Infineon Technologies IRL5602

Overview

IRL5602S from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, with -24 A continuous drain current at TC = 25°C and 175°C maximum junction temperature. It is designed for high-efficiency DC-DC conversion, load switching, and reverse polarity protection in industrial power supplies and motor control circuits.

For engineers reviewing the IRL5602S datasheet, IRL5602S pinout, IRL5602S application, or IRL5602S equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), fast switching performance (td(on) = 9.7 ns, tf = 84 ns), rugged unclamped inductive avalanche rating (EAS = 290 mJ), and surface-mount thermal capability (RθJC = 2.0 °C/W).

Technical Context

The IRL5602S employs fifth-generation HEXFET processing to achieve low on-resistance per die area while maintaining robust avalanche energy handling (EAS = 290 mJ, EAR = 7.5 mJ). Its P-channel topology enables high-side switching without level-shifting circuitry, and its dynamic dv/dt rating (-0.81 V/ns) supports stable operation in noisy power environments.

Designed for logic-level drive, it delivers full conduction at VGS = -4.5 V and remains functional down to VGS = -2.5 V (RDS(on) = 0.075 Ω). The integrated body diode features trr = 58–88 ns and Qrr = 54–81 nC, enabling efficient synchronous rectification and flyback recovery in buck and half-bridge topologies.

Key Specifications

Pinout & Package

D2Pak (TO-263AB) package: surface-mount power package with exposed drain pad for thermal conduction; 3-pin configuration; JEDEC-compliant footprint per AN-994; 10.90 mm × 15.42 mm outline; 2.79 mm height; flange-mounted for heatsink interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9530NPbF and Si2301DS, the IRL5602S uniquely balances logic-level drive, 24 A current capability, and 2.0 °C/W thermal resistance in a surface-mount package-making it irreplaceable for high-current, space-constrained industrial power switching where both efficiency and ruggedness are mandatory.

Availability

IRL5602S is available at Aetrix Electronics and suitable for industrial DC-DC converters, reverse polarity protection circuits, and motor driver half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRL5602S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, specializing in high-efficiency, rugged semiconductor solutions for industrial, automotive, and computing markets.

The HEXFET® product line-including the IRL5602S-was engineered specifically for high-current, surface-mount power switching applications demanding low RDS(on), fast switching, and guaranteed avalanche energy handling.

FAQ

What is the maximum allowable gate-to-source voltage for the IRL5602S?

The absolute maximum VGS rating is ±8.0 V. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive should be clamped to -4.5 V to -8.0 V for turn-on and 0 V for turn-off. Transient overshoot above ±8.0 V-even for nanoseconds-must be suppressed using Zener clamps or gate resistors matched to driver output impedance.

Can the IRL5602S be used in parallel configurations?

Yes, but only with careful layout and gate drive matching. The device's negative temperature coefficient of RDS(on) supports current sharing, but unequal source inductance or gate resistance causes dynamic imbalance. Use individual 2.2 Ω gate resistors, Kelvin source connections, and symmetrical PCB routing to ensure <10% current mismatch at full load.

Does the IRL5602S require a heatsink in standard FR-4 PCB mounting?

At 12 A continuous current, yes-a minimum 25 cm² copper pour (2 oz Cu) is required to maintain TJ < 125°C. With RθJA = 40 °C/W (PCB mounted), power dissipation of 6.0 W (ID² × RDS(on)) raises junction temperature by 240°C above ambient-exceeding rating. A heatsink or thermal pad to chassis is mandatory for sustained >5 A operation.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has VSD = -1.4 V at -12 A and trr = 58 ns, offering lower forward drop than silicon PN diodes but higher than 40 V Schottky diodes (~0.45 V). Its Qrr is significantly lower than fast recovery diodes, reducing switching loss-but it cannot match Schottky EMI performance at >1 MHz. Use only where synchronous rectification or compact integration outweighs ultra-low VF requirements.