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Infineon Technologies IRL5602L
- Part No.:
- IRL5602L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRL5602L.pdf
- Description:
- MOSFET P-CH 20V 24A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:2,819
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Product details
Overview
IRL5602L from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, with -24 A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, 175°C maximum junction temperature, and fast switching for high-efficiency DC-DC conversion and load switching.
For engineers reviewing the IRL5602L datasheet, IRL5602L pinout, IRL5602L application, or IRL5602L equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), low on-resistance at -4.5 V, rugged unclamped inductive switching capability (EAS = 290 mJ), and thermal performance (RθJC = 2.0 °C/W) in surface-mount power designs.
Technical Context
This P-channel MOSFET operates as a high-side load switch or synchronous rectifier in buck converters and battery protection circuits. Its negative threshold voltage enables direct interface with 3.3 V or 5 V logic controllers without level-shifting, while its low RDS(on) minimizes conduction loss in high-current paths up to -24 A.
The device integrates a robust body diode with trr = 58–88 ns and Qrr = 54–81 nC, supporting fast reverse recovery in hard-switched topologies. Its dv/dt rating of -0.81 V/ns and full avalanche qualification ensure reliability under transient overvoltage and inductive turn-off stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | -20 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12 V automotive and industrial bus applications. |
| RDS(on) | 0.042 Ω @ VGS = -4.5 V, ID = -12 A - Enables <0.6 W conduction loss at 12 A, critical for thermally constrained PCB-mounted designs. |
| ID (TC = 25°C) | -24 A - Continuous drain current rating at case temperature 25°C; supports high-current load switching without external heatsink in moderate airflow. |
| EAS | 290 mJ - Single-pulse avalanche energy; allows reliable operation during inductive load turn-off without snubber networks. |
| Qg | 44 nC - Total gate charge; determines driver strength requirement and switching loss in PWM frequencies up to 500 kHz. |
| TJ Range | -55°C to +175°C - Extended junction temperature range supports under-hood automotive and industrial ambient conditions. |
Pinout & Package
D2Pak (TO-263AB) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring; 3-pin configuration with 2.54 mm lead pitch and 15.49 mm × 10.16 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 – Gate | Control electrode | Accepts logic-level negative voltage (-2.5 V to -8 V); low input capacitance (Ciss = 1460 pF) reduces driver loading. |
| 2 – Drain | High-side power terminal | Internally connected to exposed metal tab; primary thermal path to PCB copper pour or heatsink. |
| 3 – Source | Reference node / return path | Connected to system ground or supply rail; carries full load current and supports body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = -0.7 to -1.0 V enables direct control from 3.3 V microcontrollers without gate driver ICs. |
| Low RDS(on) at -4.5 V | 0.042 Ω ensures <0.6 W conduction loss at 12 A, reducing thermal design burden in compact layouts. |
| Full avalanche rating | 290 mJ single-pulse energy and -12 A avalanche current support robustness in unclamped inductive switching. |
| Fast body diode | trr = 58–88 ns and Qrr = 54–81 nC minimize reverse recovery loss in synchronous rectification. |
| 175°C operation | Extended TJ max allows deployment in high-ambient environments such as engine control units and motor drives. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
Use Scenario: High-side switching of 12 V solenoids, lamps, and relays in vehicle door modules and seat controls. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated body diode for inductive kickback clamping. Use Value: Eliminates need for external flyback diode; RDS(on) ≤ 0.042 Ω limits self-heating during 20 A peak loads. | Use Scenario: Isolated 24 V DC output stage driving valves and actuators in programmable logic controller racks. IC Role / Device Role / Timing Role: High-side power switch controlled by optocoupled logic signals; handles repetitive 10 A pulsed loads. Use Value: Avalanche rating absorbs inductive transients without derating; 175°C TJ supports operation inside sealed enclosures. |
| Server VRM High-Side Switch | Battery Protection Circuit |
Use Scenario: Synchronous rectifier in multiphase 12 V → 1 V buck converters powering CPU/GPU cores. IC Role / Device Role / Timing Role: Fast-turning P-channel switch replacing Schottky diodes to reduce conduction loss and improve efficiency. Use Value: Qg = 44 nC and trr ≤ 88 ns enable efficient operation at 300–500 kHz switching frequency with minimal gate drive loss. | Use Scenario: Reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs (8.4 V nominal). IC Role / Device Role / Timing Role: Back-to-back P-channel configuration for bidirectional blocking; gate driven by protection IC. Use Value: Low VGS(th) ensures reliable turn-on with 3.3 V protection IC outputs; RDS(on) stability over -40°C to +85°C maintains accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | V(BR)DSS = -100 V, RDS(on) = 0.3 Ω @ VGS = -10 V, higher gate charge (Qg = 70 nC) | Designed for higher-voltage linear regulation; unsuitable for 12 V logic-level drive | Select only when >60 V blocking is required and gate drive ≥10 V is available. |
| SI2305DS-T1-E3 | V(BR)DSS = -20 V, RDS(on) = 0.055 Ω @ VGS = -4.5 V, SOT-23 package (0.5 W PD) | Lower power dissipation limit; not suitable for >3 A continuous loads | Use only in space-constrained low-current applications where D2Pak thermal mass is unnecessary. |
Compared with IRF9530NPbF and SI2305DS-T1-E3, the IRL5602L uniquely balances -20 V rating, logic-level drive, 24 A current capability, and D2Pak thermal performance-making it optimal for high-current, surface-mount, 12 V system switching where both efficiency and ruggedness are required.
Availability
IRL5602L is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC output stages, server VRM high-side switching, and battery protection circuits requiring stable component supply across long production lifecycles.
Supply support for IRL5602L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, known for HEXFET® technology, high-reliability discrete semiconductors, and application-focused power solutions for industrial and automotive markets.
The IRL5602L belongs to the logic-level P-channel HEXFET® family, engineered specifically for high-efficiency, high-current switching in 3.3 V/5 V-controlled systems where low gate drive voltage and rugged avalanche performance are mandatory.
FAQ
What is the maximum continuous drain current for IRL5602L at 100°C case temperature?
The IRL5602L supports -17 A continuous drain current at TC = 100°C with VGS = -4.5 V. This derating reflects thermal limitations of the D2Pak package and ensures junction temperature remains within the -55°C to +175°C operational range under steady-state conditions.
Does IRL5602L require a gate resistor for ESD protection or switching control?
A gate resistor (typically 10–100 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, especially in high-di/dt applications. While not required for ESD protection (IGSS leakage is ±500 nA), it improves noise immunity and prevents accidental turn-on due to capacitive coupling.
Can IRL5602L be used in parallel with identical devices for higher current handling?
Yes-its positive RDS(on) temperature coefficient (-0.013 V/°C for V(BR)DSS, implying self-balancing behavior) supports current sharing in paralleled configurations. However, matched layout symmetry, individual gate resistors, and thermal coupling must be maintained to ensure uniform current distribution and avoid thermal runaway.
Is the body diode of IRL5602L suitable for reverse recovery in synchronous rectification?
Yes-the body diode has trr = 58–88 ns and Qrr = 54–81 nC at IF = -12 A, making it suitable for synchronous rectification in 100–500 kHz DC-DC converters. Its soft recovery characteristic minimizes voltage overshoot and EMI compared to standard PN diodes.
IRL5602L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1460 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRL5602L FAQ
1.How can I place an order for IRL5602L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL5602L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL5602L reliable?
The price and inventory of IRL5602L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL5602L is usually 5 days.
3.What payment methods are accepted for IRL5602L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL5602L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL5602L?
IRL5602L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL5602L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL5602L?
For technical support, including IRL5602L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL5602L requirements.
6.How does Aetrix verify that IRL5602L is sourced from the original manufacturer or authorized distributors?
All IRL5602L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL5602L meets industry standards.
7.What is the process for return or replacement of IRL5602L?
All IRL5602L units undergo pre-shipment inspection (PSI). If there is an issue with IRL5602L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL5602L part is unused and in its original packaging.
Return procedure for IRL5602L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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