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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL5602STRR

Name: IRL5602STRR
Brand: Infineon Technologies
SKU: IRL5602STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL5602STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL5602STRR.pdf

Description:: MOSFET P-CH 20V 24A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,562

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Product details

Overview

IRL5602STRR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263AB) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, with -24 A continuous drain current at TC = 25°C. It is designed for high-efficiency DC-DC conversion, load switching, and reverse polarity protection in industrial power supplies and automotive body control modules.

For engineers reviewing the IRL5602STRR datasheet, IRL5602STRR pinout, IRL5602STRR application, or IRL5602STRR equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), fully avalanche-rated ruggedness (EAS = 290 mJ), low thermal resistance (RθJC = 2.0 °C/W), and surface-mount power capability up to 75 W PD.

Technical Context

This P-channel MOSFET operates with negative gate-to-source voltage control and features fast switching (tr = 73 ns, tf = 84 ns) enabled by low gate charge (Qg = 44 nC, Qgd = 19 nC). Its intrinsic body diode supports synchronous rectification and unclamped inductive switching with validated dv/dt immunity (-0.81 V/ns) and reverse recovery performance (trr = 58–88 ns, Qrr = 54–81 nC).

The device is optimized for operation up to TJ = +175°C and includes robust thermal design with RθJA = 40 °C/W on FR-4 PCB. Its D2Pak package provides low internal connection resistance and supports high-current routing via exposed drain pad, enabling stable conduction under pulsed loads (IDM = -96 A) and repetitive avalanche stress (EAR = 7.5 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	-20 V - Maximum blocking voltage before avalanche onset; enables use in 12 V automotive and 15 V industrial bus systems.
RDS(on)	0.042 Ω @ VGS = -4.5 V, ID = -12 A - Low on-resistance minimizes conduction loss in high-current load switches.
ID (TC = 25°C)	-24 A - Continuous drain current rating at case temperature 25°C; defines steady-state power delivery capability.
EAS	290 mJ - Single-pulse avalanche energy; confirms ruggedness against inductive turn-off transients without external snubbers.
Qg / Qgd	44 nC / 19 nC - Total and Miller gate charge values; determine driver strength requirements and switching speed trade-offs.
trr / Qrr	58–88 ns / 54–81 nC - Body diode reverse recovery time and charge; critical for synchronous buck or OR-ing circuit efficiency.
RθJC	2.0 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for high-power dissipation in compact layouts.

Pinout & Package

D2Pak (TO-263AB) surface-mount power package with exposed drain pad for thermal and electrical conduction; 3-pin configuration with GATE (Pin 1), DRAIN (Pin 2), SOURCE (Pin 3); lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives logic-level negative voltage (-4.5 V typical) to fully enhance channel; low input capacitance (Ciss = 1460 pF) eases driving.
2 - Drain	High-side power terminal	Connected to input supply rail; electrically and thermally tied to exposed copper pad for low-inductance, high-current path and heatsinking.
3 - Source	Reference/return node	Serves as common return for load current and gate drive reference; forms cathode of integral body diode for freewheeling paths.

Key Features

Feature	Design Value
Fully avalanche rated	Validated single-pulse EAS = 290 mJ and repetitive EAR = 7.5 mJ - eliminates need for external clamping in inductive load switching.
Logic-level gate drive	VGS(th) = -0.7 to -1.0 V - compatible with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Low RDS(on) at low VGS	0.062 Ω @ VGS = -2.7 V, ID = -10 A - ensures efficient operation even with marginal gate drive voltage margins.
High-temperature operation	TJ range = -55°C to +175°C - supports deployment in under-hood automotive and industrial environments without derating.
Fast body diode recovery	trr = 58 ns (typ), Qrr = 54 nC (typ) - reduces switching losses and EMI in synchronous rectifier and OR-ing applications.

Applications

Automotive Load Switch

Industrial DC-DC Converter

Use Scenario: High-side power switch for engine control unit (ECU) peripherals such as fuel injectors and solenoids.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO.

Use Value: Enables precise, low-loss power gating with integrated avalanche ruggedness eliminating external TVS components.

Use Scenario: Synchronous rectifier in isolated 12 V → 3.3 V flyback converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >92% efficiency at full load due to 0.042 Ω RDS(on) and fast trr/Qrr characteristics minimizing dead-time losses.

Reverse Polarity Protection

Hot-Swap Controller

Use Scenario: Input protection circuit for 24 V industrial sensors exposed to accidental battery reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive rail; gate referenced to input to block reverse current.

Use Value: Provides near-zero forward voltage drop (<0.5 V at 10 A) versus 0.7 V Schottky, reducing heat generation and improving system reliability.

Use Scenario: Inrush current limiter in modular server backplane power distribution units.

IC Role / Device Role / Timing Role: High-side switch controlled by dedicated hot-swap IC to ramp gate voltage and limit dI/dt during insertion.

Use Value: Supports controlled 20 A hot-plug events with minimal voltage droop thanks to low RDS(on) and high IDM (-96 A pulse rating).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530NPbF	V(BR)DSS = -100 V, RDS(on) = 0.3 Ω @ VGS = -10 V, slower switching (Qg = 75 nC)	Higher voltage rating but higher on-resistance and gate charge - suited for lower-frequency, higher-voltage linear regulation.	Select when >60 V blocking is required and gate drive is ≥10 V; avoid for 3.3 V logic-level systems.
SI2305DS-T1-GE3	V(BR)DSS = -20 V, RDS(on) = 0.055 Ω @ VGS = -4.5 V, SOT-23 package, PD = 1.25 W	Same voltage rating and logic compatibility but limited to ≤4 A continuous current and no avalanche rating.	Choose only for space-constrained, low-power (<2 W) applications where ruggedness and thermal headroom are not critical.

Compared with IRF9530NPbF and SI2305DS-T1-GE3, the IRL5602STRR uniquely balances logic-level drive, high-current capability (-24 A), and certified avalanche ruggedness in a thermally optimized D2Pak - making it the preferred choice for automotive-grade load switching and industrial hot-swap designs requiring both efficiency and reliability.

Availability

IRL5602STRR is available at Aetrix Electronics and suitable for automotive load switching, industrial DC-DC converters, and reverse polarity protection circuits requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRL5602STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control solutions.

The IRL5602STRR belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power switching in harsh-environment applications including automotive body electronics and industrial power supplies.

FAQ

What is the maximum junction temperature for continuous operation?

The IRL5602STRR has a specified operating junction temperature range of -55°C to +175°C. For continuous operation, thermal design must ensure TJ does not exceed +175°C under worst-case ambient and power dissipation conditions. Derating begins at TC = 25°C with a linear factor of 0.5 W/°C beyond that point.

Is the IRL5602STRR suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage range of -0.7 V to -1.0 V and guaranteed RDS(on) of 0.075 Ω at VGS = -2.5 V, the IRL5602STRR fully enhances using standard 3.3 V logic outputs when referenced appropriately. No level shifter is required for direct GPIO control in low-side or high-side configurations.

Does this MOSFET include an integrated body diode, and what are its key parameters?

Yes, it integrates a p-n junction body diode between source and drain. Key parameters include VSD = -1.4 V at IS = -12 A and TJ = 25°C, trr = 58–88 ns, and Qrr = 54–81 nC. These values are measured under standardized conditions (IF = -12 A, di/dt = -100 A/µs) and support use in freewheeling and synchronous rectification topologies.

How does the D2Pak package affect PCB layout and thermal performance?

The D2Pak (TO-263AB) requires a minimum recommended footprint per AN-994, with an exposed drain pad soldered directly to a large copper pour for thermal conduction. This achieves RθJA = 40 °C/W on FR-4 and RθJC = 2.0 °C/W to heatsink, enabling up to 75 W power dissipation - significantly higher than SO-8 or DPAK alternatives.

IRL5602STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL5602STRR FAQ

1.How can I place an order for IRL5602STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL5602STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL5602STRR reliable?

The price and inventory of IRL5602STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL5602STRR is usually 5 days.

3.What payment methods are accepted for IRL5602STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL5602STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL5602STRR?

IRL5602STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL5602STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL5602STRR?

For technical support, including IRL5602STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL5602STRR requirements.

6.How does Aetrix verify that IRL5602STRR is sourced from the original manufacturer or authorized distributors?

All IRL5602STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL5602STRR meets industry standards.

7.What is the process for return or replacement of IRL5602STRR?

All IRL5602STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRL5602STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL5602STRR part is unused and in its original packaging.

Return procedure for IRL5602STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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