Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRL530NPBF

Part No.:
IRL530NPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL530NPBF.pdf
Description:
MOSFET N-CH 100V 17A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,546

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRL530NPBF from Infineon Technologies is a 100 V, 17 A, 0.11 Ω (at VGS = 10 V) N-channel enhancement-mode HEXFET power MOSFET in TO-220AB package, optimized for low-voltage DC-DC conversion and motor control switching applications.

For engineers reviewing the IRL530NPBF datasheet, IRL530NPBF pinout, IRL530NPBF application, or IRL530NPBF equivalent, key selection criteria include RDS(on) at 5 V gate drive, SOA robustness in linear mode, avalanche energy rating (EAS = 140 mJ), and thermal resistance (RθJC = 1.2 °C/W).

Technical Context

This MOSFET uses planar stripe cell technology with optimized gate oxide thickness to achieve enhanced transconductance and reduced gate charge (Qg = 38 nC). Its threshold voltage (VGS(th)) ranges from 1.0 V to 2.0 V, enabling reliable turn-on with 3.3 V or 5 V logic-level drivers.

The device features an integrated avalanche-rated structure and specified unclamped inductive switching (UIS) capability. Its drain-source diode exhibits soft recovery characteristics with reverse recovery time (trr) of 120 ns and Qrr of 120 nC at IF = 17 A.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - maximum blocking voltage for 24–48 V bus systems
ID (continuous)17 A @ TC = 25 °C - supports medium-power switching up to ~200 W with heatsink
RDS(on)0.11 Ω @ VGS = 10 V - enables <1.9 W conduction loss at 4.2 A RMS
Qg38 nC - determines gate drive power requirement and switching speed
EAS140 mJ - specifies single-pulse avalanche energy handling without failure
RθJC1.2 °C/W - defines junction-to-case thermal resistance for heatsink sizing

Pinout & Package

IRL530NPBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), rated for 175 °C maximum junction temperature and compatible with standard TO-220 heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives voltage-controlled signal; requires ≤ ±20 V max; high input impedance
2 (Drain)High-side current pathConnected to load supply rail; electrically tied to metal tab for thermal conduction
3 (Source)Reference nodeCommon return for gate drive and load current; establishes VGS reference
4 (Drain)Secondary drain connectionParallel drain path to reduce package inductance and improve current sharing

Key Features

FeatureDesign Value
Logic-level gate driveGuaranteed turn-on with 4.5 V VGS, enabling direct interface with microcontrollers
100% UIS testedEach unit validated for unclamped inductive switching reliability per JEDEC JESD22-A116
Lead-free and RoHS compliantMeets EU Directive 2011/65/EU; "P" suffix denotes Pb-free plating and packaging
Low gate charge38 nC total gate charge reduces driver losses and improves efficiency in high-frequency PWM

Applications

DC Motor ControlSwitching Power Supply

Use Scenario: H-bridge driver for 24 V brushed DC motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling motor current direction and braking via PWM.

Use Value: 0.11 Ω RDS(on) limits I²R loss to <0.8 W at 2.7 A continuous, reducing heatsink size.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output flyback converter.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency.

Use Value: 140 mJ EAS withstands transient overvoltage during transformer reset without failure.

Solenoid DriverBattery Protection Circuit

Use Scenario: 36 V solenoid actuator in HVAC valve control with 100 ms on-time pulses.

IC Role / Device Role / Timing Role: High-current pulsed switch with controlled turn-on to limit inrush di/dt.

Use Value: 17 A ID rating supports 15 A peak solenoid current; trr = 120 ns minimizes cross-conduction loss.

Use Scenario: Overcurrent protection switch in 24 V LiFePO₄ battery pack management.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical fuse or PTC, enabling fast trip response.

Use Value: 1.2 °C/W RθJC allows accurate thermal shutdown detection within 10 °C of junction rise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP16NF10RDS(on) = 0.18 Ω @ 10 V; higher threshold (2–4 V); lower ID (16 A)Less suitable for 3.3 V logic drive; requires higher gate voltage for full enhancementPrefer when cost sensitivity outweighs RDS(on) and gate drive margin requirements
IRFZ44NPBFRDS(on) = 0.028 Ω @ 10 V; lower VDS (55 V); same TO-220AB packageNot rated for 100 V bus systems; limited to ≤40 V applicationsSelect only for 24 V systems where ultra-low conduction loss is critical and voltage headroom is sufficient

Compared with STP16NF10 and IRFZ44NPBF, IRL530NPBF uniquely balances 100 V rating, logic-level gate compatibility, and 0.11 Ω conduction resistance-making it optimal for 24–48 V industrial switching where both voltage margin and 5 V MCU interfacing matter.

Availability

IRL530NPBF is available at Aetrix Electronics and suitable for DC motor control, switching power supplies, solenoid drivers, and battery protection circuits requiring stable component supply across production lifecycles.

Supply support for IRL530NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRL530NPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, designed specifically for efficient, low-voltage switching in industrial automation, power tools, and embedded power conversion systems.

FAQ

Is IRL530NPBF suitable for 3.3 V microcontroller gate drive?

Yes. With a guaranteed VGS(th) as low as 1.0 V and RDS(on) = 0.16 Ω at VGS = 4.5 V, the IRL530NPBF fully enhances using 3.3 V logic outputs. However, for lowest RDS(on), 5 V or higher gate drive is recommended to achieve 0.11 Ω.

What is the maximum safe operating area (SOA) for linear-mode operation?

The IRL530NPBF SOA curve is defined up to 100 V and 17 A at TC = 25 °C, with derating to 8.5 A at 100 V when TC = 100 °C. It supports short-duration linear operation (e.g., active current limiting) but is not intended for sustained analog amplification.

Does the TO-220AB package have an electrically isolated tab?

No. Pin 2 and Pin 4 are internally connected to the drain and to the metal tab. The tab is not electrically isolated and must be insulated from heatsinks unless the heatsink is referenced to the drain potential.

How does the "P" suffix affect soldering profile and reliability?

The "P" suffix indicates lead-free (Pb-free) construction per JEDEC J-STD-020. It requires peak reflow temperatures of 260 °C (vs. 240 °C for SnPb), with strict ramp rate control. Reliability testing confirms equivalent thermal cycling and moisture sensitivity (MSL 1) performance versus legacy versions.

IRL530NPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
100mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
800 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
79W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL530NPBF FAQ

1.How can I place an order for IRL530NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL530NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL530NPBF reliable?

The price and inventory of IRL530NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530NPBF is usually 5 days.

3.What payment methods are accepted for IRL530NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL530NPBF?

IRL530NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL530NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL530NPBF?

For technical support, including IRL530NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530NPBF requirements.

6.How does Aetrix verify that IRL530NPBF is sourced from the original manufacturer or authorized distributors?

All IRL530NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530NPBF meets industry standards.

7.What is the process for return or replacement of IRL530NPBF?

All IRL530NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL530NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL530NPBF part is unused and in its original packaging.

Return procedure for IRL530NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRL530NPBF Tags

  • IRL530NPBF
  • IRL530NPBF PDF
  • IRL530NPBF Datasheet
  • IRL530NPBF Specifications
  • IRL530NPBF Images
  • Infineon Technologies
  • Infineon Technologies IRL530NPBF
  • Buy IRL530NPBF
  • IRL530NPBF Price
  • IRL530NPBF Distributor
  • IRL530NPBF Supplier
  • IRL530NPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER