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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL5602STRLPBF

Name: IRL5602STRLPBF
Brand: Infineon Technologies
SKU: IRL5602STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL5602STRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL5602STRLPBF.pdf

Description:: MOSFET P-CH 20V 24A D2PAK

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Product details

Overview

IRL5602STRLPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, and fully avalanche-rated to 290 mJ. It delivers fast switching (tr = 73 ns, tf = 84 ns), low gate charge (Qg = 44 nC), and operates from -55 °C to +175 °C junction temperature - deployed in high-efficiency DC-DC load switches and hot-swap circuits.

For engineers reviewing the IRL5602STRLPBF datasheet, IRL5602STRLPBF pinout, IRL5602STRLPBF application, or IRL5602STRLPBF equivalent, key selection criteria include verified -20 V breakdown voltage, guaranteed 0.042 Ω on-resistance at -4.5 V gate drive, D2PAK thermal performance (RθJC = 2.0 °C/W), avalanche energy rating (290 mJ), and body diode reverse recovery time (58–88 ns).

Technical Context

This device uses fifth-generation HEXFET process technology to achieve ultra-low RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its P-channel topology enables high-side switching without level-shifting circuitry, and its optimized gate charge profile (Qgs = 8.7 nC, Qgd = 19 nC) supports efficient PWM control at frequencies up to several hundred kHz.

The integrated body diode exhibits VSD = -1.4 V at IS = -12 A and TJ = 25 °C, with trr = 58 ns (typ.) and Qrr = 54 nC (typ.), enabling synchronous rectification in buck converters and controlled turn-off in OR-ing applications. Thermal design leverages the D2PAK's low RθJC (2.0 °C/W) and 75 W PD rating at TC = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-20 V - Ensures reliable blocking in 12 V and 15 V rail systems with margin against transients.
RDS(on)	0.042 Ω @ VGS = -4.5 V, ID = -12 A - Enables <1 W conduction loss at 12 A, critical for thermally constrained PCBs.
ID (TC = 25°C)	-24 A - Supports peak load currents in industrial power supplies and motor drivers.
EAS	290 mJ - Guarantees single-pulse unclamped inductive switching survival without external snubbers.
Qg / Qgs / Qgd	44 / 8.7 / 19 nC - Low Miller charge reduces susceptibility to dv/dt-induced turn-on; enables clean gate drive with 6 Ω RG.
tr / tf	73 / 84 ns - Supports >500 kHz switching in synchronous buck topologies with minimal overlap loss.
trr / Qrr	58 ns / 54 nC (typ.) - Limits reverse recovery losses during high-frequency freewheeling in DC-DC converters.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal dissipation; 3-pin configuration (Drain, Source, Gate); footprint compatible with IPC-7351B SO-263-3 standard; requires thermal pad soldering to inner copper layers for optimal RθJA performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main current path output terminal	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal management and EMI shielding.
2 (Source)	Reference node for gate drive and current return	Low-inductance connection point for gate driver return and sense resistor placement; defines VGS reference.
3 (Gate)	Control input for channel modulation	High-impedance node requiring low-impedance gate driver (<6 Ω series resistance) to minimize ringing and ensure fast, controlled turn-on/off.

Key Features

Feature	Design Value
P-channel logic-level drive	Guaranteed turn-on with -4.5 V gate drive, eliminating need for charge pumps or level shifters in 5 V/3.3 V control systems.
Fully avalanche-rated	290 mJ single-pulse energy rating validated per JEDEC JESD24-11, enabling robust operation in inductive load switching.
Low RDS(on) × Qg figure of merit	1.85 Ω·nC - balances conduction and switching losses for high-efficiency mid-power SMPS designs.
Lead-free and RoHS-compliant	Meets IPC/JEDEC J-STD-020D reflow profile; qualified for 300 °C soldering (10 s, 1.6 mm from case).

Applications

Hot-Swap Controller

OR-ing Diode Replacement

Use Scenario: Insertion of powered modules into backplane or server chassis without causing bus voltage droop or damaging upstream supplies.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling power path entry; gate driven by dedicated hot-swap controller (e.g., LTC4215).

Use Value: Replaces Schottky diodes with <0.5 V forward drop, reducing power loss by >70% and enabling bidirectional current sensing via RDS(on) monitoring.

Use Scenario: Redundant 12 V power supply inputs in telecom line cards where automatic failover between supplies is required.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing passive diode; body diode conducts initial current until gate is pulled low to enable low-loss conduction.

Use Value: Achieves <0.05 V effective forward drop at 12 A, cutting heat generation by >90% versus 40 mΩ Schottky diodes and enabling compact thermal design.

Load Switch for Industrial PLC I/O

Synchronous Rectifier in Isolated DC-DC

Use Scenario: Controlled power delivery to field actuators (solenoids, relays) in programmable logic controllers with overcurrent and thermal fault reporting.

IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated current sensing via RDS(on) and thermal shutdown feedback.

Use Value: Enables precise current limiting (±10% accuracy at 10 A) and fast fault response (<10 µs) due to low gate charge and high dV/dt immunity (-0.81 V/ns).

Use Scenario: Secondary-side rectification in isolated 48 V–12 V flyback or forward converters used in datacom power supplies.

IC Role / Device Role / Timing Role: Synchronously commutated rectifier driven by transformer-coupled gate signal; body diode provides initial conduction before gate activation.

Use Value: Delivers >95% efficiency at 12 A output with trr < 88 ns and Qrr < 81 nC, minimizing dead-time losses and improving light-load regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7416PbF	RDS(on) = 0.035 Ω @ -4.5 V but rated only to -15 V V(BR)DSS; smaller SO-8 package limits power handling (PD = 2.5 W).	Better suited for low-power logic-level switching below 5 A; unsuitable for >12 V bus or >10 W dissipation.	Select when board space is constrained and voltage stress remains <12 V; avoid for 20 V transient environments.
Si7157DP-T1-GE3	RDS(on) = 0.038 Ω @ -4.5 V, V(BR)DSS = -20 V, but Qg = 52 nC (vs. 44 nC); DFN5x6 package offers lower RθJA but no exposed drain tab.	Higher gate charge increases driver loss; thermal path relies on PCB copper rather than direct tab mounting.	Prefer for high-density layouts needing improved RθJA via 2-layer thermal vias; verify gate driver slew rate compatibility.

Compared with IRL5602STRLPBF, IRF7416PbF trades voltage margin and thermal capacity for compactness, while Si7157DP-T1-GE3 improves package thermal resistance but increases switching loss - both require gate drive and layout adjustments to match the D2PAK's balance of ruggedness, efficiency, and ease of thermal management.

Availability

IRL5602STRLPBF is available at Aetrix Electronics and suitable for hot-swap controllers, OR-ing diode replacements, industrial PLC load switches, and synchronous rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL5602STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-reliability, high-current switching in industrial power conversion, motor control, and redundant power architectures.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL5602STRLPBF supports -17 A continuous drain current at TC = 100 °C and VGS = -4.5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit under steady-state conditions with adequate heatsinking.

Is this MOSFET suitable for use in a synchronous buck converter's high-side switch position?

No - the IRL5602STRLPBF is a P-channel device and is not intended for high-side synchronous buck operation, which requires N-channel FETs with bootstrap or isolated gate drive. It is appropriate for low-side synchronous rectification or high-side switching in non-synchronous topologies like OR-ing or hot-swap, where logic-level P-channel drive simplifies control.

Does the device have a specified gate threshold voltage range?

Yes - the gate threshold voltage VGS(th) is specified as -0.7 V (min) to -1.0 V (max) at VDS = VGS and ID = -250 µA. This tight range ensures consistent turn-on behavior across temperature and manufacturing lots, supporting reliable logic-level operation down to -2.5 V gate drive in industrial environments.

Can the body diode be used for continuous freewheeling in a flyback converter?

Yes - the integrated body diode is rated for continuous source current IS = -12 A and pulsed source current ISM = -48 A, with VSD = -1.4 V at IS = -12 A and TJ = 25 °C. However, for high-frequency flyback operation, synchronous rectification using external gate control is preferred to minimize conduction loss and reverse recovery energy.

IRL5602STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL5602STRLPBF FAQ

1.How can I place an order for IRL5602STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL5602STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL5602STRLPBF reliable?

The price and inventory of IRL5602STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL5602STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL5602STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL5602STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL5602STRLPBF?

IRL5602STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL5602STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL5602STRLPBF?

For technical support, including IRL5602STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL5602STRLPBF requirements.

6.How does Aetrix verify that IRL5602STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL5602STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL5602STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL5602STRLPBF?

All IRL5602STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL5602STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL5602STRLPBF part is unused and in its original packaging.

Return procedure for IRL5602STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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