Infineon Technologies IRL5602S

Overview

IRL5602S from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, -24 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature. It is designed for high-efficiency DC-DC conversion, load switching, and reverse polarity protection in industrial power supplies and motor control circuits.

For engineers reviewing the IRL5602S datasheet, IRL5602S pinout, IRL5602S application, or IRL5602S equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), low RDS(on) at -4.5 V, fully avalanche-rated ruggedness (EAS = 290 mJ), and surface-mount thermal performance (RθJC = 2.0 °C/W).

Technical Context

This P-channel MOSFET operates with negative gate-to-source voltage control and features an integrated body diode optimized for fast recovery (trr = 58–88 ns, Qrr = 54–81 nC). Its dynamic dv/dt rating (-0.81 V/ns) and unclamped inductive switching capability support robust operation in hard-switched topologies.

The device uses fifth-generation HEXFET processing to minimize on-resistance per die area while maintaining high pulsed current handling (IDM = -96 A) and linear derating (0.5 W/°C above 25°C case temperature). Thermal design is enabled by its D2Pak package's low RθJC and high power dissipation (PD = 75 W at TC = 25°C).

Key Specifications

Pinout & Package

The IRL5602S is housed in a surface-mount D2Pak (TO-263AB) package with exposed drain tab for enhanced thermal conduction and mechanical stability. The package accommodates large-die HEX-4 silicon and delivers the lowest RDS(on) among standard SMT power packages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9530NPbF and SI2305DS-T1-E3, the IRL5602S uniquely balances logic-level drivability, high current capability (-24 A), and surface-mount thermal performance in a single D2Pak device-making it optimal for modern industrial power management where efficiency, density, and ruggedness intersect.

Availability

IRL5602S is available at Aetrix Electronics and suitable for industrial DC-DC load switching, reverse polarity protection, and motor driver high-side switching requiring stable component supply across production lifecycles.

Supply support for IRL5602S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET innovation, specializing in high-efficiency silicon-based power semiconductors for industrial, automotive, and computing applications.

The HEXFET® product line-including the IRL5602S-was engineered specifically for high-current, low-voltage switching applications demanding minimal conduction loss, fast switching, and rugged avalanche performance in surface-mount form factors.

FAQ

What is the maximum safe operating voltage for the IRL5602S?

The IRL5602S has a guaranteed drain-to-source breakdown voltage V(BR)DSS of -20 V at VGS = 0 V and ID = -250 µA. Operation beyond this rating risks irreversible avalanche conduction and device failure. Derating is recommended for reliability in transient-heavy environments.

Can the IRL5602S be driven directly from a 3.3 V microcontroller GPIO?

Yes-the IRL5602S is a logic-level P-channel MOSFET with VGS(th) ranging from -0.7 V to -1.0 V. A 3.3 V GPIO pulling the gate to 3.3 V (while source is at, e.g., 12 V) yields VGS ≈ -8.7 V, well within the -8 V absolute maximum and sufficient for full enhancement.

Does the IRL5602S require a heatsink in typical surface-mount applications?

At ≤2 A continuous current and ambient temperatures ≤50°C, the D2Pak package's RθJA ≈ 40 °C/W typically allows operation without an external heatsink. For >5 A or elevated ambient, PCB copper area and thermal vias are essential; RθJC = 2.0 °C/W supports heatsink attachment to the exposed drain tab.

How does the body diode performance compare to discrete Schottky diodes?

The IRL5602S body diode has VSD = -1.4 V at IS = -12 A and TJ = 25°C, with trr = 58–88 ns. While forward voltage is higher than Schottky diodes, its integration eliminates layout complexity and parasitic inductance-ideal for compact, cost-sensitive synchronous rectification where moderate efficiency trade-offs are acceptable.