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Infineon Technologies IRL5602STRL

Part No.:
IRL5602STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRL5602STRL.pdf
Description:
MOSFET P-CH 20V 24A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,144

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Product details

Overview

IRL5602STRL from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, with -24 A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, 175°C maximum junction temperature, and fast switching for high-efficiency DC-DC conversion and load switching.

For engineers reviewing the IRL5602STRL datasheet, IRL5602STRL pinout, IRL5602STRL application, or IRL5602STRL equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), low RDS(on) at -4.5 V, rugged unclamped inductive switching capability (EAS = 290 mJ), and thermal performance (RθJC = 2.0 °C/W) in surface-mount high-power designs.

Technical Context

This P-channel MOSFET operates as a high-side load switch or synchronous rectifier in buck converters and hot-swap circuits. Its negative threshold voltage enables direct interface with 3.3 V/5 V logic controllers, while its low gate charge (Qg = 44 nC) and fast switching (tr = 73 ns, tf = 84 ns) support high-frequency operation up to several hundred kHz.

The device integrates a robust body diode with reverse recovery time trr = 58–88 ns and Qrr = 54–81 nC at IF = -12 A, supporting bidirectional current handling in bridge configurations. Its SOA curve is defined by RDS(on)-limited conduction and avalanche-limited pulse operation, validated per JEDEC JESD24-1.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS-20 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12 V automotive and industrial bus applications.
RDS(on)0.042 Ω @ VGS = -4.5 V, ID = -12 A - Enables <1 W conduction loss at 24 A peak, critical for thermally constrained PCB layouts.
ID (TC = 25°C)-24 A - Continuous drain current rating under heatsink-cooled conditions; supports high-current load switching without forced air.
EAS290 mJ - Single-pulse avalanche energy at TJ = 25°C; ensures reliability during inductive turn-off transients in motor drives.
Qg44 nC - Total gate charge determines driver power requirement and switching loss; compatible with standard logic-level gate drivers.
trr58–88 ns - Body diode reverse recovery time; limits cross-conduction losses in synchronous rectification topologies.
RθJC2.0 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for 75 W PD dissipation in D2Pak footprint.

Pinout & Package

D2Pak (TO-263AB) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and thermal management.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives logic-level gate drive; threshold voltage -0.7 to -1.0 V allows direct interface with 3.3 V microcontrollers.
2 (Drain)High-side power terminalExposed metal tab electrically and thermally connected to drain; must be soldered to large copper pour or heatsink.
3 (Source)Reference nodeConnects to system ground or positive rail in high-side switch configuration; carries full load current.

Key Features

FeatureDesign Value
P-channel logic-level operationVGS(th) = -0.7 to -1.0 V enables direct drive from 3.3 V/5 V GPIO without level-shifting circuitry.
Fully avalanche-ratedRated for 290 mJ single-pulse and 7.5 mJ repetitive avalanche energy, eliminating need for external snubbers in inductive loads.
Low RDS(on) at -4.5 V0.042 Ω ensures <1.2 W conduction loss at -24 A, reducing thermal stress in compact power modules.
175°C max junction temperatureSupports operation in under-hood automotive and industrial environments without derating at elevated ambient temperatures.
Fast switching with low Qg44 nC total gate charge and 73 ns rise time enable >500 kHz PWM operation with minimal driver overhead.

Applications

Automotive Load SwitchIndustrial DC-DC Converter

Use Scenario: High-side power control for engine control unit (ECU) peripherals such as fuel injectors and solenoids in 12 V systems.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with active-low enable; handles inrush and short-circuit protection.

Use Value: Low RDS(on) minimizes voltage drop across switch during cranking (6.5–9 V battery), ensuring stable actuator operation.

Use Scenario: Synchronous rectifier in isolated 48 V to 12 V step-down converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 0.042 Ω RDS(on) reduces conduction loss by >40% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at 20 A output.

Hot-Swap ControllerServer VRM High-Side Switch

Use Scenario: Inrush current limiting and fault isolation for pluggable 24 V backplane modules in telecom equipment.

IC Role / Device Role / Timing Role: High-side MOSFET controlled by dedicated hot-swap IC (e.g., LTC4215); monitors current via sense resistor.

Use Value: Avalanche rating absorbs energy from cable-disconnect transients, preventing latch-up during live insertion/removal.

Use Scenario: High-side switch in multiphase CPU voltage regulator module (VRM) for data center servers.

IC Role / Device Role / Timing Role: Logic-level P-MOSFET in bootstrap-gated high-side position; synchronized with PWM controller.

Use Value: Fast trr (58 ns) and low Qgd (19 nC) minimize shoot-through risk and gate drive power in 600 kHz VRM designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR7843PbFV(BR)DSS = -30 V, RDS(on) = 0.027 Ω @ -4.5 V, Qg = 32 nCHigher voltage rating suits 24 V systems; lower RDS(on) improves efficiency but increases gate drive demand.Select when higher blocking voltage or lower conduction loss is required, accepting slightly larger die size and cost premium.
SI7157DP-T1-GE3V(BR)DSS = -20 V, RDS(on) = 0.045 Ω @ -4.5 V, Qg = 36 nC, SO-8 packageSO-8 footprint limits thermal performance (RθJA ≈ 62 °C/W); unsuitable for >5 A continuous operation without heatsink.Choose only for space-constrained low-power applications where D2Pak mounting is impractical.

Compared with IRL5602STRL, the IRLR7843PbF offers superior conduction efficiency in 24 V systems but requires more gate drive current, while the SI7157DP-T1-GE3 trades thermal capability for board area-making IRL5602STRL optimal for 12 V, medium-power, thermally demanding designs.

Availability

IRL5602STRL is available at Aetrix Electronics and suitable for automotive load switching, industrial DC-DC conversion, and server VRM high-side switching requiring stable component supply and long-term production continuity.

Supply support for IRL5602STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.

The IRL5602STRL belongs to the fifth-generation HEXFET® logic-level P-channel MOSFET product line, engineered specifically for high-current, low-voltage switching in thermally constrained surface-mount applications where gate drive simplicity and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for IRL5602STRL at 100°C case temperature?

The maximum continuous drain current is -17 A at TC = 100°C and VGS = -4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and must be applied when heatsinking is insufficient to maintain TC ≤ 25°C under full load.

Can IRL5602STRL be used in synchronous rectification without external gate driving circuitry?

No-IRL5602STRL requires active gate control. Its gate threshold is -0.7 to -1.0 V, but it lacks integrated gate driver or self-driven capability. For synchronous rectification, it must be paired with a dedicated gate driver IC or transformer-coupled timing circuit to ensure proper turn-on/turn-off sequencing relative to the primary switch.

Is the body diode of IRL5602STRL suitable for freewheeling in buck converters?

Yes-the body diode has a forward voltage of -1.4 V at IS = -12 A and TJ = 25°C, with trr = 58–88 ns and Qrr = 54–81 nC. These parameters support freewheeling in low-to-moderate frequency buck converters (<300 kHz), though external Schottky diodes may be preferred for ultra-high efficiency at higher frequencies due to lower VSD and Qrr.

Does IRL5602STRL meet RoHS and lead-free soldering requirements?

Yes-IRL5602STRL is manufactured in compliance with RoHS Directive 2011/65/EU and supports lead-free reflow soldering up to 300°C for 10 seconds at 1.6 mm from case, as confirmed in the Absolute Maximum Ratings section. The D2Pak package uses matte tin-plated leads and Pb-free mold compound.

IRL5602STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
42mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1460 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
75W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRL5602STRL FAQ

1.How can I place an order for IRL5602STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL5602STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL5602STRL reliable?

The price and inventory of IRL5602STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL5602STRL is usually 5 days.

3.What payment methods are accepted for IRL5602STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL5602STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL5602STRL?

IRL5602STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL5602STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL5602STRL?

For technical support, including IRL5602STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL5602STRL requirements.

6.How does Aetrix verify that IRL5602STRL is sourced from the original manufacturer or authorized distributors?

All IRL5602STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL5602STRL meets industry standards.

7.What is the process for return or replacement of IRL5602STRL?

All IRL5602STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRL5602STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL5602STRL part is unused and in its original packaging.

Return procedure for IRL5602STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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