PBF" suffix indicates Pb-free plating and halogen-free molding compound - meets IPC/JEDEC J-STD-020 reflow requirements.

Applications

Industrial Motor Control

DC-DC Converter Primary Switch

Use Scenario: Driving 24 V brushed DC motors in PLC I/O modules with PWM speed regulation.

IC Role / Device Role / Timing Role: Low-side power switch controlling motor current path; switched at 1–20 kHz with dead-time managed by MCU.

Use Value: R_DS(on) = 0.44 Ω at 5 V ensures <1.3 W loss at 5.5 A, enabling compact heatsink-less design in sealed enclosures.

Use Scenario: High-efficiency buck converter stage stepping 48 V input to 12 V/3 A for embedded system rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in non-isolated buck topology; driven by dedicated gate controller.

Use Value: Q_g = 16 nC and C_oss = 290 pF enable 150 kHz operation with <5% duty-cycle loss and minimal EMI.

LED Constant-Current Driver

Automated Test Equipment Load Switch

Use Scenario: Precision constant-current sink for high-brightness LED strings in factory lighting fixtures.

IC Role / Device Role / Timing Role: Current-regulating pass element in analog feedback loop with op-amp and sense resistor.

Use Value: V_GS(th) tolerance (1.0–2.0 V) allows stable biasing across temperature; SOA supports 100 ms overloads during hot-plug events.

Use Scenario: Programmable power domain enable/disable in ATE mainframe backplane with 100 V isolation requirement.

IC Role / Device Role / Timing Role: High-voltage, low-leakage power switch isolating DUT supply rail; controlled via optocoupler-isolated GPIO.

Use Value: R_DS(on) stability over -55°C to +175°C ensures consistent on-resistance in environmental test chambers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 0.022 Ω @ 10 V (lower), V_BR(DSS) = 60 V (reduced), Q_g = 55 nC (higher)	Better for 5–12 V systems; unsuitable for 48 V bus applications due to lower breakdown rating	Select when higher current (55 A) and lower R_DS(on) are prioritized over voltage margin and gate drive efficiency.
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V (lower), V_BR(DSS) = 55 V (lower), V_GS(th) = 2–4 V (higher threshold)	Requires stronger gate drive; limited to ≤40 V circuits; faster switching but less robust in avalanche	Prefer for cost-sensitive 24 V motor drives where 55 V rating suffices and gate drive voltage ≥5 V is guaranteed.

Compared with STP55NF06L and IRFZ44NPBF, IRL520NPBF offers superior 100 V breakdown margin and lowest gate charge among 5–6 A logic-level MOSFETs, making it optimal for 36–48 V industrial power switching where reliability under transient overvoltage and efficient microcontroller drive are critical.

Availability

IRL520NPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter primary switching, LED constant-current drivers, and automated test equipment load switching requiring stable component supply and long-term manufacturability.

Supply support for IRL520NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

The IRL520NPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered for high-reliability, low-voltage switching in industrial automation, power supplies, and embedded power systems.

FAQ

What is the maximum continuous drain current for IRL520NPBF at 100°C case temperature?

The maximum continuous drain current (I_D) is derated to 3.6 A at T_C = 100°C per the Safe Operating Area curve in the official datasheet. This accounts for thermal limits of the TO-220AB package and internal silicon junction temperature constraints. Operation above this value requires active cooling or pulse-width limitation to maintain T_J ≤ 175°C.

Can IRL520NPBF be used in avalanche mode repeatedly?

Yes - IRL520NPBF is fully rated for repetitive avalanche operation with E_AS = 45 mJ at T_J = 25°C. Its ruggedness is validated per JEDEC JESD24-11, supporting inductive load switching in solenoid and relay drivers without external snubbers, provided single-pulse energy remains within spec and average power stays within P_D limits.

Is the metal tab electrically isolated in IRL520NPBF?

No - the metal tab is internally connected to the Drain (Pins 2 and 4). When mounted to a heatsink, electrical isolation (e.g., mica washer or silicone pad) is mandatory unless the heatsink is referenced to the drain potential. Failure to isolate may cause short-circuit or ground loop issues in low-side switch configurations.

Does IRL520NPBF support 3.3 V logic-level gate drive?

Not fully - while V_GS(th) starts at 1.0 V, R_DS(on) rises sharply below 4.5 V. At 3.3 V, R_DS(on) exceeds 1.2 Ω, increasing conduction loss >4×. For reliable enhancement, ≥4.5 V gate drive is required; use a level shifter or gate driver if interfacing with 3.3 V MCUs.

IRL520NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL520NPBF FAQ

1.How can I place an order for IRL520NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL520NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL520NPBF reliable?

The price and inventory of IRL520NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL520NPBF is usually 5 days.

3.What payment methods are accepted for IRL520NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL520NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL520NPBF?

IRL520NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL520NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL520NPBF?

For technical support, including IRL520NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL520NPBF requirements.

6.How does Aetrix verify that IRL520NPBF is sourced from the original manufacturer or authorized distributors?

All IRL520NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL520NPBF meets industry standards.

7.What is the process for return or replacement of IRL520NPBF?

All IRL520NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL520NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL520NPBF part is unused and in its original packaging.

Return procedure for IRL520NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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