Infineon Technologies IRL5602STRRPBF

Overview

IRL5602STRRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, and fully avalanche-rated to 290 mJ. It delivers fast switching (tr = 73 ns, tf = 84 ns), low gate charge (Qg = 44 nC), and operates from -55 °C to +175 °C junction temperature - deployed in high-efficiency DC-DC load switches and hot-swap circuits.

For engineers reviewing the IRL5602STRRPBF datasheet, IRL5602STRRPBF pinout, IRL5602STRRPBF application, or IRL5602STRRPBF equivalent, key selection criteria include its -4.5 V logic-level gate drive compatibility, rugged single-pulse avalanche capability, thermal resistance (RθJC = 2.0 °C/W), and surface-mount power handling up to 75 W at TC = 25 °C.

Technical Context

This P-channel MOSFET uses fifth-generation HEXFET process technology to achieve ultra-low on-resistance per die area while maintaining robust dv/dt immunity (175 V/ns rated) and fast body diode recovery (trr = 58–88 ns). Its gate threshold voltage range (-0.7 to -1.0 V) ensures reliable turn-on with standard logic-level controllers.

The device integrates a co-packaged, intrinsic p-n junction body diode with VSD = -1.4 V at IS = -12 A and TJ = 25 °C, supporting synchronous rectification and reverse current blocking in bidirectional power paths. Thermal design is enabled by validated junction-to-case resistance of 2.0 °C/W and linear derating factor of 0.5 W/°C above 25 °C.

Key Specifications

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical performance. Standard 3-pin configuration: Pin 1 = Source, Pin 2 = Drain (tab), Pin 3 = Gate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Compared with IRL5602STRRPBF, IRF7416PbF offers lower gate charge but reduced avalanche robustness and thermal capacity, while SI4435DY-T1-E3 delivers lower RDS(on) in a smaller package but lacks documented avalanche endurance - making IRL5602STRRPBF optimal for industrial-grade hot-swap and redundant supply designs demanding proven ruggedness.

Availability

IRL5602STRRPBF is available at Aetrix Electronics and suitable for hot-swap controllers, high-side load switches, and OR-ing diode replacements requiring stable component supply, long lifecycle support, and traceable sourcing for industrial automation, telecom infrastructure, and embedded computing platforms.

Supply support for IRL5602STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with strong heritage in power discrete innovation.

The IRL5602STRRPBF belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-reliability, logic-level-driven power switching in industrial and communications equipment where ruggedness, thermal stability, and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL5602STRRPBF supports -17 A continuous drain current at TC = 100 °C with VGS = -4.5 V. This derated value reflects thermal limits imposed by junction-to-case resistance (2.0 °C/W) and ambient thermal environment - design must ensure case temperature remains ≤100 °C under full load using appropriate copper area or heatsinking.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is required to control dV/dt and prevent oscillation during switching. For typical 3.3 V or 5 V logic drivers, a 10 Ω to 22 Ω series resistor is recommended. Lower values (≤10 Ω) improve switching speed but increase EMI risk; higher values (>47 Ω) suppress ringing but extend td(on)/td(off), raising switching losses - verify with actual gate driver output impedance and layout parasitics.

Can the IRL5602STRRPBF be used in parallel configurations?

Yes - its negative temperature coefficient of RDS(on) enables inherent current sharing when paralleled. However, layout symmetry (matched trace length, width, and thermal coupling) is essential. Use separate gate resistors per device and ensure identical source inductance; avoid shared source routing to prevent oscillation. Derate total current by 15% for reliability in parallel operation.

Is the body diode suitable for reverse recovery in synchronous rectification?

The intrinsic body diode has trr = 58–88 ns and Qrr = 54–81 nC at IF = -12 A, making it usable in low-frequency (<100 kHz) synchronous rectification. However, for high-frequency DC-DC converters, external Schottky or GaN FETs are preferred due to lower Qrr and faster recovery - the IRL5602STRRPBF body diode is best leveraged for fault protection and OR-ing, not primary rectification.